- TIP50 is an NPN POWER transistor device
- Collector to emitter voltage is 400V
- Collector to base voltage is 500V
- Emitter to base voltage is 5V
- Collector current is 1A
- Pulsed collector current is 2A
- Base current is 6A
- Power dissipation is 40W
- DC current gain is 30 to 150hFE
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Thermal resistance, junction to case is 125℃/W
- Transition frequency is 10MHz
- Robust device
- Reliable operation
|Pin Number||Pin Name||Description|
|1||Base||The base is the trigger for the transistor|
|2||Collector||Current flows through the collector|
|3||Emitter||Current flows through the emitter|
TIP50 transistor package
TIP50 is a POWER transistor having a TO-220C device package, these devices have multiple applications in power systems.
TO-220C is a POWER package made of epoxy/plastic material, this will give the device more temperature capacity and compactness.
TO-220C is the right option for the TIP50 transistor because most of the applications based on the device are power-switching.
TIP50 transistor electrical specification description & application notes
Here we explain the electrical specifications of the TIP50 POWER transistor, this will help us to know more about the transistor for use in applications.
The voltage specifications of the TIP50 transistor are collector to base voltage is 500V, a collector-to-emitter voltage is 400V and emitter to base voltage is 5V, this is the terminal voltage specs.
The collector-to-emitter saturation voltage of is TIP50 transistor is 1V, and the saturation specs are the switching voltage of the device.
Overall voltage specifications of the TIP50 transistor show that it is a power device having higher voltage specs.
The collector current specs of the TIP50 transistor are 1A, which is the maximum load capacity of the device.
The pulsed collector current specs of the TIP50 transistor is 2A, it is the value at a specific condition.
The base current value of the TIP50 transistor is 0.6A, it is the current value at the switching of the device.
The power dissipation of the TIP50 transistor is 40W, the dissipation energy is mainly dependent on the device package.
Current gain specs
The current gain value of the TIP50 transistor is 30 to 150hFE, it is the value depended on the amplification ability of the device.
Junction temperature/storage temperature
The junction temperature to storage temperature of -65 to +150℃.
The thermal resistance, junction to case of the TIP50 transistor is 3.125℃/W
The transition frequency value of the TIP50 transistor is 10MHz, it is the overall frequency response of the device.
If you need the datasheet in pdf please click this link
The TIP50 transistor has equivalent devices such as 2SC2898, 2SC3310, 2SC3795, MJE16004, NTE198, and MJE8503, each of these transistors have the same set of electrical specifications.
We can easily replace them at the circuit for power applications, before the replacement process we need to check and verify the specs such as voltage and pinout details.
TIP50 vs 2SC3310 vs MJE16002
Characteristics TIP50 TIP3310 MJE16002
Collector to base voltage (VCB) 500V 500V 850V
Collector to emitter voltage (VCE) 400V 400V 450V
Emitter to base voltage (VEB) 5V 7V 6V
Collector to emitter saturation voltage (VCE (SAT)) 1V 1V 1V
Collector current (IC) 1A 5A 5A
Pulsed collector current 2A - 10A
Power dissipation 40W 30W 80W
Thermal resistance, junction to case 3.125℃/W - 1.56℃/W
Junction temperature (TJ) -65 to +150°C -55 to +150°C -65 to +150°C
Transition frequency (FT) 10MHz - -
Gain (hFE) 30 to 150hFE 12hFE -
Package TO-220C TO-220F TO-220AB
TIP50 transistor applications
- Output amplifier applications
- Power supply driver applications
- Switching applications
- High-voltage circuit applications
TIP50 transistor characteristics curves
The figure shows the DC current gain graphical characteristics of the TIP50 transistor, the graph plots with dc current gain vs collector current.
At a constant collector-to-emitter voltage, the gain value of the transistor increases and becomes constant, and decreases at the end.
The figure shows the safe operating area of the TIP50 transistor, and the graph plots with collector current vs collector to emitter voltage. Each of the limits of the transistor is been marked in the graph.
The figure shows the regulator circuit based on the TIP50 transistor, it is a circuit consisting of multiple passive and active components with regulating elements.
The connection of the regulator is shunt or parallel, so this is why the same sets of components are been arranged at both sides of the circuit.
The circuit is used to maintain a desirable voltage at the output, this is a high-voltage circuit, and so ssa high amount of voltage is handled at the circuit.