TIP36C transistor
TIP36C specification
- TIP36C is a silicon high PNP POWER transistor device
- Collector to emitter voltage is -100V
- Collector to base voltage is –100V
- Emitter to base voltage is –5V
- Collector current is -25A
- Pulsed collector current is -50A
- Base current is –5A
- Power dissipation is 125W
- DC current gain is 10 to 50hFE
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -1.8 to 4V
- Transition frequency 3MHz
- Low collector to emitter saturation voltage
TIP36C transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
TIP36C transistor package
The TIP36C is a high-power transistor that has two device packages such as TO-247 and TO-218.
TO-247 is a through-hole package covered with epoxy/plastic material which had a higher temperature capacity and the back portion of the package had a metal coating, that will support the transfer of heat towards the heat sink.
TO-218 is a through-hole bulkier package that is made of epoxy/plastic material and is used for higher temperature capacity and the rest of the portion is made of metal which is used to transfer toward the heat sink.
TIP36C transistor electrical specification description
We explain the main electrical specifications of the TIP36C transistor, this description is really helpful for a better understanding of the transistor and it will support the replacement process.
Voltage specs
The voltage specs of the TIP36C transistor are collector to emitter voltage is -100V, collector to base voltage is -100V, and emitter to base voltage is -5V. The terminal voltage specification is higher.
The collector-to-emitter saturation voltage of the TIP36C transistor is -1.8V to -4V, which is the region switching voltage value.
Current specs
The collector current value is 25A at the TIP36C transistor, the current value indicates the maximum load capacity of the device.
The pulsed collector current value of the TIP36C transistor is 50A, these values are mainly dependent on the pulse width of the device.
The base current value of the TIP36C transistor is 5A, it is the triggering current of the device.
Dissipation specs
The power dissipation at the TIP36C transistor is 125W, the dissipation power is the product of the voltage and current values of the transistor.
Current gain specs
The current gain value of the TIP36C transistor is 10 to 50hFE, the gain value of the transistor indicates the amplification ability of the transistor.
Junction temperature/ operating temperature
The junction temperature/operating temperature of -65 to 150℃
Transition frequency
The transition frequency value of the TIP36C transistor is 3MHz.
TIP36C transistor DATASHEET
If you need the datasheet in pdf please click this link
TIP36C transistor equivalent
TIP36B, 2SB686, BD546C, NTE393, TIP36A, and TIP35AG are the equivalent transistors of TIP36C, each of these devices has the same set of electrical specifications.
At the replacement, we need to check the PINOUT details and voltage values of the transistors we opted for as the equivalent.
TIP36C transistor complementary
TIP35C NPN transistor is the complementary pair of the TIP36C PNP transistor device.
TIP36C vs NTE393 vs 2SB686
In the table below, we listed the electrical specifications of TIP36C, NTE393, and 2SB686 transistor devices, the listing comparison is helpful for a better understanding of the device.
| Characteristics | TIP36C | NTE393 | 2SB686 |
|---|---|---|---|
| Collector to base voltage (VCB) | -100V | -100V | -100V |
| Collector to emitter voltage (VCE) | -100V | -100V | -100V |
| Emitter to base voltage (VEB) | -5V | -5V | -5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -1.8V to -4V | -1.8V to -4V | -2.0V |
| Collector current (IC) | -25A | -25A | -6A |
| Pulsed collector current (ICM) | -50A | -40A | - |
| Power dissipation | 125W | 125W | 60W |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -55 to +150°C |
| Thermal resistance, junction to case | 1℃/W | 1℃/W | - |
| Transition frequency (FT) | 3MHz | 3MHZ | 10MHz |
| Gain (hFE) | 10 to 50hFE | 25 to 75hFE | 55 to 160hFE |
| Package | TO-247/TO-218 | TO-3P | TO-3P |
In this comparison table, we listed the electrical specifications of each of these transistors TIP36C, NTE393, and 2SB686.
Each of these transistors has similar voltage values, the TIP36C and NTE393 have the same current specs, and the 2SB686 has low current values.
TIP36C transistor applications
- General-purpose power amplifier
- Switching application
- Motor driver
- Solar charger
- UPS circuit
- Battery charger
- Power banks applications
TIP36C transistor characteristics
The figure shows the DC current gain characteristics of the TIP36C transistor, the graph plots with current gain vs collector current.
At constant collector to emitter voltage, the gain value starts increasing and becomes constant, the gain characteristic plots at three different temperature ranges.
The figure shows the saturation voltage characteristics of the TIP36C transistor, and the graph plots the collector-to-emitter saturation voltage vs collector current.
At a constant gain value, the saturation voltage graph plots at different temperature ranges.
TIP36C amplifier circuit
The figure shows the TDA2030 IC and TIP35C & TIP36C transistor-based amplifier circuit.
The TDA2030 IC performs an amplification process, and both TIP push-pull transistors work at ending of the circuit.
