- TIP32C is an epitaxial silicon PNP POWER transistor device
- Collector to emitter voltage is -100V
- Collector to base voltage is –100V
- Emitter to base voltage is –5V
- Collector current is -3A
- Pulsed collector current is -5A
- Base current is –1A
- Power dissipation is 40W
- DC current gain is 10 to 50hFE
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -1.2V
- Transition frequency 10 to 50MHz
TIP32C transistor Pinout
|The base is the trigger for the transistor
|Current flows through the collector
|Current flows through the emitter
TIP32C transistor package
The TIP32C is a power transistor device, this is why they had TO-220C bulky package.
TO-220C package is made with epoxy/plastic material for higher heat resistance properties and the backside metal portion is for transferring excess heat towards the heat sink.
The TIP32C transistors mostly had applications in medium power devices, so the power dissipation capability of the device will need to be higher.
Marking the case
The marking of this transistor is “TIP32C” on the case
TIP32C transistor electrical specification description
In this section, we try to explain the electrical specifications of the TIP32C transistor. This will help us for a better understanding of this transistor, and also we explain the application description.
The terminal voltage specs of the TIP32C transistor are collector to base voltage and collector to emitter voltage is -100V and emitter to base voltage are -5V, the voltage specs show that they are power transistor mainly used for heavy applications.
The collector to emitter saturation voltage is -1.2V, it is the saturated switching voltage of the transistor, and also it is lower than the base voltage.
The collector current value is -3A, the load capacity of this transistor is higher and the pulsed collector current value will be -5A at this TIP32C transistor.
The base current value is -1A,
The power dissipation at the TIP32C transistor is 40W, the device dissipation mainly depends on the transistor package and overall capacity.
Current gain specs
The current gain value of TIP32C is 10 to 50hFE, the DC current value shows that it is capable of amplifier and driver applications.
The junction temperature of -65 to 150℃, and the TIP32C is a power transistor.
TIP32C transistor DATASHEET
If you need the datasheet in pdf please click this link
TIP32C transistor equivalent
The transistors such as BD582, BD592, TIP32D, NSP582, NSP5195, BD954, ECG292, and TIP62C are the equivalent of TIP32C transistors.
The electrical specifications of these transistors are the same as TIP32C, so we can easily replace them in the circuits.
TIP32C transistor complementary
The TIP32C PNP power transistor had TIP31C NPN power transistor complementary pair, in many applications these transistor pairs are been used.
TIP32C vs TIP32D vs 2SB869
In the table below, we listed the electrical specifications of TIP32C, TIP32D, and 2SB869, this will help us to know more about these transistor devices.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|Collector current (IC)
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +150°C
|-55 to +150°C
|Transition frequency (FT)
|10 to 50hFE
|5 to 25hFE
|45 to 260hFE
From the above electrical characteristics listing, we understand that these three transistors are had almost the same specifications, but each of them are been used for specific applications.
The TIP32C transistor had identical terminal voltage values with the higher current value, this is helpful for the switching applications.
The 2SB869 transistor had higher voltage and current value, this is why they had power handing applications with amplification applications.
TIP32C transistor applications
- High current switching applications
- Medium power switching
- Large signal amplifier
- Speed control of motor
- Half-bridge circuits
- Inverter circuits
- Rectifier circuits
- Darlington pair
- DC motor controller system
TIP32C transistor characteristics
The figure shows the DC current gain characteristics of the TIP32C transistor, the graph is plotted with dc current gain vs collector current.
At a fixed collector to emitter voltage, the current gain value starts from a fixed point and becomes constant with respect to collector current.
In the end, the DC current gain decreases.
The figure shows the saturation voltage characteristics of the TIP32C transistor, the graph is plotted with the base to emitter saturated voltage/emitter to collector saturated voltage with collector current.
At the fixed base current and collector current, the VCE(sat) voltage increases from the lowest value to a higher value and the VBE (sat) voltage will start from a higher value towards.