TIP29C transistor electrical specification
- TIP29C is an NPN BJT POWER transistor device
- Collector to emitter voltage is 100V
- Collector to base voltage is 100V
- Emitter to base voltage is 5V
- Collector current is 1A
- Pulsed collector current is 3A
- Base current is 4A
- Power dissipation is 30W
- DC current gain is 15 to 75hFE
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is7V
- Transition frequency 3MHz
- High DC current gain
- Low saturation voltage
TIP29C transistor Pinout
|The base is the trigger for the transistor
|Current flows through the collector
|Current flows through the emitter
TIP29C transistor package
The TIP29C transistor had a TO-220 device package, it is a bulkier 3pin-based transistor.
The TO-220 package is made with a mixture of epoxy and plastic material, these materials are good at heat resistance and also very compact.
The back portion of the TO-220 transistor is made with metal, as when the heat sink attaches to this portion, the metal portion can easily transfer the heat towards the heat sink.
Marking the case
The marking of this transistor is “TIP29C” on the case
TIP29C transistor electrical specification description
In this section, we try to explain the electrical specifications of the TIP29C transistor and this explanation is really helpful for a better understanding of the transistor.
The terminal voltage specs of the TIP29C transistor are collector to base and collector to emitter voltage is 100V and emitter to base voltage is 5V, the voltage specs suggest that these transistors had applications at high POWER audio amplifiers.
The collector to emitter saturation voltage is 0.7V, the saturation voltage is very much similar to the silicon breakdown value.
The collector current value is 1A, the transistor current value shows the maximum load capacity.
The pulsed collector current value is 3A, it is the current value shown by the transistor at the perfect condition.
The current specs of this TIP29C transistor show that this transistor had many applications in switching and amplifier circuits.
The power dissipation at the TIP29C transistor is 30W, the device dissipation mainly depends on the transistor package and overall capacity.
Current gain specs
The current gain value of TIP29C is 15 to 75hFE, the DC current value shows that it is capable of amplifier and driver applications.
The junction temperature of -65 to 150℃, and the TIP29C is a power transistor.
TIP29C transistor DATASHEET
If you need the datasheet in pdf please click this link
TIP29C transistor equivalent
The transistors such as TIP41C, TIP41F, TIP42E, BD711, MJE5181, NTE291, MJE5180, 2SD772, and 2N6474 are the equivalent of TIP29C transistors.
We can easily use these transistor devices at circuits as the replacement for TIP29C, this is because they all have almost the same electrical specifications.
Before the replacement process, we need to check and verify the PINOUT details of these transistors.
TIP29C transistor complementary
The TIP29C NPN transistor had complementary PNP transistors such as TIP30A and TIP30C.
At many circuits, these complementary pairs are been used.
TIP29C vs TIP41C vs 2N6473
In the table below, we listed the electrical specification comparison of TIP29C, TIP41C, and 2N6473 transistors.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|1.2 to 2.5V
|Collector current (IC)
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +150°C
|-55 to +150°C
|Transition frequency (FT)
|15 to 75hFE
|15 to 150hFE
The voltage specs of all the transistors are the same, the current specs of TIP29C are 1A, TIP41C is 6A and 2N6473 is 4A, this is why TIP41C had many driver applications.
The TIP41C is the most powerful transistor in this list, but the DC current gain value is higher for 2N6473, this means this transistor had many amplifier circuit applications.
TIP29C transistor applications
- Audio amplifier circuits
- Linear switching applications
- Motor driver circuits
TIP29C transistor characteristics
The figure shows the DC current gain characteristics of the TIP29C transistor, the graph is plotted with DC gain vs collector current.
At a fixed collector to emitter voltage, the DC gain value increases from a particular value and becomes constant, then drops to lower values.
The DC gain value will increase with respect to device temperature value,
The figure shows the collector to emitter saturation voltage characteristics of the TIP29C transistor, graph plots with the collector to emitter saturation voltage vs collector current.
The characteristics curves are plots at a fixed gain and temperature values, the saturation voltage had a fixed and increases when the device starts working.