TIP112 transistor
TIP112 transistor electrical specification
- TIP112 is an NPN Darlington POWER transistor device
- Collector to emitter voltage is 100V
- Collector to base voltage is 100V
- Emitter to base voltage is 5V
- Collector current is 2A
- Pulsed collector current is 4A
- Base current is 50mA
- Power dissipation is 50W
- DC current gain is 500 to 1000hFE
- Junction temperature & storage temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Thermal resistance, junction to the case is 5℃/W
- Output capacitance is 100pF
- High DC current gain
- Low saturation voltage
TIP112 Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base terminal is used to trigger the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
TIP112 package
TIP112 transistor is a Darlington NPN transistor device having a TO-220 package, it is a three-terminal package made of epoxy/plastic material, which will make the package more heat resistant and compact.
TO-220 is a bulkier and through-hole package, this is why we can attach a heat sink with it.
TIP112 NPN Darlington transistor
TIP112 is an NPN Darlington transistor, this combination is made by connecting two sets of NPN transistors back to back. These types of transistors have HIGHER gain value due to the connection.
TIP112 transistor electrical specification description & application notes
Here in this section, we explain the important electrical specifications of the TIP112 transistor, this is very important in the replacement process.
Voltage specs
The voltage specs of the TIP112 transistor are a collector-to-emitter voltage is 100V, a collector-to-base voltage is 100V, and an emitter-to-base voltage is 5V, the terminal voltage shows it is a high-voltage device.
The collector-to-emitter saturation voltage is 2.5V, which is the voltage value important for switching the device.
The terminal voltage and saturation voltage values of the TIP112 transistor indicate it had high-power applications.
Current specs
The collector current value of the TIP112 transistor is 2A, it shows the load capacity of the device.
The pulsed collector current value of the TIP112 transistor is 4A, this current is double that of the collector current.
Dissipation specs
The dissipation value of the TIP112 transistor is 50W, it is calculated by taking the product of voltage and current. It is mainly depended on the device package of the TIP112 transistor.
Current gain specs
The current gain of the TIP112 transistor is 500 to 1000, it shows the amplification ability of the device.
Junction temperature/ storage temperature
The junction temperature & storage temperature values are -65 to 150℃.
Output capacitance
The output capacitance value of the TIP112 transistor is 100Pf.
TIP112 DATASHEET
If you need the datasheet in pdf please click this link
TIP112 equivalent
TIP112 transistor has equivalent devices such as 2N6045, 2N6532, 2SD1415, TIP102, TIP122, BDT65B, and BDW42, each of these transistor devices have used as the replacement for the TIP112 transistor.
TIP112 transistors are mainly used for driver and power-related applications, so we need to check specs such as PINOUT details, DC gain value, and the voltage value of the transistor before the replacement process.
TIP112 Complementary transistor
TIP112 NPN Darlington pair transistors have complementary pair TIP117 PNP transistors, and both of them have the same electrical specifications, so we easily use them in circuit applications.
TIP112 vs 2N6045 vs TIP102
| Characteristics | TIP112 | 2N6045 | TIP102 |
|---|---|---|---|
| Collector to base voltage (VCB) | 100V | 100V | 100V |
| Collector to emitter voltage (VCE) | 100V | 100V | 100V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 2.5V | 2 to 4V | 2V |
| Collector current (IC) | 2A | 8A | 8A |
| Pulsed collector current | 4A | - | 15A |
| Base current | 50mA | 120mA | - |
| Power dissipation | 50W | 75W | 80W |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -65 to +150℃ |
| Thermal resistance | 2.5℃/W | 1.67℃/W | 1.56℃/W |
| Gain (hFE) | 500 to 1000hFE | 1000 to 20000hFE | 10000 to 20000Hfe |
| Output capacitance | 100pF | 200Pf | - |
| Package | TO-220 | TO-220 | TO-220 |
TIP112 transistor applications
- Linear and switching industrial applications
- General-purpose amplifier applications
- Low-speed switching applications
- Motor driver applications
- Solar applications
- Battery charger circuit
TIP112 transistor characteristics curves
The graph shows the DC gain characteristics curve of the TIP112 transistor, the graph plots with dc current gain vs collector current.
At a constant collector-to-emitter voltage, the DC gain value curves are plots at two temperature values.
The DC gain variation starts from a particularly low value and reaches a higher limit and then it dips at the end.
The graph shows the safe operating area characteristics of the TIP112 transistor, the graph plots with collector current vs collector to emitter voltage.
The safe operating range curve of the TIP112 transistor is indicated with specs such as pulsed values, switching value, and DC gain value.
