TIP102 transistor electrical specification
- TIP102 is an NPN epitaxial Darlington POWER transistor device
- Collector to emitter voltage is 100V
- Collector to base voltage is 100V
- Emitter to base voltage is 5V
- Collector current is 8A
- Pulsed collector current is 15A
- Base current is 1A
- Power dissipation is 80W
- DC current gain is 1000 to 20000hFE
- Junction temperature & storage temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 2 to 2.5V
- Thermal resistance, junction to the case is 56℃/W
- Output capacitance is 200pF
- High current gain
- Low saturation voltage
|Base terminal is used to trigger the transistor
|Current flows through the collector
|Current flows through the emitter
TIP102 is a Darlington transistor specially made for power applications, the package used for this device is TO-220.
TO-220 package is made of epoxy/plastic material, this will provide higher temperature capacity and compactness.
TO-220 is a through-hole package, this is why we can attach a heat sink with it for heat transfer.
TIP102 electrical specification description & application notes:
In this section we explain the electrical specifications of the TIP102 transistor, this explanation is helpful for the equivalent process by a better understanding of the device.
The voltage specifications of the TIP102 transistor are a collector-to-emitter voltage is 100V, a collector-to-base voltage is 100V, and emitter to base voltage is 5V, the terminal voltage values of the component show that it is a high-voltage device having power applications.
The collector-to-emitter saturation voltage value of the TIP102 transistor is 2 to 2.5V, which is the switching voltage of the device.
The current value of the transistor indicates the load capacity, the collector current value is 8A. The pulsed collector current value is 15A, this value is at a specific condition.
The base current value of the TIP102 transistor is 1A, it is the switching value of the transistor.
The power dissipation value of the TIP102 transistor is 80W, this value is mainly dependent on the device package.
Current gain specs
The current gain value of the TIP102 transistor is 1000 to 20000hFE, it is the amplification ability of the transistor.
Junction temperature/ storage temperature
The junction temperature & storage temperature values are -65 to 150℃, which is the maximum temperature value of the device.
The output capacitance value of the TIP102 transistor is 200Pf.
If you need the datasheet in pdf please click this link
The TIP102 transistor has equivalent devices such as 2N6530, 2N6535, 2N6536, 2SD721, 2N6045G, MJE15028, BDT85F, BDW42G, and MJE15030, each of these devices have the same set of electrical specifications, this will really useful at replacement of TIP102 transistor.
TIP102 Complementary transistor
TIP102 is an NPN Darlington transistor, which had a complementary PNP TIP107 transistor.
Both of them had the same and opposite set of electrical specifications, this is why we can use them for push-pull circuit applications.
TIP102 vs BDT87 vs 2N6045
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|2 to 2.5V
|1 to 1.5V
|Collector current (IC)
|Pulsed collector current
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +150°C
|-65 to +150℃
|1000 to 20000hFE
|1000 to 20000Hfe
TIP102 transistor applications
- Linear and switching applications
- Industrial applications
- Audio power amplifier circuit
- General power-switching applications
- DC/AC converter circuit
- Easy driver for low-voltage DC motor applications
- Battery charger circuit
- Low-speed switching applications.
Graphical characteristics curves of the TIP102 transistor
The figure shows the graphical characteristics of the TIP102 transistor, the graph plots with collector current vs collector to emitter voltage.
The curve plots different base current values, at the initial stage the current increases and becomes constant and at the end current value becomes infinite.
The figure shows the DC current gain characteristics of the TIP102 transistor, the graph plots with DC current gain vs collector current.
At constant collector to an emitter voltage value, the DC current gain increases from a particular value towards a higher value and at the last, it decreases.