S9015 transistor
S9015 transistor electrical specification
- S9015 is a PNP epitaxial silicon transistor device
- Collector to emitter voltage is -45V
- Collector to base voltage is -50V
- Emitter to base voltage is -5V
- Collector current is -100mA
- Power dissipation is 450mW
- DC current gain is 20 to 1000hFE
- Current gain-bandwidth (FT) is 150MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.3V to -0.7V
- Low noise
- Low frequency
S9015 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base terminal will act as the trigger of the transistor |
| 2 | Emitter | The emitter acts as the input for the transistor |
| 3 | Collector | The collector terminal is acting as the output of the transistor |
S9015 transistor package
The S9015 transistor had the TO-92 package, it is a general-purpose transistor mainly used for sample circuits.
The TO-92 package is made with a mixture of epoxy/ plastic material, both these materials are good at heat resistance and also they had more compactness than any material.
The applications based on these transistor components are general-purpose circuits and also TO-92 packages are mostly used for sample circuits.
S9015 transistor explanation for electrical specification and application
In this section, we try to explain the electrical specifications of the S9015 transistor, the specs explanation will help us to know more about the transistor device and it will help us to select perfect applications for this transistor.
Voltage specs
The terminal voltage specs of S9015 are collector to emitter voltage is -45V, collector to base voltage is -50V, and emitter to base voltage is -5V, which is general-purpose application voltage specs.
The collector to emitter saturation voltage value is -0.3V to -0.7V, naturally it is lesser than the base voltage to turn ON the transistor to saturated mode.
Current specs
The collector current value is -100mA, which is the load capability of this transistor device.
Dissipation specs
The power dissipation value of the S9015 transistor is 450mW, it is the dissipation capacity of the transistor.
Current gain specs
The current gain value of the S9015 transistor is 200 to 1000hFE, it is the amplification capacity of this transistor.
Transition frequency
The bandwidth transition frequency value of the S9015 transistor is 150MHz, it is the frequency range of the transistor.
Junction temperature
The junction temperature is -55 to 150℃ for the transistor, it is the capacity of the device at the temperature change.
S9015 transistor DATASHEET
If you need the datasheet in pdf please click this link
S9015 transistor equivalent
The transistor devices such as KSP55, KTC9015, MPSW55, BC557C, BC636, BC527, 2N2907, and S8550 are the equivalent transistors of S9015.
The electrical specifications of these transistors are the same as the S9015 transistor, so we can easily use them in the circuits to make general-purpose applications.
The PINOUT details of all these transistors are not the same, so we need to check and verify it becomes the replacement process.
S9015 transistor complementary
The S9015 PNP general purpose transistor had the S9014 NPN complementary pair transistor, these transistors had the same specifications opposite to the S9015 transistor.
The S9015 PNP transistors will be used in general purpose applications, and both of them are been used in complementary pair amplifier applications.
SMD versions of the S9015 transistor
The S9015 transistor had SMD version transistors such as CMBT9015 (SOT-23) and MMBT9015 (SOT-23).
Both these two SMD versions of S9015 transistors had the same electrical specifications.
S9015 vs KSP55 vs 2N2907
In the table, we listed the electrical specifications of S9015, KSP55, and 2N2907 PNP transistor devices.
This table is really helpful for the replacement process because we have an idea of the electrical specifications.
| Characteristics | S9015 | KSP55 | 2N2907 |
|---|---|---|---|
| Collector to base voltage (VCB) | -50V | -60V | -60V |
| Collector to emitter voltage (VCE) | -45V | -60V | -40V |
| Emitter to base voltage (VEB) | -5V | -4V | -5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -0.3V to -0.7V | -0.25V | -1.6V |
| Collector current (IC) | -100mA | -500mA | -600mA |
| Power dissipation | 450mW | 625mW | 400mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 150MHZ | 105MHZ | 200MHZ |
| Gain (hFE) | 200 To 1000hFE | 50hFE | 300hFE |
| Package | TO-92 | TO-92 | TO-92 |
S9015 transistor applications
- General-purpose switching applications
- Sensor circuits
- Preamp circuits
- Noise amplifier
S9015 transistor characteristics
The figure shows the static characteristics of the S9015 transistor, the graph is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current produces and increases with the increase of base current.
The collector current increases and also collector to emitter voltage become constant.
The figure shows the DC current gain characteristics of the S9015 transistor, the graph is plotted with DC current gain vs collector current.
At a fixed collector to emitter voltage, the DC current gain value increases with respect to collector current, and also gain drops at the end.
