S9014 transistor

S9014 transistor
S9014 transistor

S9014 transistor electrical specification

  • S9014 is an NPN epitaxial BJT silicon transistor device
  • Collector to emitter voltage is 45V
  • Collector to base voltage is 50V
  • Emitter to base voltage is 5V
  • Collector current is 100mA
  • Power dissipation is 450mW
  • DC current gain is 60, 280 and 1000hFE
  • Current gain-bandwidth (FT) is 150 to 270MHz
  • Junction temperature is between -55 to 150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is14 to 0.3V
  • Noise figure (NF) is 9 to 10dB
  • Output capacitance (Ciss) is 2 to 3.5pF
  • Thermal resistance, junction ambient is 250℃/W
  • Low noise device
  • High total power dissipation
  • High DC current gain

S9014 transistor Pinout

S9014 transistor Pinout
S9014 transistor Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Base Base is used as the trigger for the transistor
3 Collector Current flow through the collector 

 

S9014 transistor package

The S9014 transistor has a TO-92 package, it is commonly used as the general-purpose package mainly used for low-power applications.

The TO-92 package is made with epoxy/plastic materials, this is due for two reasons they have high heat resistance and compactness.

The applications based on the S9014 transistor are small amplifier circuits, so we device needs more dissipation and compactness as a component.

Marking the case

The SS9014 transistor component had an “S9014” marking on its case 

S9014 transistor electrical specification description/ application

In this section we try to explain the electrical specifications of the S9014 transistor device, this will help us to know about the component completely.

And at the replacement process, the electrical specifications had a major role to play, so this explanation will also help in that process.

Voltage specs

The terminal voltage specs of the S9014 transistor are collector to base voltage is 50V, collector to emitter voltage is 45V and emitter to base voltage is 5V, the voltage value shows it is a general-purpose device.

The collector to emitter saturation voltage is 0.14 to 0.3V, it is the region switching voltage of the S9014 transistor.

Overall voltage specifications of the S9014 transistor show that it is a low-power device mainly used for audio-based applications.

Current specs

The collector current value of the S9014 transistor is 0.7A, the current value of the S9014 transistor shows the load capacity of the device.

The current values show that it is a low-power device mainly used for low-power switching applications.

Dissipation specs

The power dissipation of the S9014 transistor is 450mW, it is the power dissipation of the device.

The dissipation ability of the device mainly depends on the device package and applications.

Current gain specs

The current gain value of the S9014 transistor is 60 to 1000hFE, this is why these transistors are used for amplifier applications.

The amplifier circuits like a preamp, push-pull amplifier, and low noise circuit applications.

Transition frequency

The bandwidth transition frequency value of the S9014 transistor is 150 to 220MHz, it is the frequency range of the transistor used in audio applications.

Junction temperature

With the junction temperature of -55 to 150℃, the heat capacity of the transistor is mainly dependent on the case.

Noise figure

The noise figure value of the S9014 transistor is 0.9 to 10dB

Output capacitance

The output capacitance value of the S9014 transistor is 2.2 to 3.5pF

S9014 transistor DATASHEET

If you need the datasheet in pdf please click this link

S9014 transistor equivalent

The transistors such as KSP05, KTC9014, MPSW05G, MPSW06, MPSA42, and 2N5551 are the S9014 transistor equivalent.

The electrical specifications of these transistors are the same, so we use them as the equivalent of the S9014 transistor.

The S9014 transistor is a device mainly used for amplifier applications, so specs like DC gain and frequency range are important.

S9014 complementary pair

The S9015 PNP transistor is the complementary pair for the S9014 NPN transistor, this complement pair is used in push-pull amplifier circuits.

Both the transistor device had the same electrical specifications, we can make the Darlington pair network using these transistors.

S9014 vs KSP05 vs MPSA42

In this table, we try to list the electrical specifications of S9014, KSP05, and MPSA42 transistors, this is helpful for the replacement process.

CharacteristicsS9014KSP05MPSA42
Collector to base voltage (VCB)     50V60V300V
Collector to emitter voltage (VCE)45V60V300V
Emitter to base voltage (VEB)5V4V6V
Collector to emitter saturation voltage (VCE (SAT))0.14 to 0.3V   0.25V0.5V
Collector current (IC)100mA500mA500mA
Power dissipation450mW625mW625mW
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55 to +150°C
Transition frequency (FT)270MHZ100MHZ   50MHz
Gain (hFE)60 to 1000hFE50hFE25 to 40hFE
Output capacitance2.2 to 3.5pF-3pF
Noise figure0.9 to 10dB--
PackageTO-92TO-92TO-92

Each of these transistors has different electrical specification property changes, the S9014 is good at audio circuit applications, and this is why S9014 had a moderate voltage and current specs with higher DC current gain apt for an amplifier device.

The KSP05 transistor had a little bit higher current and voltage values, with a low DC gain value, so this will indicate it is a very suitable switching application.

And the MPSA42 is a power transistor in this list, they had a higher voltage and power value, which is why they have power applications.

S9014 transistor applications

  • AF preamp application
  • Used in class B amplifier applications
  • Low noise stage audio equipment
  • Push-pull circuits

Characteristics curves of S9014 transistor

static characteristics of the S9014 transistor
static characteristics of the S9014 transistor

The figure shows the static characteristics of the S9014 transistor, the graph is plotted with collector current vs collector to emitter voltage.

At different base current ranges, the collector current produces curves with respect to the collector to emitter voltage.

The collector current increases with an increase in base current and the voltage value will drop at the end.

DC current gain characteristics of the S9014 transistor
DC current gain characteristics of the S9014 transistor

The figure shows the DC current gain characteristics of the S9014 transistor, the graph is plotted with DC current gain vs collector current.

At the fixed collector to emitter voltage, the DC current gain value increases from a higher value with respect to collector current, and then the gain of the transistor drops at the end.

FM transmitter circuit using an S9014 transistor

FM transmitter circuit, the circuit consists of an S9014
FM transmitter circuit, the circuit consists of an S9014

The figure shows the FM transmitter circuit, the circuit consists of an S9014 transistor with some passive components.

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