S8550 transistor
S8550 transistor electrical specification
- S8550 is a PNP epitaxial silicon transistor device
- Collector to emitter voltage is -25V
- Collector to base voltage is -40V
- Emitter to base voltage is -6V
- Collector current is -1.5A
- Power dissipation is 1W
- DC current gain is 40 to 300hFE
- Current gain-bandwidth (FT) is 100 to 200MHz
- Junction temperature is between -65 to 150℃
- Thermal resistance is 125℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is -0.28V to -0.50V
- Output capacitance is 15pF
S8550 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | The emitter acts as the input for the transistor |
| 2 | Base | The base terminal triggers which triggers the transistor |
| 3 | Collector | The collector terminal is acting as the output of the transistor |
S8550 transistor package
The S8550 transistor had the TO-92 device package, it is a common general-purpose transistor package.
The TO-92 package is made with epoxy and plastic material, these materials had higher heat resistance and also more compactness.
S8550 transistor explanation for electrical specification and application
In this section, we discuss the electrical specifications of the S8550 transistor, this explanation will be really helpful for the replacement process of this transistor device.
Voltage specs
The terminal voltage specs of the S8550 transistor are collector to the base is -40V, collector to emitter voltage is -25V, and emitter to base voltage is -6V, the voltage specifications show that the S8550 transistor had low power applications.
The emitter to collector saturation voltage value is -0.28V to -0.50V, the saturated voltage is always lesser than the base voltage of the device.
The saturation voltage of the S8550 transistor shows that they had more applications with switching circuits.
Current specs
The collector’s current value is -1.5A, the current value of the S8550 transistor shows the load capacity of the device.
Dissipation specs
The power dissipation value of the S8850 transistor is 1W, it is the dissipation capacity of the transistor.
Current gain specs
The current gain value of the S8850 transistor is 40 to 300hFE, it is the amplification capacity of this transistor.
Transition frequency
The bandwidth transition frequency value of the S8850 transistor is 100 to 200MHz, it is the frequency range of the transistor.
Junction temperature
The junction temperature is -55 to 150℃ for the S8850 transistor, it is the capacity of the device at the temperature change.
The thermal resistance of ambient
The thermal resistance value of the S8550 transistor is 125℃/W, it is the value of the ambient of this transistor.
S8550 transistor DATASHEET
If you need the datasheet in pdf please click this link
S8550 transistor equivalent
The transistors such as MPS750, MPS8550, BC527, BC528, 2N2906, and BC527 are the PNP transistor device.
The electrical specifications of these transistor devices are the same as the S8550 transistor, so we easily replace them based on the specs of the device.
Before the replacement process, we need to check and verify the PINOUT details of the transistors.
S8550 transistor complementary
The S8550 transistor had the complementary pair S8050 NPN transistor, these complementary pairs had many applications at many circuits.
SMD versions of the S8850 transistor
The S8850 transistor device had SMD version transistor devices such as MMBT3702 (SOT-23) and MPS8550 (SOT-23).
The main electrical specifications of SMD version S8850 transistor are the same, but the power dissipation specs of they are different.
S8850 vs MPS750 vs BC527
In the table, we listed the electrical specifications of S8550, MPS750, and BC527 transistors, this will be helpful for a better understanding of the transistor devices.
| Characteristics | S8850 | MPS750 | BC527 |
|---|---|---|---|
| Collector to base voltage (VCB) | -40V | -60V | -60V |
| Collector to emitter voltage (VCE) | -25V | -40V | -60V |
| Emitter to base voltage (VEB) | -6V | -5V | -6V |
| Collector to emitter saturation voltage (VCE (SAT)) | -0.28 to 0.50V | -0.3V to 0.5V | -0.7 to 1.2V |
| Collector current (IC) | -1.5A | -2A | -1A |
| Power dissipation | 1W | 625mW | 625mW |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 100 to 200MHZ | 75MHZ | 100MHZ |
| Gain (hFE) | 40 to 300hFE | 75hFE | 40 to 400hFE |
| Package | TO-92 | TO-92 | TO-92 |
S8550 transistor applications
- General-purpose switching applications
- Audio amplifier circuit
- Push-pull transistor
- Low signal applications
- Small audio projects
- Driver load under -700mA
S8550 transistor characteristics
The figure shows the static characteristics of the S8550 transistor, the graph is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current will be increased from a lower value to a higher one, then the collector current will be constant.
The voltage value will increase towards the higher value and become infinite.
The figure shows the DC current gain characteristics of the S8550 transistor, the graph is plotted with dc current gain vs collector current.
At a constant collector to an emitter voltage value, the current gain value will be increasing at the initial stage and decreases at the end.
The figure shows the saturation voltage value of the S8550 transistor, the graph is plotted with the base to emitter saturation voltage and emitter to collector saturation value with collector current.
