RFP30N06LE MOSFET
RFP30N06LE specs
- RFP30N06LE is an N-channel enhancement mode POWER MOSFET
- Drain to source voltage (VDSS) is 60V
- Gate to source voltage (VGS) is +10V/-8V
- Gate to the threshold voltage (VGS (th)) is 1V to 2V
- Drain current (ID) is 30A
- Power dissipation (PD) is 96W
- Total gate charge (Qg) is 62nC
- Drain to source on-state resistance (RDS (ON)) 047Ω
- Rise time (tr) is 88ns
- Thermal resistance junction to ambient (Rth j-A) is 80℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) is 125ns
- Input capacitance is 1350pf
- Output capacitance is 290pf
- ESD rated
- Avalanche rated
- Logic level
- Temperature compensating model
- UIS rated curve
- Outstanding performance
- Related literature
RFP30N06LE Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
RFP30N06LE MOSFET package
The RFP30N06LE MOSFET had TO-220AB/TO-262AA/TO-263AB packages, it is a high-power MOSFET device which having three common semiconductor packages.
TO-220AB is a three-terminal bulkier package made of epoxy/plastic material, which had higher temperature capacity and it is a through-hole package to which we can attach a heat sink with it.
RFP30N06LE POWER MOSFET electrical specification explanation
In this section we explain the electrical specifications of RFP30N06LE MOSFET, it will help us to know more about this device and this will support us in the replacement process.
Voltage specs
The voltage specs of RFP30N06LE MOSFET are a drain-to-source voltage of 60V, a gate-to-source voltage is +10V & -8V, and gate to source threshold voltage is 1 to 2V.
The voltage specifications of RFP30N06LE MOSFETs show that it is a POWER MOSFET device having higher voltage specs.
Current specs
The drain current value of RFP30N06LE MOSFET is 30A, the current specs are proper for driver applications.
Dissipation specs
The power dissipation value of RFP30N06LE MOSFET is 96W, they must be mainly dependent on the device package.
Drain to source on-state resistance
The on-state resistance value of RFP30N06LE MOSFET is 0.047Ω, it is the maximum resistance value of the device.
Junction temperature/ storage temperature
The junction temperature/storage temperature of the RFP30N06LE MOSFET is -55 to +175℃.
Thermal resistance junction to ambient
The thermal resistance of RFP30N06LE MOSFET is 80℃/W
Total gate charge
The total gate charge value of RFP30N06LE MOSFET is 62nC.
Rise time
The rise time value for RFP30N06LE MOSFET is 88ns
Input capacitance
The input capacitance value of RFP30N06LE MOSFET is 1350pf.
Output capacitance
The output capacitance value of RFP30N06LE MOSFET is 290pf
RFP30N06LE DATASHEET
If you need the datasheet in pdf please click this link
RFP30N06LE EQUIVALENT
The RFP30N06LE MOSFET device has 2SK1910, BUZ12AL, IRLZ40, RFP25N05L, STP36N05L, and IRLSZ44 are the equivalent devices, each of these devices has the same set of electrical specifications.
Before the replacement process, we need to check and verify the voltage and PINOUT details of these devices, this is because it is dangerous at the circuit level.
RFP30N06LE vs IRFZ40
In this table, we list and compare the electrical specifications of RFP30N06LE and IRFZ40 MOSFET devices.
| Characteristics | RFP30N06LE | IRFZ40 |
|---|---|---|
| Drain to source voltage (VDSS)) | 60V | 60V |
| Gate-to-source voltage (VGS) | +10V & -8V | 20V |
| The gate threshold voltage (VG(th)) | 1V to 2V | 2V to 4V |
| Drain current (ID) | 30A | 30A |
| Total gate charge (Qg) | 62nC | 67nC |
| Power dissipation (PD) | 96W | 150W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175°C |
| Drain to source on-state resistance (RDS) | 0.047Ω | 0.028Ω |
| Thermal resistance | 80℃/W | 62℃/W |
| Rise time (tr) | 88ns | 86ns |
| Reverse recovery time (trr) | 125ns | 180ns |
| Input capacitance | 130pf | 1900pf |
| Output capacitance | 290pf | 920pf |
| Package | TO-220/TO-262AA/ TO-263AB | TO-220AB |
Characteristics curves of RFP30N06LE MOSFET
The figure shows the peak current capability of RFP30N06LE MOSFET, the graph plots peak current vs pulse width and gate-source voltage.
The maximum current value starts to increase from peak to low value with respect to the pulse width value.
The figure shows the safe operating area curve of RFP30N06LE MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, and switching speed.
RFP30N06LE Arduino
The figure shows the Arduino-based circuit, the circuit consist of an Arduino UNO board, RFP30n06LE MOSFET, resistor, and lamp load.
The gate terminal connects to the PWM section, drain to load, and source to the ground terminal, as when switches on the bulb flashes with a frequency we set inside the program.
Applications of RFP30N06LE MOSFET
- Switching regulators
- Switching converters
- Motor driver
- Relay drivers
- Integrated circuit
- Power supply
- BMS system
- Battery operating circuit
- Solar charger
