- P60NF06 is an N-channel silicon POWER MOSFET device
- Drain to source voltage (VDS) is 60V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 60A
- Pulsed drain current (IDM) is 240A
- Power dissipation is (PD) is 110W
- Total gate charge (Qg) is 49 to 60nC
- Drain to source on-state resistance (RDS (ON)) 014 to 0.016Ω
- Rise time (tr) is 108ns
- Peak diode recovery voltage dv/dt is 4V/ns
- Input capacitance is 1810pF
- Output capacitance is 360pF
- Thermal resistance junction to case (Rth j-C) is 36℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 75ns
- Exceptional dv/dt capability
- 100% avalanche tested
- Application-oriented characterization
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal is used to trigger the MOSFET device|
|2||DRAIN||The drain is the input terminal of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
The P60NF06 MOSFET is a medium-power device having TO-220 and TO-220FP device packages.
TO-220/TO-220FP three-terminal device bulkier package made with epoxy/plastic, which had higher temperature capacity and compactness for circuit making.
The TO-220 package back portion is coated with metal for transferring heat, it is a through-hole package, so we had the provision to attach a heat sink with it.
P60NF06 electrical specification explanation
In this section, we explain the main electrical specification of P60NF06 MOSFET.
This explanation is helpful for a better understanding of the device replacement process.
The voltage specifications of P60NF06 MOSFET are a drain-to-source voltage is 60V, a gate-to-source voltage is +/-20V, and a gate threshold voltage is 2V to 4V.
The voltage specs of P60NF06 MOSFET show that they are been used for power supply and converter applications.
The drain current value of P60NF06 MOSFET is 60A, and the current value of the device shows the maximum load capacity.
The pulsed drain current value of P60NF06 MOSFET is 240A, it is the value at specific conditions.
The current specifications of P60NF06 MOSFET show that it had more applications at driver and charger applications.
The power dissipation value of P60NF06 is 110W, and the power dissipation capacity is calculated by the product of voltage and current value at the device.
Drain to source on-state resistance
The drain to source on-state resistance is 0.014 to 0.016Ω.
The junction temperature of the P60NF06 MOSFET is -55 to +175℃.
Thermal resistance junction to case
The thermal resistance junction to the case of P60NF06 MOSFET is 1.36℃/W
The rise time value for P60NF06 MOSFET is 108ns, it is the switching time offered by the MOSFET.
Body diode reverse recovery time
The body diode reverses the recovery time of P60NF06 MOSFET is 75ns, it is the value of the diode.
If you need the datasheet in pdf please click this link
The MOSFET devices UTT80N06, 110N10, CS4145, FTK75N75, 75N75, and MXP1006AT are the equivalent of P60NF06 MOSFET, each of the devices have the same set of electrical specifications.
The specs such as voltage, current, and PINOUT details are been important for the replacement process, so check and verify.
P60NF06 vs IRFZ44N
|Drain to source voltage (VDS))||60V||55V|
|Gate to source voltage (Vgs)||20V||20V|
|Gate threshold voltage (Vg(th))||2 to 4V||2 to 4V|
|Drain current (Id)||60A||49A|
|Pulsed drain current (IDM)||240A||160A|
|Total gate charge (Qg)||49 to 66nC||63nC|
|Power dissipation (PD)||110W||94W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +175°C|
|Drain to source on-state resistance (RDS)||0.014 to 0.016Ω||0.032Ω|
|Rise time (tr)||108ns||60ns|
|Reverse recovery time (trr)||75ns||63 to 95ns|
Graphical characteristics of P60NF06 MOSFET
The figure shows the output characteristics of P60NF06 MOSFET, the drain current vs drain to source voltage.
At the different gate to source voltage values, the current value increases from zero value and became constant.
The figure shows the safe operating area of the P60NF06 MOSFET, the graph plots with drain current vs drain to source voltage and switching speed.
Applications of P60NF06 MOSFET
- DC/DC converter circuit
- Computer applications
- UPS circuit
- Battery charger circuit
- Motor controller circuit
- Inverter circuit
- Solar charger