P55NF06 MOSFET
P55NF06 MOSFET specification
- P55NF06 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 60V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 50A
- Pulsed drain current (IDM) is 200A
- Power dissipation is (PD) is 110W
- Total gate charge (Qg) is 5 to 60nC
- Drain to source on-state resistance (RDS (ON)) 015 to 0.018Ω
- Zero gate voltage drain current (IDSS) is 1 to 10uA
- Rise time (tr) is 50ns
- Peak diode recovery voltage dv/dt is 7V/ns
- Input capacitance is 1300pF
- Output capacitance is 300pF
- Thermal resistance junction to ambient (Rth j-A) is 5℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 75ns
P55NF06 MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal is used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
P55NF06 MOSFET package
The P55NF06 MOSFET had three different device packages such as TO-220, TO-220FP, and D2PAK.
The TO-220FP and TO-220 are much similar device packages that had almost the same properties, but D2PAK is a package mostly attached to the circuit board.
TO-220 package is made with two different sections, such as the main portion is made with epoxy/plastic material which had higher heat resistance and the back portion is made with the metal material.
The metal portion is made for attaching the heat sink with it because we can easily transfer the heat towards the heat sink.
And the main advantage of the TO-220 package is that it is the bulkier package with less weight.
P55NF06 MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of P55NF06 MOSFET, the specs explanation will be really helpful for a better understanding of this device for the replacement process.
Voltage specs
The terminal voltage specs of P55NF06 MOSFET are a drain to source voltage is 60V, the gate to source voltage is 20V, and gate to source threshold voltage is 2V to 4V, the voltage specs show that it is a power MOSFET device.
The overall voltage specifications of P55NF06 MOSFET show that they had many applications in switching and controlling circuits.
Current specs
The drain current value of P55NF06 MOSFET is 50A, and the current values of the device show the load capacity of the device at circuits.
The pulsed drain current is 200A, and the pulsed current of the device is always 4times larger than the normal current.
The current values of the P55NF06 MOSFET show that it is a device mainly used for heavy system applications.
Zero gates voltage drain current
The value for zero gate voltage drain current is 1 to 10uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.
Dissipation specs
The power dissipation value of P55NF06 MOSFET is 110W, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 0.015 to 0.018Ω, it is the overall resistance offered by the MOSFET.
Junction temperature
The junction temperature of the P55NF06 MOSFET is –55 to +175℃.
Thermal resistance junction to ambient
The thermal resistance of P55NF06 MOSFET is 62.5℃/W
Total gate charge
The total gate charge value of P55NF06 is 44.5 to 60nC, it is the charge needed to trigger the MOSFET.
Rise time
The rise time value for P55NF06 MOSFET is 50ns, it is the switching time offered by the MOSFET.
Input capacitance
The input capacitance value of P55NF06 MOSFET is 1300pF, it is a higher value compared with other devices.
Output capacitance
The output capacitance value of P55NF06 MOSFET is 300pF, it is a moderate value.
Body diode reverse recovery time
The body diode reverses the recovery time of P55NF06 MOSFET is 75ns.
P55NF06 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
P55NF06 MOSFET EQUIVALENT
The MOSFET devices such as IRF2807, IRFB3207, IRFZ44N, and IRF3205 are the equivalent MOSFETs of the P55NF06 device.
The electrical specifications of these transistors are the same as P55NF06 MOSFET, this is why we can use them as the equivalent.
The P55NF06 MOSFET is a high-end component mainly used in a large system, so before the replacement, we need to check and verify the PINOUT details of each MOSFET device.
P55NF06 vs IRFZ44N
In this table we try to compare similar MOSFET devices such as P55NF06 and IRFZ44N, the electrical specifications comparison is really helpful for a better understanding of these MOSFETs.
| Characteristics | P55NF06 | IRFZ44N |
|---|---|---|
| Drain to source voltage (VDS)) | 60V | 55V |
| Gate to source voltage (Vgs) | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V |
| Drain current (Id) | 50A | 49A |
| Pulsed drain current (IDM) | 200A | 160A |
| Zero gate voltage drain current (IDSS) | 1 to 10uA | 25 to 250uA |
| Total gate charge (Qg) | 44.5 to 60nC | 63nC |
| Power dissipation (PD) | 110W | 94W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175°C |
| Thermal resistance | 62.5℃/W | 62℃/W |
| Drain to source on-state resistance (RDS) | 0.015 to 0.018Ω | 0.032Ω |
| Rise time (tr) | 50ns | 60ns |
| Output capacitance | 300pF | 360pF |
| Input capacitance | 1300pF | 1470pF |
| Reverse recovery time (trr) | 75ns | 63 to 95ns |
| Package | TO-220 | TO-220C |
Both the MOSFET devices had the same electrical specifications, we can use them as the equivalents at the circuits.
Characteristics curves of P55NF06 MOSFET
The figure shows the output characteristics of P55NF06 MOSFET, the graph plotted with drain current vs drain to source voltage.
At the different gate to source voltage ranges, the drain current increases and become constant with respect to drain to source voltage.
The figure shows the safe operating area of the P55NF06 MOSFET, the graph is plotted with drain current vs drain to source voltage.
Induction coil circuit using P55NF06 MOSFET
The figure shows the induction coil circuit using P55NF06 MOSFET, the circuit consists of two P55NF06 MOSFET devices and two1N4007 diodes.
As when the power supply reaches the MOSFET, it will trigger ON and the diodes are used to drive both MOSFETs.
The P55NF06 MOSFETs produce a higher current flow through the circuit for energizing the coil.
Applications of P55NF06 MOSFET
- Switching applications
- DC/DC converters
- Telecom applications
- Computer applications
- Low gate charge driver applications
- Electric power steering (EPS)
- Anti-locking braking system (ABS)
- Wiper control system
- Climate control system
- Power door
