NTE159M transistor

NTE159M transistor
NTE159M transistor

NTE159M specification

  • NTE159M is a PNP industry-standard bipolar junction silicon transistor device
  • Collector to emitter voltage (VCE) is -60V
  • Collector to base voltage (VCB) is –60V
  • Emitter to base voltage (VEB) is -5V
  • Collector current is (ID) is –600mA
  • Power dissipation (PD) is 4W
  • DC current gain is 50 to 300hFE
  • Transition frequency (FT) is 200MHz
  • Junction temperature is between -65 to +200℃
  • Collector to emitter saturation voltage (VCE (SAT)) is -0.4 to -1.6V
  • Output capacitance (Co) is 8pF
  • Input capacitance (Ci) is 30pF
  • Rise time (tr) is 20 to 40ns
  • Used for medium-speed switching applications

NTE159M transistor Pinout

NTE159M transistor Pinout
NTE159M transistor Pinout
Pin Number Pin Name Description
1 Base The base terminal is the trigger for the transistor
2 Collector Current flow through the collector 
3 Emitter  Current flows through the emitter


NTE159M PNP transistor package

The NTE159M PNP transistor has package TO-18, it is a higher capacity semiconductor device package.

TO-18 transistor package is a three-terminal device made with metal, which is capable of higher temperature capacity and compact in size useful for small circuit applications.

NTE159M PNP transistor electrical specification description

In this section, we try to explain the electrical specifications of the NTE159M PNP transistor.

Voltage specs

The voltage specifications of the NTE159M PNP transistor are collector to emitter voltage is -60V, collector to base voltage is -60V, and emitter to base voltage is -5V.

The collector to emitter saturation voltage value is -0.4V to -1.6V, the region switching voltage value.

The terminal voltage value and saturation voltage value of the NTE159M transistor show that it is a moderate voltage transistor having low voltage applications.

Current specs

The collector current value of the NTE159M PNP transistor is -600mA, which is the maximum load capacity of the transistor device.

Dissipation specs

The power dissipation of the NTE159M PNP transistor is 0.4W, it is the product of voltage and current produced at the transistor.

Current gain specs

The DC current gain of the NTE159M PNP transistor is 50 to 300hFE, the gain value of the device shows it is also an amplifier device.    

Transition frequency

The transition frequency value of the NTE159M PNP transistor is 200MHz, this is the frequency range of the device.

Junction temperature/ storage temperature

The junction temperature/ storage temperature of -65 to +200℃.

Output capacitance

The output capacitance of the NTE159M transistor is 8pF

Rise time

The rising time of the NTE159M transistor is 20 to 40ns

NTE159M transistor DATASHEET

If you need the datasheet in pdf please click this link

NTE159M equivalent

The transistor devices such as 2N2907, 2N3906, BD140, TIP127, TIP42, 2SA1943, and BC556 are the equivalent devices of the NTE159M transistor, these transistors have the same set of electrical specifications.

NTE159M PNP complementary pair

The NTE159M PNP transistor has complementary pair of NTE123A PNP transistors, this complementary pair had the same set of electrical specifications, so we use them in push-pull circuit applications.

NTE159M SMD version transistors

The SMD devices such as KN2907AS (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223), and MMST2907A (SOT-323), almost all the electrical specifications are the same.

NTE159M vs 2N2907

In this table, we list the electrical specifications of NTE159M and 2N2907 devices, this comparison table is really helpful for better understanding.

Collector to emitter voltage (VCE)     -60V-40V
Collector to base voltage (VCB)-60V-60V
Emitter to base voltage (VEB)-5V-5V
Collector to emitter saturation voltage (VCE (SAT))-0.4 to -1.6V-0.4 to -1.6V
Collector current (IC)-600mA-600mA
Power dissipation0.4W400W
Junction temperature/ storage temperature (TJ / Tstg)-65 to +200°C-55 to +200°C
Transition frequency (FT)200MHZ200MHZ
Gain (hFE)50 to 300hFE55 to 250hFE
Output capacitance8pF8pF
Input capacitance30pF30Pf

Both of the transistors NTE159M and 2N2907 have a similar set of electrical specifications, we can use 2N2907 transistors as the replacement for the circuits.

NTE159M transistor applications

  • Switching applications
  • High-frequency amplifier circuit
  • Class B-amplifier circuit
  • Low power amplifier
  • Lamp flasher circuit
  • Push-pull circuit
  • Darlington pair

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