NTE123AP NPN transistor

NTE123AP NPN transistor
NTE123AP NPN transistor

NTE123AP transistor electrical specification

  • NTE123AP is an NPN silicon BJT transistor device
  • Collector to emitter voltage is 40V
  • Collector to base voltage is 60V
  • Emitter to base voltage is 6V
  • Collector current is 600mA
  • Power dissipation is 625mW
  • DC current gain is 20 to 300hFE
  • Current gain-bandwidth (FT) is 250MHz
  • Junction temperature is between -55 to 150℃
  • Thermal resistance junction to ambient is 200℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is75 to 1.2V
  • Rise time is 20ns
  • Audio amplifier device

NTE123AP transistor Pinout

NTE123AP transistor Pinout
NTE123AP transistor Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Base Base terminal is used to trigger the device
3 Collector Current flow through the collector 


NTE123AP NPN transistor package

The NTE123AP NPN transistor device has a TO-92 package, it is a general-purpose device covering.

TO-92 is a three-terminal package that is made of epoxy/plastic material, this will provide two main advantages for the device, and it provides higher temperature withstanding capacity and less component weight.

NTE123AP NPN transistor electrical specification description

In this section, we explain the important electrical specifications of the NTE123AP transistor, this explanation is really helpful for the understanding of the device for the replacement process.

Voltage specs

The voltage specs of the NTE123AP transistor are collector to emitter voltage is 40V, collector to base voltage is 60V, and emitter to base voltage is 6V, the terminal voltage value of the device shows it is a low voltage component.

The collector to emitter saturation voltage is 0.75V to 1.2V, it is the region switching voltage value of the device.

Voltage specifications of the NTE123AP transistor indicate it is a general-purpose device which had more low voltage applications.

Current specs

The collector current value of the NTE123AP transistor is 600mA, the current value indicates the maximum load capacity of the device.

Dissipation specs

The power dissipation of the NTE123AP transistor is 625mW, the dissipation ability is the product of voltage and current at the device.

Current gain specs

The DC gain value of the NTE123AP transistor is 20 to 300hFE, which shows the amplification capability of the device

Transition frequency

The bandwidth transition frequency value of the NTE123AP transistor is 250MHz.

Junction temperature/ storage temperature

 The temperature range of the NTE123AP transistor is -55 to 150℃.

Thermal resistance between junctions to case

The thermal resistance of the NTE123AP transistor is 200℃/W.

NTE123AP transistor DATASHEET

If you need the datasheet in pdf please click this link

NTE123AP transistor equivalent

The NTE123AP NPN transistor has equivalent devices such as 2N4401, BC537, MPS651, PN4033, MPS651G, PN2222A, ZTX450, and KSC1008, each of these devices have the same set of electrical specifications.

The specifications like voltage specs and PINOUT details are been important for the replacement process, so we need to check and verify for a proper replacement.

NTE123AP complementary pair

The NTE123AP NPN transistor has a complementary pair device NTE159 PNP transistor, both of these transistors have the same and opposite electrical specifications.

SMD version of NTE123AP NPN transistor

The 2SD602A (SOT-23), DXT2222A (SOT-89), KTN2222AU (SOT-323), MMBT100 (SOT-23) and MMBT4401 (SOT-23) are the SMD version equivalent device of NTE123AP transistor.

NTE123AP vs BC537 vs MPS651

In the table below, we listed the electrical specification comparison of NTE123AP, BC537, and MPS651 transistors, this comparison is very useful for the replacement process.

Collector to base voltage (VCB)      60V60V80V
Collector to emitter voltage (VCE)40V60V60V
Emitter to base voltage (VEB)6V6V5V
Collector to emitter saturation voltage (VCE (SAT))0.75 to 1.2V     0.7V0.5V
Collector current (IC)600mA1A2A
Power dissipation625mW1.5W625mW
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55 to +150°C
Transition frequency (FT)250MHZ100MHZ   75MHz
Gain (hFE)20 to 300hFE40 to 400hFE75hFE
Output capacitance-15pf-
PackageTO-92TO-92    TO-92

NTE123AP transistor applications

  • Low power switching applications
  • Small signal amplifier
  • Microphone circuits
  • Noise filter circuit

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