MPSA42 transistor

MPSA42 transistor
MPSA42 transistor

MPSA42 electrical specification

  • MPSA42 High voltage amplifier NPN transistor device
  • Collector to emitter voltage is 300V
  • Collector to base voltage is 300V
  • The emitter to base voltage is 6V
  • Collector current is 500mA
  • Power dissipation is 625mW
  • DC current gain is 25 to 40hFE
  • Junction temperature is between -55 to +150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is5V
  • Transition frequency is 50MHz
  • Thermal resistance is 200℃/W

MPSA42 transistor Pinout

MPSA42 transistor Pinout
MPSA42 transistor Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Base Base is used to trigger the transistor
3 Collector Current flows through the collector

 

MPSA42 NPN transistor package

The MPSA42 NPN high voltage transistor device has a TO-92 package, it is normally used for general purpose devices.

TO-92 is a three-terminal transistor package made of epoxy/plastic material, which is useful for higher heat resistance properties and provides less weighted electronic components.

MPSA42 NPN transistor electrical specification description

In this section we explain the electrical specifications of the MPSA42 HIGH voltage transistor, this description will be used for a detailed understanding of the device.

Voltage specs

The voltage specs of the MPSA42 NPN transistor are collector to emitter voltage is 300V, collector to base voltage is 300V, and emitter to base voltage is 6V, which is the terminal voltage value of this device.

The collector to emitter saturation voltage value is 0.5V, it is the region switching voltage value of the MPSA42 transistor.

The overall voltage value of the MPSA42 transistor shows that it is a HIGH voltage device used for high-power applications.

Current specs

The collector current value of the MPSA42 transistor is 500mA, this is the load capacity of the device.

Dissipation specs

The power dissipation at the MPSA42 transistor is 625mW, the dissipation ability will be mainly dependent on the device package.

DC current gain specs

The current gain value of the MPSA42 transistor is 25 to 40Hfe, the DC gain value influences the amplification ability of the device.

Junction temperature/ storage temperature

 The junction temperature & storage temperature of -55 to 150℃.

Thermal resistance

The thermal resistance of the MPSA42 transistor ambient is 200℃/W

Transition frequency

The transition frequency of the MPSA42 transistor is 50MHz, the high voltage high power transistor had a low-frequency range.

MPSA42 NPN transistor DATASHEET

If you need the datasheet in pdf please click this link

MPSA42 equivalent

The MPSA42 NPN transistor had equivalent devices such as 2N6516, BFR88, MPSD01, KSP42, ZTX457, PE7059, and 2N6517, all of these transistor devices have similar electrical specifications, we can use them as equivalent devices at some applications.

MPSA42 NPN transistor complementary

MPSA92 is the PNP transistor complementary to the MPSA42 transistor.

MPSA42 SMD version transistor 

The SMD transistors such as MMBT42 (SOT-23), PZTA42 (SOT-223), and KST42 (SOT-23) are the SMD equivalent of the MPSA42 transistor.

MPSA42 vs 2N6516 vs ZTX457

In the table below we listed the electrical specifications of MPSA42, 2N6516, and ZTX457 transistors.

CharacteristicsMPSA422N6516ZTX457
Collector to base voltage (VCB)     300V300V300V
Collector to emitter voltage (VCE)300V300V300V
Emitter to base voltage (VEB)6V6V5V
Collector to emitter saturation voltage (VCE (SAT))0.5V0.30 to 1V0.3V
Collector current (IC)500mA500mA500mA
Power dissipation625mW625mW1W
Junction temperature (TJ)-55 to +150°C-65 to +150°C-55 to +200°C
Thermal resistance200℃/W--
Transition frequency (FT)50MHz40 to 200MHZ75MHz
Gain (hFE)25 to 40hFE30 to 270hFE25 to 300hFE
PackageTO-92TO-92TO-92

Characteristics curves of MPSA42 NPN transistor

DC current gain characteristics of the MPSA42
DC current gain characteristics of the MPSA42

The figure shows the DC current gain characteristics of the MPSA42 transistor, the graph plots with dc current gain vs collector current.

At a fixed collector to an emitter voltage value, the dc current gain value of the transistor increases from a particular value and becomes constant, then dips at the end.

safe operating area characteristics of the MPSA42
safe operating area characteristics of the MPSA42

The figure shows the safe operating area characteristics of the MPSA42 transistor, the graph plots with collector current, collector to emitter voltage, and switching speed.

MPSA42 NPN HIGH voltage transistor applications

  • Video output applications
  • High voltage applications
  • High voltage switching applications
  • Speed control of low-current motor
  • High voltage stepper motor
  • UPS
  • Battery charger circuit
  • Power supply applications
  • Inverter circuit 

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