MPSA18 transistor
MPSA18 specification
- MPSA18 is a general-purpose NPN transistor device
- Collector to emitter voltage is 45V
- Collector to base voltage is 45V
- The emitter to base voltage is 5V
- Collector current is 100mA
- Power dissipation is 625mW
- DC current gain is 400 to 1500hFE
- Junction temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is2 to 0.3V
- Transition frequency is 100MHz
- Thermal resistance is 200℃/W
- Noise figure is 5dB
- Output capacitance is 5Pf
- Low noise transistor device
- Amplifier transistor
MPSA18 Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the collector |
| 2 | Base | Base terminal is the trigger for the transistor |
| 3 | Collector | Current flows through the emitter |
MPSA18 transistor package
The MPSA18 transistor had a TO-92 transistor package, mostly these packages are been for general-purpose transistor devices.
TO-92 package is made with epoxy/plastic materials for high heat resistance property and it is a package having much more compactness and less weight.
Marking the case
The marking of this transistor is “MPSA18” on the case
MPSA18 transistor electrical specification description
In this explanation, we try to descript the electrical specifications of the MPSA18 transistor.
The electrical specifications description of the MPSA18 transistor is really helpful for a better understanding and use for the replacement process.
Voltage specs
The voltage specs of the MPSA18 transistor are collector to emitter voltage is 45V, collector to base voltage is 45V and emitter to base voltage is 6.5V.
The collector to emitter saturation voltage is 0.2 to 0.3V, it is the voltage specs lesser than the base voltage and it is the region switching voltage of this transistor device.
The voltage specifications of the MPSA18 transistor show that it is a general-purpose device mainly used for small circuits.
Current specs
The collector current value of the MPSA18 transistor is 100mA, the current value shows that the MPSA18 transistor had a load capacity under 100mA.
Dissipation specs
The power dissipation at the MPSA18 transistor is 625mW, the device dissipation mainly depends on the transistor package and overall capacity.
It is the power dissipation value for general-purpose transistor devices.
DC current gain specs
The current gain value of MPSA18 is 400 to 1500hFE, the DC current value shows that it is capable of amplifier and regulator applications.
The MPSA18 transistor has multiple amplifier applications.
Junction temperature
The junction temperature of -55 to 150℃, and the MPSA18 is a general-purpose transistor.
Thermal resistance
The thermal resistance of the MPSA18 transistor ambient is 200℃/W
Noise figure
The noise figure value of the MPSA18 transistor is 1.5dB, one of the main features of MPSA18 is the noise operation.
Output capacitance
The output capacitance of the MPSA18 transistor is 6.5Pf.
MPSA18 transistor DATASHEET
If you need the datasheet in pdf please click this link
MPSA18 transistor equivalent
The MPSA18 transistor had equivalent devices such as 2N5088, NTE47, KSP06, MPS651, MPSA06, MPSW05, ZTX692B, and MPSA18G. Most of the electrical specifications of these transistors are the same as MPSA18.
The replacement of the MPSA18 transistor is easier than other transistor devices because it is a general-purpose low-power device, which had multiple options as the electronic component.
MPSA18 vs 2N5088 vs KSP05
In the table below, we try to list the electrical specifications of MPSA18, 2N5088 and KSP05 transistors.
This electrical specification listing will be helpful in the replacement process of the MPSA18 transistor.
| Characteristics | MPSA18 | 2N5088 | KSP05 |
|---|---|---|---|
| Collector to base voltage (VCB) | 45V | 35V | 60V |
| Collector to emitter voltage (VCE) | 45V | 30V | 60V |
| Emitter to base voltage (VEB) | 6.5V | 3V | 4V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.2 to 0.3V | 0.5V | 0.25V |
| Collector current (IC) | 100mA | 50mA | 500mA |
| Power dissipation | 625mW | 625mW | 625mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Thermal resistance | 200℃/W | 200℃/W | - |
| Transition frequency (FT) | 100MHz | 50MHZ | 100MHz |
| Noise figure | 1.5dB | 3dB | - |
| Gain (hFE) | 400 to 1500hFE | 300 to 1200hFE | 50hFE |
| Package | TO-92 | TO-92 | TO-92 |
The MPSA18 and 2N5088 are similar types of transistor devices, the main specialty of MPSA18 transistors is they are amplifier circuit components with low noise properties.
The electrical specification wishes 2N5088 transistor had almost similar with MPSA18 transistor, so we can use them as the replacement.
The KSP05 is a little bit different transistor compared to MPSA18, they had high voltage and current specs, and then the DC current gain value is less.
MPSA18 transistor applications
- Output stage of the amplifier circuit
- Sensor circuits
- General-purpose switching circuits
- Detector applications
- Voice recorder circuits
- RF applications
- Preamp circuits
