- MPSA13 is an NPN silicon Darlington transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 30V
- Emitter to base voltage is 10V
- Collector current is 500mA
- Power dissipation is 625mW
- DC current gain is 5000 to 10000hFE
- Junction temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Thermal resistance is 200℃/W
MPSA13 transistor Pinout
|Current flows through the emitter
|Base terminal is the trigger for the transistor device
|Current flows through the collector
The schematic shows the Darlington transistor, they are been at two types PNP and NPN, MPSA13 is an NPN Darlington transistor device.
The connection of the Darlington transistor is connecting two NPN or PNP transistors back to back, which is the output of one transistor towards another transistor input.
The Darlington pair transistor had a higher gain than the normal transistors, due to the back-to-back connection between two transistors.
MPSA13 transistor package
The MPSA13 Darlington transistors have a TO-92 package, most of the time TO-92 is used for general-purpose devices.
The TO-92 package is made with epoxy/plastic material for heat resistance and compactness as an electronic component.
The less-weight TO-92 package will support the MPSA13 transistor by making small circuits like touch sensors.
Marking the case
The marking of this transistor is “MPSA13” on the case
MPSA13 transistor electrical specification description
In this section, we try to describe the electrical specifications of the MPSA13 transistor device.
This electrical specs explanation is really helpful for a better understanding of this transistor and it will help us with the replacement process.
The terminal voltage specs of MPSA13 transistor are collector to emitter and collector to base voltage is 30V and emitter to base voltage is 10V, this shows it is low power Darlington transistor device.
The collector to emitter saturation voltage is 1.5V, and the saturation voltage is region switching of the transistor.
Overall voltage specifications of the MPSA13 transistor show that it is a low voltage device that has more applications.
The collector current value of the MPSA13 transistor is 500mA, it is the current load capacity of the transistor device.
The MPSA13 transistor has low current specs, so this will very useful for display driving and sensor applications.
The power dissipation at the MPSA13 transistor is 625mW, the device dissipation mainly depends on the transistor package and overall capacity.
Current gain specs
The current gain value of MPSA13 is 5000 to 10000hFE, the DC current value shows that it is capable of amplifier and driver applications.
The DC current gain value of MPSA13 is higher, this is why MPSA13 transistors are been used in POWER amplifier applications with low voltage and currents.
The junction temperature of -65 to 150℃, and the MPSA13 is a power transistor.
The thermal resistance of the MPSA13 transistor ambient is 200℃/W
MPSA13 Darlington transistor DATASHEET
If you need the datasheet in pdf please click this link
The MPSA13 transistor had equivalent devices such as 2SC982, 2N5525, KSP14, MPSW13, MPSW45, and 2N5306.
All of these transistors are Darlington pair transistor devices that had the same electrical specifications, so this is why we can use them as the equivalent for the MPSA13 transistor.
The high DC current gain is the specialty of the MPSA13 transistor, so replacing it with another device is a difficult task.
MPSA13 transistor complementary
The MPSA13 NPN transistor had a complimentary pair MPSA63 PNP transistor, the electrical specifications of both are the same.
MPSA13 transistor SMD version
The SMD transistors such as KST13 (SOT-23), MMBTA13 (SOT-23), PMBTA13 (SOT-23), PZTA13 (SOT-223) and PZTA13 (SOT-223) are the SMD equivalent transistor of MPSA13.
MPSA13 vs 2N3904 vs MPSA18
In the table below, we try to list the electrical specifications of MPSA13, 2N3904, and MPSA18 transistors.
This electrical specification listing will be helpful in the replacement process of the MPSA13 transistor.
Characteristics MPSA13 2N3904 MPSA18
Collector to base voltage (VCB) 30V 60V 45V
Collector to emitter voltage (VCE) 30V 40V 45V
Emitter to base voltage (VEB) 10V 6V 6.5V
Collector to emitter saturation voltage (VCE (SAT)) 1.5V 0.2 to 0.3V -
Collector current (IC) 500mA 200mA 200mA
Power dissipation 625mW 625mW 625mW
Junction temperature (TJ) -55 to +150°C -55 to +150°C -55 to +150°C
Thermal resistance 200℃/W 200℃/W 200℃/W
Transition frequency (FT) 125MHz 300MHZ 100 to 160MHz
Noise figure - 5dB 1.5dB
Gain (hFE) 5000 to 10000hFE 30 to 300hFE 100 to 160hFE
Package TO-92 TO-92 TO-92
MPSA13 Darlington transistor applications
- Output stage of the amplifier circuit
- Touch sensors
- Power regulators
- Display drivers
- High gain applications
MPSA13 transistor characteristics curves
The figure shows the DC current gain characteristics of the MPSA13 transistor, the graph is plotted with DC current gain vs collector current.
At the fixed collector to emitter voltage, the DC current gain value increases with respect to collector current.
As when the junction temperature increases, the DC current gain increases and drops at the end.
The figure shows the collector saturation region characteristics of the MPSA13 transistor, the graph is plotted with the collector to emitter voltage vs base current.