MPSA06 transistor electrical specification
- MPSA06 is a silicon general-purpose NPN transistor device
- Collector to emitter voltage is 80V
- Collector to base voltage is 80V
- The emitter to base voltage is 4V
- Collector current is 500mA
- Power dissipation is 625mW
- DC current gain is 100hFE
- Junction temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is25V
- Transition frequency is 100MHz
- Thermal resistance is 200℃/W
- Low power output
- Amplifier transistor
MPSA06 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter|
|2||Base||Base terminal is the trigger for the transistor|
|3||Collector||Current flows through the collector|
MPSA06 transistor package
The MPSA06 transistor device had a TO-92 package, it is commonly known as the general-purpose device package.
The TO-92 package is made with epoxy/plastic materials for heat resistance properties and also these materials will offer more compactness with lite weight.
MPSA06 transistor is a general-purpose device having applications in small circuits, so the TO-92 package is correct as an electronic component.
MPSA06 transistor electrical specification description
In this block, we try to explain the electrical specifications of the MPSA06 transistor device.
Main electrical description will help us to know more about the device and it is really helpful for the replacement process.
The voltage specifications of the MPSA06 transistor are collector to emitter voltage is 80V, collector to base voltage is 80V, and emitter to base voltage is 4V.
The collector to emitter saturation voltage value is 0.25V, it is the range switching voltage of the device.
Overall voltage specs of the MPSA06 transistor show that it is a transistor device which having more project-based applications.
The collector current value of the MPSA06 transistor is 500mA, and the load capacity of the transistor device is under 0.5A.
This is the reason why the MPSA06 transistor had applications at low switching applications.
The power dissipation value of the MPSA06 transistor is 625mW, the dissipation value of the device mainly depends on the package.
DC current gain specs
The DC current gain value of the MPSA06 transistor is 100Hfe, and the amplification capacity of this device is low
The junction temperature of -55 to 150℃, and the MPSA06 is a general-purpose transistor.
The thermal resistance of the MPSA06 transistor ambient is 200℃/W
MPSA06 transistor DATASHEET
If you need the datasheet in pdf please click this link
MPSA06 transistor equivalent
The MPSA06 transistor had equivalent devices such as MPSA29, MPSA28, MPS8099, ZTX455, 2N7051, 2SC4145, BC538, 2N5830, and 2N4401. These transistors had the same electrical specifications as MPSA06.
We can easily replace the MPSA06 transistor with these devices and we need to check the PINOUT details before the replacement process.
MPSA06 complementary transistor
The MPSA06 is an NPN transistor, so it had the MPSA56 PNP complementary transistor.
So we can use these transistors to make Darlington pair and push-pull network at the circuits.
SMD versions of MPSA06 transistor
The SMD transistors such as 2SC2882Y (SOT-89), 2SC4209Y (SOT-23), PMBTA06 (SOT-23), and PZTA06 (SOT-223) are the SMD equivalents of MPSA06 transistor. The power dissipation value of these transistors is different from the MPSA06, other than that all the electrical specifications are the same.
MPSA06 vs BC538 vs MPS8099
In the table below, we list and compare the electrical specifications of MPSA06, BC538, and MPS8099 transistors. This comparison table is really helpful for a better understanding.
|Collector to base voltage (VCB)||80V||80V||80V|
|Collector to emitter voltage (VCE)||80V||80V||80V|
|Emitter to base voltage (VEB)||4V||6V||6V|
|Collector to emitter saturation voltage (VCE (SAT))||0.25V||0.7 to 1.5V||0.3 to 0.4V|
|Collector current (IC)||500mA||1A||500mA|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C||-55 to +150°C|
|Transition frequency (FT)||100MHz||120MHZ||150MHz|
|Gain (hFE)||100hFE||40 to 400hFE||100 to 400hFE|
Each of the transistors in this list had almost the same electrical specifications, we can use them as the equivalent.
MPSA06 transistor applications
- Medium power driver applications
- General-purpose switching applications
- Class B amplifier circuits
- Preamp circuits
- Push-pull amplifier circuits
- Telecommunication system applications
- Radiofrequency applications
- Signal amplifier applications
Characteristics curves of MPSA06 transistors
The figure shows the DC current gain characteristics of the MPSA06 transistor, the graph is plotted with DC current gain vs collector current.
At three different temperature ranges and fixed collector to an emitter voltage value, the DC current gain value graph starts from a high value at 125℃ with respect to collector current. Then the gain value dips at the end.
The figure shows the safe operating area characteristics of the MPSA06 transistor, the graph is plotted with different quantities such as collector current, collector to emitter voltage, temperature ranges, and switching speed.
The graphical representation will indicate the operation range of the MPSA06 transistor with these quantities indicates.