- MPF102 N-channel depletion type JFET device
- Drain to source voltage (VDS) is 25V
- Drain to gate voltage (VDG) is 25V
- Gate to source voltage (VGS) is -0.5 to -7.5V
- Gate to source cutoff voltage (VGS (OFF)) is -8.0V
- Drain gate forward current (IGF) is 10mA
- Power dissipation is (PD) is 350mW
- Junction temperature (TJ) is between -65 to 150℃
- Forward transfer admittance (YFS) is 1600 to 7500umhos
- Input capacitance is 7pF
- VHF amplifier device
- Low power amplifier
- Low noise
- High gain
|Pin Number||Pin Name||Description|
|1||Drain||The drain terminal is the current inlet of the JFET device|
|2||Source||In the source, terminal current flows out from the JFET|
|3||Gate||The gate terminal is used to trigger the JFET transistor.|
MPF102 JFET package
The MPF102 n-channel JFET device has a TO-92 package, it is commonly known as the low power general purpose package.
TO-92 package is a three-terminal device made with epoxy/plastic material, this will make them more heat resistant and compact.
The small-sized and less weighted MPF102 JFET TO-92 package is much more useful for making compact circuits.
MPF102 n-channel JFET electrical specification description
In this section, we try to explain the electrical specifications of the MPF102 n-channel JFET transistor.
The voltage specs of MPF102 n-channel are a drain to source voltage is 25V, the gate to source voltage is -25V, and the gate to source voltage is -0.5 to -7.5V.
The gate to source cutoff voltage is -8.0V, this is the cutoff voltage value of MPF102 n-channel JFET.
Overall voltage value shows that they have low voltage specifications and which has low power applications.
The forward gate current value of MPF102 JFET is 10mA, this is the maximum load capacity of the device.
The power dissipation is 350mW for the MPF102 n-channel JFET device.
Junction temperature/ storage temperature
The junction temperature/storage temperature of MPF102 JFET is -65 to +150℃.
The input capacitance of MPF102 JFET is 7pF.
If you need the datasheet in pdf please click this link
The MPF102 n-channel JFET device equivalents such as NTE457, J113, 2N4416, 2N5457, BF245B, 2N5458, 2N5640, and BF245C. Each of these devices has almost similar electrical specifications, so we can easily replace them at the place of MPF102 JFET.
Check and verify the PINOUT details of the JFET device before the replacement process, because rewiring them is very dangerous at the circuit level.
MPF102 vs 2N5457 vs J201
In the table below we try to compare the electrical specifications of MPF102, 2N5457, and J201 JFET devices, this comparison is really helpful for the replacement process.
|Drain to source voltage (VDS)||25V||25V||40V|
|Gate to source cutoff voltage (VGS(OFF))||-8.0V||-0.5 to 6.0V||-0.8 to -4.0V|
|Gate to source voltage (VGS)||-25V||-25V||-40V|
|Gate forward current (IG)||10mA||10mA||50mA|
|Gate to source voltage||-0.5 to -7.5V||-2.5V||-|
|Power dissipation (PD)||350mW||310mW||625mW|
|Junction temperature (TJ)||-65 to 150°C||-65 to 150°C||-55 to 150°C|
|Forward transfer admittance (Yfs)||1600 to 7500umhos||1000 to 5000umhos||1000umhos|
|Input capacitance||7pF||4.5 to 7pF||-|
Characteristics curves of MPF102 n-channel JFET
The figures show the effect of noise figure characteristics of MPF102 JFET, the graph plots with noise figure vs drain current.
At fixed voltage values, at two different frequency values production of noise is low at low frequency with respect to drain current.
The figure shows the power gain characteristics of MPF102 n-channel JFET, the graph is plotted with power gain vs drain current.
At fixed voltage and temperature values, and different frequency value, gain production is high at low-frequency signals.
Applications of MPF102 n-channel JFET transistor
- Amplifier circuit
- Preamp circuit
- Noise cancellation amplifier
- Low-level signal amplifier
- Sensor circuit
- Impedance detector circuit
- Audio mixing circuit
- VHF signal amplifier circuit