MPF102 JFET

MPF102 JFET
MPF102 JFET

MPF102 specification

  • MPF102 N-channel depletion type JFET device
  • Drain to source voltage (VDS) is 25V
  • Drain to gate voltage (VDG) is 25V
  • Gate to source voltage (VGS) is -0.5 to -7.5V
  • Gate to source cutoff voltage (VGS (OFF)) is -8.0V
  • Drain gate forward current (IGF) is 10mA
  • Power dissipation is (PD) is 350mW
  • Junction temperature (TJ) is between -65 to 150℃
  • Forward transfer admittance (YFS) is 1600 to 7500umhos
  • Input capacitance is 7pF
  • VHF amplifier device
  • Low power amplifier
  • Low noise
  • High gain

MPF102 PINOUT

MPF102 PINOUT
MPF102 PINOUT
Pin Number Pin Name Description
1 Drain   The drain terminal is the current inlet of the JFET device
2 Source In the source, terminal current flows out from the JFET 
3 Gate The gate terminal is used to trigger the JFET transistor.

 

MPF102 JFET package

The MPF102 n-channel JFET device has a TO-92 package, it is commonly known as the low power general purpose package.

TO-92 package is a three-terminal device made with epoxy/plastic material, this will make them more heat resistant and compact.

The small-sized and less weighted MPF102 JFET TO-92 package is much more useful for making compact circuits.

MPF102 n-channel JFET electrical specification description

In this section, we try to explain the electrical specifications of the MPF102 n-channel JFET transistor.

Voltage specs

The voltage specs of MPF102 n-channel are a drain to source voltage is 25V, the gate to source voltage is -25V, and the gate to source voltage is -0.5 to -7.5V.

The gate to source cutoff voltage is -8.0V, this is the cutoff voltage value of MPF102 n-channel JFET.

Overall voltage value shows that they have low voltage specifications and which has low power applications.

Current specs

The forward gate current value of MPF102 JFET is 10mA, this is the maximum load capacity of the device.

Dissipation specs

The power dissipation is 350mW for the MPF102 n-channel JFET device.

Junction temperature/ storage temperature

The junction temperature/storage temperature of MPF102 JFET is -65 to +150℃.

Input capacitance

The input capacitance of MPF102 JFET is 7pF.

MPF102 DATASHEET

If you need the datasheet in pdf please click this link

MPF102 EQUIVALENT

The MPF102 n-channel JFET device equivalents such as NTE457, J113, 2N4416, 2N5457, BF245B, 2N5458, 2N5640, and BF245C. Each of these devices has almost similar electrical specifications, so we can easily replace them at the place of MPF102 JFET.

Check and verify the PINOUT details of the JFET device before the replacement process, because rewiring them is very dangerous at the circuit level.

MPF102 vs 2N5457 vs J201

In the table below we try to compare the electrical specifications of MPF102, 2N5457, and J201 JFET devices, this comparison is really helpful for the replacement process.

CharacteristicsMPF1022N5457J201
 Drain to source voltage (VDS)25V25V40V
Gate to source cutoff voltage (VGS(OFF))-8.0V-0.5 to 6.0V-0.8 to -4.0V
 Gate to source  voltage (V­GS)-25V-25V-40V
Gate forward current (IG)10mA      10mA      50mA
Gate to source voltage-0.5 to -7.5V       -2.5V-
Power dissipation (PD)350mW 310mW625mW
Junction temperature (TJ)-65 to 150°C-65 to 150°C -55 to 150°C
Forward transfer admittance (Yfs)1600 to 7500umhos1000 to 5000umhos1000umhos
Input capacitance7pF4.5 to 7pF-
PackageTO-92TO-92      TO-92

Characteristics curves of MPF102 n-channel JFET 

effect of noise figure characteristics of MPF102
effect of noise figure characteristics of MPF102

The figures show the effect of noise figure characteristics of MPF102 JFET, the graph plots with noise figure vs drain current.

At fixed voltage values, at two different frequency values production of noise is low at low frequency with respect to drain current.

power gain characteristics of MPF102 n-channel JFET
power gain characteristics of MPF102 n-channel JFET

The figure shows the power gain characteristics of MPF102 n-channel JFET, the graph is plotted with power gain vs drain current.

At fixed voltage and temperature values, and different frequency value, gain production is high at low-frequency signals.

Applications of MPF102 n-channel JFET transistor

  • Amplifier circuit
  • Preamp circuit
  • Noise cancellation amplifier
  • Low-level signal amplifier
  • Sensor circuit
  • Impedance detector circuit
  • Audio mixing circuit
  • VHF signal amplifier circuit

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