MMBT3904 transistor
MMBT3904 SMD transistor electrical specification
- MMBT3904 epitaxial planer NPN SMD transistor device
- Collector to emitter voltage is 40V
- Collector to base voltage is 60V
- Emitter to base voltage is 6V
- Collector current is 200mA
- Power dissipation is 310mW
- DC current gain is 30 to 300hFE
- Small signal current gain is 100 to 400hFE
- Current gain-bandwidth (FT) is 300MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is20 to 0.30V
- Thermal resistance is 403℃/W
- Noise figure (NF) is 5dB
- Rise time (tr) is 35ns
MMBT3904 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current start flows from the emitter, it is the input of the transistor |
| 2 | Base | The base is the trigger for the transistor |
| 3 | Collector | Current flows through the collector |
MMBT3904 SMD transistor package
The SMD transistor MMBT3904 has a SOT-23 package, it is a surface mount medium power transistor package.
It is a three-terminal package made with epoxy/plastic material, the material used will be very helpful to resist higher temperature values.
The applications such as audio systems use MMBT3904 SMD transistor, the SOT-23 component packaging will support such circuit applications.
Marking the case
The MMBT3904 SMD/ SMT transistor case marks them as BT3904
MMBT3904 SMD transistor electrical specification description
In this section, we try to descript the electrical specifications of the MMBT3904 transistor with its application notes.
Voltage specs
The voltage specs of the MMBT3904 transistor are collector to base voltage is 60v, collector to emitter voltage is 40v and emitter to base voltage is 6v, this transistor had medium voltage values.
The collector to emitter saturation voltage is from 0.20 to 0.30V, it is the switching voltage of the transistor.
Current specs
The collector current value of the MMBT3904 transistor is 200mA, it is the lowest load value useful for driver applications.
Dissipation specs
The power dissipation value of the MMBT3904 SMD transistor is 310W, it is a moderate value of dissipation.
Current gain specs
The current gain value is between (30 to 300), and the gain value is important for amplifier applications.
The small-signal current gain value of the SMD transistor is 100 to 400hFE, this value is important for SMD circuit applications.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the MMBT3904 SMD transistor is 300MHz, the frequency range shows the amplifier circuit limits.
Junction temperature
The junction temperature of -55 to 150℃, which is a general-purpose transistor temperature value of capacity.
Noise figure
The maximum noise value of the MMBT3904 SMD transistor is 5dB, which is very important for amplifier applications.
Thermal resistance
The thermal resistance of the MMBT3904 SMD transistor case is 403℃/W
MMBT3904 SMD transistor DATASHEET
If you need the datasheet in pdf please click this link
MMBT3904 SMD/SMT transistor equivalent
The MMBT3904 SMD transistor had equivalent devices such as FMMT2222A, MMBT3904LT1G, MMBT4401, MMBTA05, and MMBTA06.
Most of the SMD transistor equivalents have almost the same electrical specs, this is the reason why we can easily replace them.
SMD or SMT transistor device had to check the power dissipation and packaging details, it is very important for the replacement process.
MMBT3904 vs MMBT4401 vs MMBT100
In this table we try to list the electrical specs of each MMBT3904 vs MMBT4401 vs MMBT100, this comparison will be really helpful for replacement.
| Characteristics | MMBT3904 | MMBT4401 | MMBT100 |
|---|---|---|---|
| Collector to base voltage (VCB) | 60V | 60V | 75V |
| Collector to emitter voltage (VCE) | 40V | 40V | 45V |
| Emitter to base voltage (VEB) | 6V | 6V | 6V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.20 to 0.30V | 0.73V | 0.4V |
| Collector current (IC) | 200mA | 0.6A | 500mA |
| Power dissipation | 310mW | 0.35W | 350mW |
| Junction temperature (TJ) | -55 to +150°C | 150°C | 150°C |
| Transition frequency (FT) | 300MHZ | 250MHZ | 250MHZ |
| Gain (hFE) | 30 to 300hFE | 100 to 300hFE | 80 to 450hFE |
| Small signal current gain | 100 to 400hFE | 40 to 500hFE | - |
| Rise time (tr) | 35ns | 20ns | - |
| Noise figure (NF) | 5dB | - | 5dB |
| Package | SOT-23 | SOT-23 | SOT-23 |
The terminal voltage specs of each transistor are the same, the saturation voltage is considered as the switching of the transistor from one state to another, this value is slightly different for each of these SMD transistors.
The amplification quantities such as current gain, transition frequency, and noise frequency will be almost the same, this shows that we can use each of these three SMD transistors as the equivalents.
MMBT3904 SMD transistor Complementary
The MMBT3904 is the PNP SMD complementary for the MMBT3904 NPN transistor, the combination of these two transistors will be used for some applications.
MMBT3904 SMD/ SMT transistor applications
- Relay drivers
- LED drivers
- Motor drivers
- Amplifier modules
- Signal amplifier modules
- Used in TV and home appliance applications
MMBT3904 SMD transistor characteristics
The figure shows the DC current gain vs collector current characteristics, at these characteristics temperature capacity of the device, had a major role to play.
At a constant collector to emitter voltage, the current gain of the device will start at a certain limit and decreases at the end.
The collector current starts to increase till the time device started and then reaches the maximum limit.
The figure shows the collector to emitter saturation voltage vs collector current characteristics, the graph plotted an inverted parabolic shape for these characteristics.
This means both the collector to emitter saturation voltage and collector current started low and also they start increasing after a slight time gap.
