MJE340 transistor electrical specification
- MJE340 is a silicon planer NPN transistor device
- Collector to emitter voltage is 300V
- Collector to base voltage is 300V
- Emitter to base voltage is 3V
- Collector current is 5A
- Power dissipation is 8W
- DC current gain is 30 to 240hFE
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Thermal resistance is 6℃/W
- High voltage general purpose transistor
- Medium power device
- Suitable for transformer-less
- Line operated equipment
- Thermo-pad construction provides a high power dissipation rating for high reliability
MJE340 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter|
|2||Collector||Current flows through the collector|
|3||Base||It is used to trigger the transistor device|
MJE340 transistor package
The MJE340 transistor has a TO-225 package, it is a transistor package mainly used for POWER applications.
The TO-225 package is made of epoxy/plastic material which is good for heat resistance properties then it is more compact and less weight.
The TO-225 packages are been mainly used for medium power application devices, so this is the reason for the provision of a through-hole for heat sink attachment.
MJE340 transistor electrical specification description
In this section, we try to explain the electrical specifications of the MJE340 transistor device, which is very useful for a better understanding of this device.
The voltage specs of MJE340 transistor are collector to emitter voltage is 300V, collector to base voltage is 300V and emitter to base voltage is 3V, the terminal voltage shows it is medium power device.
The collector to emitter saturation voltage is 0.5V, the saturation voltage shows the region switching voltage.
Overall voltage specifications of the MJE340 transistor show that it is a medium power device mainly used for power supply and power switching applications.
The collector current value of the MJE340 transistor is 0.5A, the current value shows the load capacity of this transistor is under 0.5amps.
The current specifications of the MJE340 transistor indicate that it is more capable of driver applications.
The power dissipation of the MJE340 transistor is 20.8W, the dissipation value mainly depends on the transistor package.
DC current gain specs
The DC current gain value of the MJE340 transistor is 30 to 240hFE, this transistor is a low-power amplifier application.
The junction temperature of -65 to 150℃, and the MJE340 is a medium-power transistor device.
The thermal resistance of the MJE340 transistor device case is 6℃/W
MJE340 transistor DATASHEET
If you need the datasheet in pdf please click this link
MJE340 transistor equivalent
The MJE340 had equivalent transistors such as 2N5656, BD128, BD158, BD410, 2N6175, 2N6557, BD127, NSD132, 2SC2068 and 2SD668.
Each of these transistor devices had almost the same electrical specifications, so we can use them as the replacement for the circuits.
MJE340 complementary transistor
The MJE340 NPN transistor had a complimentary pair PNP transistor MJE350, both these transistors had the same and opposite electrical specifications, so we can use them as the Darlington pair or push-pull pair at the circuits.
MJE340 vs BD139 vs TIP41
In the table below, we list the electrical specifications of MJE340, BD139, and TIP41 transistors for a comparison of the device.
|Collector to base voltage (VCB)||300V||80V||40V|
|Collector to emitter voltage (VCE)||300V||80V||40V|
|Emitter to base voltage (VEB)||3V||5V||5V|
|Collector to emitter saturation voltage (VCE (SAT))||0.5V||0.5V||1.5V|
|Collector current (IC)||0.5A||1.5A||6A|
|Junction temperature (TJ)||-65 to +150°C||-65 to +150°C||-65 to +150°C|
|Transition frequency (FT)||-||-||3MHz|
|Gain (hFE)||30 to 240hFE||25 to 250hFE||15 to 75hFE|
MJE340 transistor applications
- Linear and switching industrial equipment
- Linear power supplies
- Inverter circuits
- UPS circuits
- Battery charger circuits
- Motor controller circuits
- DC high voltage switching