MJE3055T transistor
MJE3055T specification
- MJE3055T is a silicon NPN transistor device
- Collector to emitter voltage is 60V
- Collector to base voltage is 70V
- Emitter to base voltage is 5V
- Collector current is 10A
- Base current is 6A
- Power dissipation is 75W
- DC current gain is 20 to 100hFE
- Junction temperature is between -55 to +150℃
- Thermal resistance, junction to the case is 66℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is1 to 8V
- Transition frequency is 2MHz
- High current gain
MJE3055T Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base terminal is used to trigger the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
MJE3055T NPN transistor package
The MJE3055T NPN transistor has a TO-220 device package, it is a moderate power three-terminal device.
TO-220 is a bulkier through-hole package made with epoxy/plastic material for temperature withstanding ability. The backside of the TO-220 package is coated with metallic material, this will help to transfer the heat towards the heat sink when we attach it with them.
MJE3055T NPN transistor electrical specification description
In this section, we try to explain the electrical specifications of the MJE3055T transistor device. This description will give us an idea about the device.
Voltage specs
The voltage specs of the MJE3055T NPN transistor are collector to base voltage is 70V, collector to emitter voltage is 60V, and emitter to base voltage is 5V.
The collector to emitter saturation voltage is 1.1V to 8V, it is the voltage range of the terminals at the stage of saturation.
Overall voltage specifications of the MJE3055T transistor show that it is a moderate voltage device having different applications.
Current specs
The collector current value of the MJE3055T transistor is 10A, the current value indicates the device maximum load capacity.
The base current value is 6A, it is the recombination of electrons and holes at the semiconductor device material.
The current values of the MJE3055T transistor indicate that it is a higher current device having applications like power supply-based and regulator based.
Dissipation specs
The power dissipation value of the MJE3055T transistor is 75W, when we consider the product of voltage and current, it is naturally high so this is why MJE3055T has many power supply applications.
DC current gain specs
The DC current gain value of the MJE3055T transistor is 20 to 100hFE
Junction temperature
The junction temperature of -65 to 150℃, and the MJE3055T transistor is a moderate power device.
Thermal resistance
The thermal resistance of the MJE3055T transistor device case is 1.66℃/W
Transition frequency
The transition frequency value of MJE3055T is 2MHz, this value indicates the frequency range of the device.
MJE3055T NPN transistor DATASHEET
If you need the datasheet in pdf please click this link
MJE3055T equivalent
The MJE3055T transistor has equivalent devices such as 2N6673, 2N6675, BD911, BDT95, BD711, 2N6487, and BD707, each of these transistors are identical once and electrical specifications are almost similar to the MJE3055T transistor, so we can them as the replacement for the MJE3055T device.
At the circuit level, we need to consider the electrical specifications such as voltage, current, and PINOUT details to become the replacement process of the MJE3055T transistor.
Complimentary of MJE3055T NPN transistor
The MJE3055T transistor has an MJE2955T PNP complimentary device, the electrical specifications of both these transistors are the same and opposite, so we can use them in complimentary pair circuit applications.
MJE3055T vs 2N3055
In the table below, we listed the electrical specifications of both MJE3055T and 2N3055 transistors, the comparison of specs will help us to know more about these devices for circuit-level applications.
| Characteristics | MJE3055T | 2N3055 |
|---|---|---|
| Collector to base voltage (VCB) | 70V | 100V |
| Collector to emitter voltage (VCE) | 60V | 100V |
| Emitter to base voltage (VEB) | 5V | 7V |
| Collector to emitter saturation voltage (VCE (SAT)) | 1.1 to 8V | 1.1 to 3V |
| Collector current (IC) | 10A | 15A |
| Base current (IB) | 6A | 7A |
| Power dissipation | 75W | 115W |
| Junction temperature (TJ) | -55 to +150°C | -65 to +200°C |
| Thermal resistance | 1.66℃/W | - |
| Transition frequency (FT) | 2MHz | 2.5MHz |
| Gain (hFE) | 20 to 100hFE | 20 to 70hFE |
| Package | TO-220 | TO-3 |
MJE3055T NPN transistor applications
- Power supply circuit applications
- Amplifier circuits
- PMW circuit applications
- Regulator circuit applications
- SMPS circuits
- Signal amplifier
Characteristics curves of MJE3055T transistor
The figure shows the DC current gain characteristics of the MJE3055T transistor, the graph plots with dc current gain vs collector current.
At constant collector to emitter voltage, the DC current gain increases from a higher value, and a slight increase will show after the device starts working then it dips at the end.
The figure shows the safe operating area characteristics of the MJE3055T transistor, the graph plots with collector current vs collector to emitter voltage and switching speed.
