MJE2955T transistor electrical specification
- MJE2955T is a silicon PNP plastic POWER transistor device
- Collector to emitter voltage is –60V
- Collector to base voltage is –70V
- Emitter to base voltage is –5V
- Collector current is –10A
- Base current is –6A
- Power dissipation is 75W
- DC current gain is 20 to 100hFE
- Junction temperature is between -55 to +150℃
- Thermal resistance, junction to the case is 67℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is -1.1 to -8V
- Transition frequency is 2MHz
- High current gain
|Pin Number||Pin Name||Description|
|1||Base||Base terminal is used to trigger the transistor|
|2||Collector||Current flows through the collector|
|3||Emitter||Current flows through the emitter|
MJE2955T transistor package
MJE2955T PNP transistor device has a TO-220 device package, it is a higher power transistor.
TO-220 is a three-terminal through-hole transistor package made of epoxy/plastic material which is had a high-temperature capacity and is a less-weight material.
TO-220 transistor package back portion is coated with metal material which is used to attach the heat sink with it for heat transfer.
MJE2955T transistor electrical specification description
Here we explain the important electrical specifications of the MJE2955T transistor, this explanation is really helpful for a better understanding of the transistor device.
The voltage specs of the MJE2955T transistor are collector to emitter voltage is 60V, collector to base voltage is 70V, and emitter to base voltage is 5V.
The collector to emitter saturation voltage of MJE2955T transistor is 1.4V, it is the difference between collector & emitter voltages and base voltage.
Overall voltage specifications of the MJE2955T transistor indicate that it is a high-voltage power transistor.
The collector current value of the MJE2955T transistor is 10A, this transistor had a higher load capacity.
The base current value of the MJE2955T transistor is 6A, it is the current value that indicates the triggering.
The current specifications of the MJE2955T transistor indicate that it had a higher current capacity for works at switching applications.
The power dissipation value of the MJE2955T transistor is 75W, the dissipation ability of the semiconductor is mainly dependent on the package and it is the whole product of voltage and the current value of the device.
DC current gain specs
The DC current gain value of the MJE2955T transistor is 20 to 100hFE, the gain value of the device shows the amplification capacity of the transistor.
Junction temperature/ operating temperature
The junction temperature and operating temperature of the MJE2955T transistor are -55 to +150℃.
Thermal resistance to case
The thermal resistance junction in the case of the MJE2955T transistor is 1.67℃/W.
The transition frequency value of MJE2955T is 2MHz.
MJE2955T transistor DATASHEET
If you need the datasheet in pdf please click this link
The MJE2955T transistor equivalent devices 2N6490, 2N6491, BD708, BD710, BD910, BDT94, BDT96F, and NTE183, each of these devices have an almost similar set of electrical specifications.
Before the replacement process, we need to check the specs such as PINOUT details and voltage values, because both these values are important at the circuit level.
MJE2955T complementary transistor
The MJE2955T PNP transistor has the MJE3055T NPN transistor as the complementary pair device, each of these devices has the same set of electrical specifications.
MJE2955T vs 2N6490 vs 2N5988
In the table below, we list and compare the electrical specifications of MJE2955T, 2N6490, and 2N5988, this specs comparison is really helpful for better understanding.
|Collector to base voltage (VCB)||70V||70V||80V|
|Collector to emitter voltage (VCE)||60V||60V||80V|
|Emitter to base voltage (VEB)||5V||5V||5V|
|Collector to emitter saturation voltage (VCE (SAT))||1.1 to 8V||1.3 to 3.5V||0.6V to 1.7V|
|Collector current (IC)||10A||15A||12A|
|Base current (IB)||6A||5A||4A|
|Junction temperature (TJ)||-55 to +150°C||-65 to +150°C||-65 to +150℃|
|Transition frequency (FT)||2MHz||5MHz||2MHz|
|Gain (hFE)||20 to 100hFE||5 to 150hFE||7 to 120hFE|
MJE2955T transistor applications
- Power switching circuit
- Amplifier circuit
- PWM applications
- SMPS circuit
MJE2955T transistor characteristics curves
The figure shows the DC current gain characteristics of the MJE2955T transistor, which are plots with DC current gain vs collector current.
At constant collector to an emitter voltage value, the DC current gain curve of the MJE2955T transistor is plotted at three temperature ranges.
The DC gain curve is plotted as a parabolic shape, which gains value increases at starting stage and dips at the end.
The figure shows the safe operating area characteristics of the MJE2955T transistor, the graph plots with collector current vs collector to emitter voltage and temperature range, and switching speed.