MJE13009A transistor specification
- MJE13009 is an NPN power transistor type
- Collector to emitter voltage is 400V
- Collector to base voltage is 700V
- Emitter to base voltage is 9V
- Collector current is 12A
- Base current is 6A
- Collector cutoff current (ICE) 1 to 5mA
- Power dissipation is 7 to 640mW/ ℃
- DC current gain is 8 to 40hFE
- Transition frequency (FT) is 4MHz
- Junction temperature is between –55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1 to 3V
- Rise time (tr) 0.45us
- High voltage devices
- High-speed power switching devices
MJE13009A transistor Pinout
|The base terminal is the trigger to the transistor
|The collector is the current inlet of the transistor
|The emitter is the current outlet of the transistor
MJE13009A transistor package
The MJE13009A transistor had two types of packages TO-3P and TO-220, both of these are power transistor packages.
The TO-3P transistor package will be made with metal and plastic/epoxy, usage of these materials will give the transistor more heat withstanding capacity, and also the metal covering at the outside portion will be used to absorb heat from the heat sink.
The TO-220 package is made with plastic and metal, this is very useful for heat withstanding.
The through-hole components are used to attach the heat sink, it is really useful for the out flow of heat.
MJE13009A transistor specification description
In this description we try to explain the MJE13009A transistor electrical specs, the description is really helpful for the applications.
The terminal voltage of MJE13009A transistor are collector to emitter voltage is 400v, collector to base voltage is 700v, and emitter to base voltage is 9v.
The voltage specs show the MJE13009A transistor is a power transistor, mainly used for switched-mode power supply systems.
The collector current value for MJE13009A is 12A, the current value shows that it is a high power transistor.
The power dissipation of MJE13009A is 0.7 to 640mW, this is the heat dissipation value of the MJE13009A transistor.
Current gain specs
The current gain value of the MJE13009A transistor is 8 to 40hFE, the amplification capability of this transistor is low.
The transition frequency is 4MHz, the transistor MJE13009A had the frequency value.
The junction temperature of -55 to +150℃.
MJE13009A transistor DATASHEET
If you need the datasheet in pdf please click this link
MJE13009A transistor equivalent
The transistor devices such as FJP13009, KSE13009, and MJE1009G are the equivalent of MJE13009A transistors.
Each of the transistors on this list had the same electrical specifications, so we can easily use them as the equivalent for MJE13009A transistor,
MJE13009A vs MJE13007
In the table, we listed the electrical specifications of MJE13009A and MJE13007 transistors, which helps make a replacement.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE(SAT))
|1 to 3V
|Collector current (IC)
|Base current (IB)
|0.7 to 640W
|Junction temperature (TJ)
|-55 to 150°C
|Thermal resistance, junction to case
|Transition frequency (FT)
|4 to 14MHZ
|Rise time (tr)
|0.5 to 1.5us
|8 to 40hFE
|5 to 40hFE
|TO-3P & TO-220
The electrical specification comparison of MJE13009A vs MJE13007 transistors gives us a clear idea about both of them.
The voltage specs of both transistors are the same, but the current values are different.
When we consider both the transistor electrical specifications, we can see that both of the transistors are good at power supply circuits.
MJE13009A transistor characteristics
The figure shows the current gain characteristics of the MJE13009A transistor, the graph is plotted with current gain vs collector current.
As we can from the graph, the current gain is dipping down when the current value increases.
The figure shows the collector saturation characteristics of the MJE13009A transistor, the graph is plotted with the collector to emitter voltage vs base current.
As we can at different base current values, the collector current increases but the collector saturation is almost the same and reaches an infinite value.
The figure shows the safe operating area characteristics of the MJE13009A transistor, the graph is plotted with collector current vs collector to emitter voltage.
Applications of MJE13009A transistor
- Motor controller
- Solenoid/relay driver
- Deflection circuit