J310 JFET specification
- J310 is an N-channel depletion-type amplifier JFET device
- Drain-to-gate voltage (VDG) is 25V
- Gate to source voltage (VGS) is –25V
- Gate to source cutoff voltage (VGS (OFF)) is -2.0 to -6.5V
- Drain gate forward current (IGF) is 10mA
- Power dissipation (PD) is 350mW
- Junction temperature/storage temperature (TJ)/ Tstg is between -65 to 150℃
- Thermal resistance of the case to ambient is 357℃/W
- Gate to source forward voltage (VGS (f)) is 1V
- Noise figure (NF) is 7dB
- Low noise amplifier device
- VHF amplifier device
- UHF amplifier device
|Pin Number||Pin Name||Description|
|1||Drain||The drain terminal is the current inlet of the JFET device|
|2||Source||In the source, terminal current flows out from the JFET|
|3||Gate||Gate terminal is the trigger for the JFET device|
J310 JFET transistor has a TO-92 device package, it is a low-power amplifier device.
TO-92 package is made of epoxy/plastic material to provide the device compactness and temperature stability, TO-92 is a three-terminal device which had applications at small amplifier circuits.
J310 specification and application explanation
In this explanation we descript the electrical specifications of the J310 JFET device, this will useful for the replacement process and a better understanding of the device.
Voltage specifications of the J310 JFET device are a drain to source voltage is 25V, the gate to source voltage is 25V, and the gate to source cutoff voltage is -2.0 to -6.5V.
Overall voltage specifications of the J310 JFET device show that it is a low-voltage semiconductor device having signal amplifier applications.
The gate forward current value of the J310 JFET device is 10mA, the current value is the maximum load capacity of the device.
The power dissipation value of J310 JFET is 350mW, this value is mainly dependent on the device package.
Junction temperature/storage temperature
The junction temperature/operating temperature value of J310 JFET is –65 to +150℃.
The thermal resistance of the case to the ambient J310 JEFT device is 357℃/W
The noise figure value of J310 JFET is 2.7Db, the noise value is an important spec for an amplifier device.
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J310 transistor EQUIVALENT
The J310 transistor have equivalent devices such as L310, J309, U310, U309, 2SK125-4 and NTE2902. Each of these devices has the same set of electrical specifications.
At the application level, we need to consider the voltage specs and current specs of the JFET device for the amplifier applications.
SMD equivalent of J310 JFET
The MMBFJ310 (SOT-23) is the SMD equivalent of the J310 JFET device, both have the same electrical specifications.
J310 vs 2SK125
In the table below we list the electrical specifications of the J310 and 2SK125 JFET devices, this listing is really useful for a better understanding of the device for the replacement process.
|Drain-to-gate voltage (VDG)||25V||35V|
|Gate to source cutoff voltage (VGS(OFF))||-2.0 to -6.5V||-2.0 to -6.0V|
|Gate to source voltage (VGS)||-25V||-35V|
|Gate forward current (IG)||10mA||ID =100mA|
|Power dissipation (PD)||350mW||300mW|
|Junction temperature (TJ)||-65 to 150°C||-50 to 120°C|
|Noise figure (NF)||2.7dB||1.8 to 2.5dB|
Graphical characteristics curves of J310 JFET
The figures show common drain-source characteristics of J310 JFET, the graph plots with drain current vs drain to source voltage.
At the constant gate-to-source cutoff voltages, the gate-to-source voltage value plots at different levels.
The graphs increase from the lowest value towards a constantly increasing value.
The figure shows the noise voltage vs frequency characteristics of J310 JFET, and the graph plots noise voltage vs frequency.
At two drain current values and constant drain-to-gate voltage values, the noise voltage starts to decrease from a particular value.
Applications of J310 transistor
- VHF amplifier circuit
- UHF amplifier circuit
- Oscillator circuit
- Mixer circuit
- Signal amplifier circuit