J113 JFET specs

  • J113 is an N-channel switch JFET transistor device
  • Drain to gate voltage (VDG) is 35V
  • Gate to source voltage (VGS) is –35V
  • Gate to source cutoff voltage (VGS (OFF)) is -0.5 to -3.0V
  • Drain gate forward current (IGF) is 50mA
  • Power dissipation is (PD) is 625mW
  • Zero gate voltage drain current (IDSS) is 2mA
  • Junction temperature (TJ) is between -55 to 150℃
  • Thermal resistance of the case is 125℃/W
  • ON-state resistance (RDS (ON)) is 100Ω
  • Low-level analog switching device
  • Source & drain are interchangeable


Pin Number Pin Name Description
1 Drain   The drain terminal is the current inlet of the JFET device
2 Source In the source, terminal current flows out from the JFET 
3 Gate Gate terminal is the trigger for the device


J113 JFET package

The J113 JFET switching device is a low-power transistor having TO-92 as the package.

TO-92 is a three-terminal semiconductor device package, it is made of epoxy/plastic material which will provide high temperature withstanding capacity within a less weight component covering.

Most of the time TO-92 package is used for general-purpose device, the compactness of the package make it a JFET device used for many small and big applications.

J113 JFET electrical specification and application description

Here in this explanation, we explain the electrical specifications of the J113 JFET device, this description is very useful for a better understanding and helps us with the replacement process.

Voltage specs

The voltage specs of the J113 JFET transistor are a drain-to-gate voltage is 35V, a gate-to-source voltage is -35V, and the gate-to-source cutoff voltage value is -0.5 to -3.0V.

The voltage specifications of the J113 JFET transistor show that it is a low-voltage device having many samples and hold circuit applications.

Current specs

The forward gate current value of the J113 JFET transistor is 50mA, it is the maximum load capacity of the device.

Zero gates voltage drain current

The zero gate voltage drain current value is 2mA, it is current flows when voltage is been zero, and it is a better value as a semiconductor device.

Dissipation specs

The power dissipation is 625Mw for the J113 transistor, it is the product of voltage and current at the device.

Junction temperature

The junction temperature of the J113 transistor is55 to +150℃.

ON-state resistance

The J113 JFET has a 100Ω resistance value, it is the semiconductor device resistance.

J113 transistor DATASHEET

If you need the datasheet in pdf please click this link

J113 transistor EQUIVALENT

The J113 transistor has equivalent devices such as J111, J112, 2N4416, J201, J203, NTE312, 2N4341, and 2N5457, each of these JFET devices has the same set of electrical specifications which is correct for the replacement process.

The voltage values, on-state resistance value, and PINOUT details is been checked and verified before the replacement process.

J113 transistor equivalent

The MMBFJ113 (SOT-23) SMD transistor is the SMD version device of the J113 transistor, the power dissipation and thermal resistance value of this JFET are different.

J113 vs J201 vs 2N4416

In this table comparison, we listed the electrical specifications of J113, J201, and 2N4416 JFET devices, this comparison is really helpful for the replacement process.

 Drain to gate voltage (VDG)35V40V30V
Gate to source cutoff voltage (VGS(OFF))-0.5 to -3.0V-0.3 to -1.5V-3 to -6V
 Gate to source  voltage (V­GS)-35V-40V-30V
Gate forward current (IG)50mA     50mA      10mA
Zero gate voltage drain current (IDSS)2mA0.2 to 1.0mA-5 to 15mA
Power dissipation (PD)625mW625mW300mW
Thermal resistance125℃/W83.3℃/W-
Junction temperature (TJ)-55 to 150°C-55 to 150°C -65 to 200°C
On-state resistance100Ω-150Ω
PackageTO-92TO-92  TO-206AF

J113 JFET graphical characteristics  

show the static characteristics of the J113 JFET
show the static characteristics of the J113 JFET

The figures show the static characteristics of the J113 JFET device, the graph plots with drain current vs drain to source voltage.

At the constant gate to source cutoff voltage, the static curves are been plots at the different gate to source voltage.

on-state vs drain current characteristics of the J113
on-state vs drain current characteristics of the J113

The figure shows the on-state vs drain current characteristics of the J113 JFET device.

At the different gates to source cutoff voltage value, the on-state resistance value increases with decreases in voltage value

J113 application

  • Hold and sample circuit applications
  • Chopper stabilized amplifier
  • Preamp circuit
  • High gain amplifier
  • Detector circuit
  • Analog switching circuit
  • Current limiter circuit

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