IRLZ44N POWER MOSFET
IRLZ44N MOSFET specification
- IRLZ44N is an N-channel silicon POWER MOSFET transistor device
- Drain to source voltage (V DS) is -55V
- Gate to source voltage (VGS) is +/- 16V
- Gate to the threshold voltage (VGS (th)) is 1V to 2V
- Drain current (Id) is 47A
- Pulsed drain current (IDM) is 160A
- Power dissipation (PD) is 110W
- Total gate charge (Qg) is 48nC
- Drain to source on-state resistance (RDS (ON)) 022Ω
- Rise time (tr) is 84ns
- Peak diode recovery dv/dt is 5V/ns
- Thermal resistance junction to ambient (Rth j-A) is 62℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 80 to 120ns
- Input capacitance is 1700pF
- Output capacitance is 400pF
- Logic level gate driver
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Simple drive requirement
- Ease of paralleling
IRLZ44N MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal is used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRLZ44N MOSFET package
The IRLZ44N is a power MOSFET device that is made of a TO-220AB high power package.
The TO-220AB power package is made of plastic/epoxy material for higher temperature capacity with less weight, compactness of the MOSFET device made more applications for power devices.
TO-220AB is a through-hole semiconductor device had the provision to attach a heat sink, the metal coating on the backside of the package will transfer the heat towards the heat sink.
IRLZ44N POWER MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of IRLZ44N power MOSFET, important specs explanation help us for a better understanding of this device.
Voltage specs
The voltage specs of IRLZ44N MOSFET are a drain to source voltage is 55V, the gate to source voltage is 16V, and the gate to source threshold voltage is 1V to 2V.
The voltage specification of IRLZ44N power MOSFET shows that it had a higher voltage so we can use it in power supply applications.
Current specs
The drain current value of IRLZ44N MOSFET is 47A and the pulsed drain current value is 160A, the current specifications indicate it is a high current device which having higher load capacity applications.
Dissipation specs
The power dissipation of IRLZ44N MOSFET is 110W, the dissipation capacity of the semiconductor indicates the ability to withstand energy.
Drain to source on-state resistance
The drain to source on-state resistance is 0.022Ω, the resistance produced by the MOSFET between these terminals.
Junction temperature
The junction temperature of the IRLZ44N power MOSFET is –55 to +175℃.
Thermal resistance junction to ambient
The thermal resistance of IRLZ44N MOSFET is 62℃/W
Total gate charge
The total gate charge value of IRLZ44N MOSFET is 48nC, it is the charge needed to trigger the MOSFET.
Input capacitance
The input capacitance value of IRLZ44N MOSFET is 1700Pf.
Body diode reverse recovery time
The reverse recovery time value of IRLZ44N MOSFET is 80 to 120ns.
IRLZ44N MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRLZ44N MOSFET EQUIVALENT
The IRLZ44N power MOSFET had equivalent devices such as IRLZ44, IRLZ10, 2SK1911, BUZ12, IRF3007, IRF2807, IRFB3006, IRFB3077, IRLB4030, and IRLB3036. Each of these MOSFET devices has similar electrical specifications so we can easily replace them at the place of IRLZ44N MOSFET.
During the replacement process, we need to consider each of the important specifications such as voltage, PINOUT, and current, because these specs are very important and dangerous at the circuit level.
IRLZ44N vs IRLZ34N vs IRF2807
We compare the electrical specifications of these devices such as IRLZ44N, IRLZ34N, and IRF2807, this comparison is very useful for better understanding and the replacement process.
| Characteristics | IRLZ44N | IRLZ34N | IRF2807 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 55V | 55V | 75V |
| Gate to source voltage (VGS) | +/-16V | +/-16V | +/-20V |
| Gate threshold voltage (Vg(th)) | 1 to 2V | 1 to 2V | 2 to 4V |
| Drain current (ID) | 47A | 30A | 82A |
| Total gate charge (Qg) | 48nC | 25nC | 160nC |
| Power dissipation (PD) | 110W | 68W | 230W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175℃ | -55 to +175°C |
| Thermal resistance to ambient | 62℃/W | 62℃/W | 62℃/W |
| Drain to source on-state resistance (RDS) | 0.022Ω | 0.035Ω to 0.060Ω | 13mΩ |
| Rise time (tr) | 84ns | 100ns | 64ns |
| Input capacitance | 1700pF | 880pF | 3820pF |
| dv/dt | 5V/ns | 5V/ns | 5.9V/ns |
| Reverse recovery time (trr) | 80 to 120ns | 76 to 110ns | 100 to 150ns |
| Package | TO-220AB | TO-220AB | TO-220AB |
Characteristics curves of IRLZ44N POWER MOSFET
The output characteristics of IRLZ44N MOSFET will be plots with the drain to source current vs drain to source voltage.
At the varying gate to source voltage, drain to source current increases at different voltage levels and produces a curve, then after a particular point, the current becomes stable.
The graph shows the maximum safe operating area characteristics of IRLZ44N MOSFET, the graph plots with drain current vs drain to source voltage and on-state resistance, switching pulses.
Applications of IRLZ44N MOSFET
- Battery charger circuit
- Battery management system applications (BMS)
- Solar battery charger circuit
- Fast switching applications
- Uninterrupted power supply (UPS)
- Motor control driver
- Power supply circuit
