- IRLZ24N is an N-channel silicon POWER MOSFET transistor device
- Drain to source voltage (V (BR) DSS) is 55V
- Gate to source voltage (VGS) is +/- 16V
- Gate to the threshold voltage (VGS (th)) is 1V to 2V
- Drain current (ID) is 18A
- Pulsed drain current (IDM) is 72A
- Power dissipation (PD) is 45W
- Total gate charge (Qg) is 15nC
- Drain to source on-state resistance (RDS (ON)) 060 to 0.075Ω
- Rise time (tr) is 74ns
- Peak diode recovery dv/dt is 6V/ns
- Thermal resistance junction to ambient (Rth j-C) is 3℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 60 to 90ns
- Input capacitance is 480pF
- Output capacitance is 130pF
- Dynamic dvdt rating
- Logic-level gate drive
- Fast switching
- Ease of paralleling
- Simple drive
- Simple drive Requirement
- Fully avalanche rated
- Advanced process technology
- Low on-resistance
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal is used to trigger the MOSFET device|
|2||DRAIN||The drain is the input terminal of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
IRLZ24N high-power MOSFET device has a TO-220AB package, it is a three-terminal device made of epoxy/plastic material.
TO-220AB has higher temperature capacity and compactness as a semiconductor device.
IRLZ24N MOSFET electrical specification explanation
In this section, we explain the main electrical specifications of IRLZ24N MOSFET, which is very useful for a better understanding of the device.
The voltage specification of IRLZ24N MOSFET is the drain-to-source breakdown voltage is 55V, the gate-to-source voltage is +/-16V and the gate threshold voltage is 1V to 4V.
The voltage specs of IRLZ24N MOSFET shows, these devices have higher voltage capacity.
The drain current value of IRLZ24N MOSFET is 18A, which is the load capacity of the device, and this shows these MOSFETs have more driver and power supply applications.
The power dissipation of IRLZ24N MOSFET is 45W, the dissipation ability is the product of voltage and current values.
Drain to source on-state resistance
The On-state resistance is 0.060Ω to 0.075Ω, the resistance value of MOSFET is an important feature to consider.
The junction temperature of the IRLZ24N power MOSFET is –55 to +175℃.
Thermal resistance junction to case
The thermal resistance junction to the case of IRLZ24N MOSFET is 3.3℃/W
The capacitance value of IRLZ24N MOSFET is 480Pf.
Body diode reverse recovery time
The reverse recovery time value of IRLZ24N MOSFET is 60 to 90ns.
If you need the datasheet in pdf please click this link
The IRLZ24N MOSFET equivalent device are IRL24, 2SK972, IRFB7740, 2SK1116, BUZ22, IRFB3306, IRFB3307, IRF3205, IRLZ34N, IRFZ44 and IRFZ44R.
The specifications such as voltage, current, and PINOUT details are important at the circuit level for the replacement process.
IRLZ24N vs IRF1607 vs IRLZ34N
We compare the electrical specifications of these devices such as IRLZ44N, IRLZ34N, and IRF2807, this comparison is very useful for a better understanding and the replacement process.
|Drain to source Breakdown voltage (V(BR)DSS))||55V||75V||55V|
|Gate-to-source voltage (VGS)||+/-16V||+/-20V||+/-16V|
|Gate threshold voltage (Vg(th))||1 to 2V||1 to 2V||1 to 2V|
|Drain current (ID)||18A||142A||30A|
|Total gate charge (Qg)||15nC||210 to 320nC||25nC|
|Power dissipation (PD)||45W||380W||68W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +175℃||-55 to +175°C|
|Thermal resistance to case||3.3℃/W||0.40℃/W||2.2℃/W|
|Drain to source on-state resistance (RDS)||0.060 to 0.075Ω||0.075Ω||-|
|Rise time (tr)||74ns||22ns||100ns|
|Reverse recovery time (trr)||60 to 90ns||130 to 200ns||76 to 110ns|
Graphical characteristics of IRLZ24N
The figure shows the output characteristics of IRLZ24N MOSFET, the graph plots the drain to source current vs drain to source voltage.
At the different gate to source voltage values, the current values increase and become constant with respect to drain to source voltage.
The graph shows the maximum safe operating area of IRLZ24N MOSFET, plots with drain current vs drain to source voltage, on-state resistance, and switching speed.
The figure shows the relay driver circuit using IRLZ24N MOSFET, circuit consists of IRLZ24N, 1N4007 diode, motor, and resistor.
Applications of IRLZ24N MOSFET
- BMS systems
- Battery charger circuit applications
- Automotive applications
- Power supply circuit
- UPS circuit
- Solar charger
- Microcontroller applications
- Inverter circuit
- Amplifier circuit