IRLB8743 MOSFET

IRLB8743 MOSFET
IRLB8743 MOSFET

IRLB8743 MOSFET specification

  • It is an N-channel MOSFET device
  • Drain to source breakdown voltage (V BR (DSS)) is 30V
  • Gate to source voltage (Vgs) is +/- 20V
  • Gate to the threshold voltage (Vg (th)) is 2 to 5V
  • Drain current (Id) is 150A
  • Pulsed drain current (IDM) is 620A
  • Power dissipation is (PD) is 140W
  • Drain to source on-state resistance (RDS (ON)) 2mΩ
  • Drain to source leakage (IDSS) is 1uA
  • Total gate charge (Qg) is 54nC
  • Reverse recovery time (trr) is 44ns
  • Rise time (tr) is 92ns
  • Thermal resistance junction to case (Rth j-c) is 11℃/W
  • Junction temperature (TJ) is between -55 to +175℃

IRLB8743 MOSFET Pinout

IRLB8743 MOSFET Pinout
IRLB8743 MOSFET Pinout
Pin Number Pin Name Description
1 Gate Gate will trigger the MOSFET device   
2 Drain  In the drain terminal were current flows into the MOSFET 
3 Source In the source, terminal current flows out from the MOSFET 

 

IRLB8743 MOSFET package

The MOSFET device package used at IRLB8743 is TO-220AB, it is the package used for compact and weightless devices.

The TO-220AB is made with epoxy/plastic material and the outer cover is made with metal, which is used to attach the heat sink.

IRLB8743 is a POWER MOSFET device mainly used for higher power applications, the package will support them to make more compact circuits.  

IRLB8743 MOSFET electrical specification/application description

In this section, we try to explain the electrical specifications of the IRLB8743 MOSFET device with its application descriptions.

Voltage specs

The voltage specs of IRLB8743 are a drain to source breakdown voltage is 30v, the gate to source voltage is 20v, and the gate threshold voltage is 2 to 3.5v, the voltage value of IRLB8743 makes it a POWER semiconductor device.

Current specs

The current value of IRLB8743 is drain current is 150A and the pulsed drain current is 620A, the current show the load capacity of the MOSFET device.

The current value suggests so many heavy applications of the IRLB8743 device.

Drain to source leakage current is 1uA,

Dissipation specs

The power dissipation of IRLB8743 is 140W, the dissipation capacity of this device makes it suitable for inverter and industrial applications.

Drain to source on-state resistance

The static drain to source on-state resistance of IRLB8743 is 3.2mΩ, it is the overall resistance of the device.

Junction temperature

The junction temperature of this MOSFET is +175℃.

Reverse recovery time (trr)

The reverse recovery time of the IRLB8743 MOSFET is 44ns, it is the amount of time needed to discharge before starting conducting.

Total gate charge (Qg)

The total gate charge of IRLB8743 MOSFET is 54nC, the total gate charge needed to inject towards the gate to turn ON the MOSFET.

IRLB8743 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRLB8743 MOSFET EQUIVALENT

The MOSFET devices such as IRF2804, IRF2903Z, IRF3703, IRFB3004, IRFB7434, and IRLB3813 are the equivalents of IRLB8743 MOSFET.

The specification of each of these MOSFET devices is perfect for the replacement of IRLB8743 MOSFET.

IRLB8743 vs IRF3703 vs IRF2804

The table below will list the electrical specifications of IRLB8743 vs IRF3703 vs IRF2804 comparison.

CharacteristicsIRLB8743IRF3703IRF2804
Drain to source breakdown voltage (VBR (DSS))30V30V40V
Gate to source voltage (Vgs)20V20V20V
Gate threshold voltage (Vg(th))2 to 3.5V2 to 4V2 to 4V
Drain current (Id)150A210A270A
Total gate charge (Qg)54nC209nC240nC
Power dissipation (PD)140W230W300W
Junction temperature (TJ) 175°C175°C175°C
Drain to source on-state resistance (RDS)3.2mΩ2.3 to 3.9mΩ1.8 to 2.3mΩ
Rise time (tr)92ns123ns120ns
Reverse recovery time (trr)44ns120ns84ns
PackageTO-220ABTO-220ABTO-220AB

The voltage specs of each of the MOSFET devices are the same, the current specs of irf2804 are higher than irf3703 and irlb8743.

Power dissipation of irf2804 MOSFET is higher than the other two, this is why they have high power applications.

Characteristics curves of IRLB8743 MOSFET

output characteristics of IRLB8743 MOSFET
output characteristics of IRLB8743 MOSFET

The figures show the output characteristics of IRLB8743 MOSFET, the graph is plotted with the drain to source current vs drain to source voltage.

The variation of the gate to source voltage will make changes in the drain to source voltage and current, which are current will increase slightly initially then increases almost constantly.

At the same time, voltage increases at stops increase at a point, this is the output characteristic of IRLB8743 MOSFET.

on-state resistance vs temperature characteristics of IRLB8743 MOSFET
on-state resistance vs temperature characteristics of IRLB8743 MOSFET

The figure shows the on-state resistance vs temperature characteristics of IRLB8743 MOSFET, the graph is plotted with the drain to source on-state resistance vs junction temperature.

At a fixed drain current and gate to source voltage, the on-state resistance value starts with a minimum value and increases.

Turn-ON/OFF solenoid using IRLB8743 MOSFET

Turn-ONOFF solenoid using IRLB8743 MOSFET
Turn-ONOFF solenoid using IRLB8743 MOSFET

The figure shows the circuit used to Turn ON/OFF solenoid using IRLB8743 MOSFET and 2n3904 transistor.

The solenoid is a component that operates with a high current load, this is why IRLB8743 MOSFET is used to handle the load. 

Applications of IRLB8743 MOSFET

  • UPS
  • Inverter circuits
  • High-frequency synchronous buck converter
  • High frequency isolated DC-DC converter
  • Synchronous rectifier
  • Industrial uses

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