IRLB4132 MOSFET
IRLB4132 is a semiconductor POWER MOSFET device mainly used for high-speed switching applications.
IRLB4132 MOSFET specification
- IRLB4132 is an N-channel silicon POWER MOSFET transistor device
- Drain to source voltage (V DS) is 30V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 35V, 1.8V & 2.35V
- Drain current (ID) is 150A
- Pulsed drain current (IDM) is 620A
- Power dissipation (PD) is 140W
- Total gate charge (Qg) is 36 to 54nC
- Rise time (tr) is 92ns
- Thermal resistance junction to case (Rth j-C) is 11℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 29 to 44ns
- Input capacitance is 5110pF
- Output capacitance is 960pF
- Very low on-state resistance
- Ultra-low gate impedance
- Fully characterized avalanche voltage and current
IRLB4132 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal is used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRLB4132 package
IRLB4132 is an N-channel POWER MOSFET that has a TO-220AB package, it is a three-terminal package made with epoxy/plastic material, this will gives the package more compactness and higher temperature capacity.
TO-220AB is a through-hole transistor package, it had a metal coating at the back side of the package, which is used to transfer heat to the heat sink.
IRLB4132 electrical specification explanation
Here we explain the electrical specifications of the IRLB4132 POWER MOSFET device, this is very useful for a better understanding of the device and also supports the replacement process.
Voltage specs
Voltage specs of IRLB4132 MOSFET are a drain to source voltage is 30V, the gate to source voltage is 20V, and the gate threshold voltage is 1.35V, 1.8V, and 2.35V.
The specification of IRLB4132 MOSFET shows that it is low voltage device which having enormous low-voltage applications.
Current specs
The current value of IRLB4132 MOSFET is 150A, the current specs of a semiconductor indicate the maximum load capacity.
The pulsed current value of IRLB4132 MOSFET is 620A, it is always four times larger than the current value.
Dissipation specs
The power dissipation of IRLB4132 MOSFET is 140W, it is the dissipation ability of the MOSFET device.
Junction temperature/storage temperature
The junction temperature/storage temperature of the IRLB4132 is –55 to +175℃.
Thermal resistance junction to case
The thermal resistance, junction to the case of IRLB4132 MOSFET is 1.11℃/W
Input capacitance
The input capacitance value of IRLB4132 MOSFET is 5110Pf.
Body diode reverse recovery time
The reverse recovery time value of IRLB4132 MOSFET is 29 to 44ns.
Rise time
The rise time value of IRLB4132 MOSFET is 92ns, it is the switching speed of the semiconductor device.
IRLB4132 DATASHEET
If you need the datasheet in pdf please click this link
IRLB4132 EQUIVALENT
The MOSFET devices such as IRLB4030, IRFZ24NL, IRFIP054, IRFI7446G, and IRFI7536G are the equivalent device of IRLB4132 MOSFET, each of these devices has the same electrical specifications, so we can easily replace them with IRLB4132 MOSFET.
IRLB4132 MOSFET devices are been mainly used for low-voltage applications and power supply applications, so we need to check and verify the specs such as current and voltage values.
IRLB4132 vs IRLB4030
We list and compare the electrical specifications of IRLB4132 and IRLB4030 MOSFETs, this is used for a clear about the device and is useful for the replacement process.
| Characteristics | IRLB4132 | IRLB4030 |
|---|---|---|
| Drain to source voltage (VDS)) | 30V | 100V |
| Gate-to-source voltage (VGS) | +/-20V | +/-16V |
| Gate threshold voltage (Vg(th)) | 1.35V, 1.8V and 2.35V | 1 to 2V |
| Drain current (ID) | 150A | 180A |
| Pulsed drain current | 620A | 730A |
| Total gate charge (Qg) | 36Nc to 54Nc | 87 to 130nC |
| Power dissipation (PD) | 140W | 370W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175℃ |
| Thermal resistance, junction to case | 1.11℃/W | 0.40℃/W |
| Rise time (tr) | 92ns | 330ns |
| Input capacitance | 5120pF | 11360pF |
| Reverse recovery time (trr) | 29 to 44ns | 50 to 60ns |
| Package | TO-220AB | TO-220AB |
Graphical characteristics of IRLB4132 MOSFET
The figure shows the output characteristics of IRLB4132 MOSFET, the graph plots the drain to source current vs drain to source voltage.
At the different gate-to-source values, the drain current increases from zero and forms curves with respect to voltage values.
The graph shows the maximum safe operating area of IRLB4132 MOSFET, the graph plots the drain to source voltage vs drain to source voltage, on-state resistance, and switching speed.
Applications of IRLB4132
- High-performance UPS
- Inverter circuit
- Low voltage power tool applications
- Power supply circuit
- Solar charger circuit
- Battery charger circuit
- BMS systems
- SMPS circuits
