IRFZ44N MOSFET specification
- It is an N-channel MOSFET device
- Drain to source breakdown voltage (V BR (DSS)) is 55V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 2 to 4V
- Drain current (Id) is 49A
- Pulsed drain current (IDM) is 160A
- Power dissipation is (PD) is 94W
- Drain to source on-state resistance (RDS (ON)) 032ohm
- Gate to body leakage current (IGSS) is 100nA
- Total gate charge (Qg) is 63nC
- Reverse recovery time (trr) is 63 to 95ns
- Rise time (tr) is 60ns
- Thermal resistance junction to case (Rth j-c) is 5℃/W
- Junction temperature (TJ) is between -55 to 175℃
IRFZ44N MOSFET Pinout
|Gate will trigger the MOSFET device
|In the drain terminal were current flows into the MOSFET
|In the source, terminal current flows out from the MOSFET
IRFZ44N MOSFET package
At the IRFZ44N MOSFET device, the TO-220C package will be used as the semiconductor device.
The TO-220C is the package used to made with epoxy and plastic material, the epoxy material is good at heat resistance, this is why they are been used at POWER MOSFET devices.
And the backside of the MOSFET is made with metal, which is used to transfer the heat produced at the component, for the transferring process we use a heat sink by attaching it with the MOSFET.
IRFZ44N MOSFET electrical specification description
In this section, we try to explain the electrical specifications and applications of the IRFZ44N MOSFET device.
The terminal voltage specifications of IRFZ44N MOSFET are a drain to source breakdown voltage is 55V, the gate to source voltage is 20V, and gate to source threshold voltage is 2 to 4V, the terminal voltage specifications show that it is a medium power device with applications at power supply devices.
The current specs of IRFZ44N MOSFET will drain current value is 49A and pulsed drain current is 160A and gate to body leakage current is 100uA, the drain current value shows the maximum load capability of the device.
The power dissipation of IRFZ44N MOSFET is 94W, it is the power dissipation capacity or heat capacity of the device.
Drain to source on-state resistance
The drain to source on-state resistance value is 0.032ohm, the on-state resistance of the MOSFET means the device’s overall resistance.
The junction temperature of this MOSFET is 175℃.
Reverse recovery time (trr)
The reverse recovery time of the IRFZ44N MOSFET is 63 to 95ns, it is the amount of time needed to discharge before start conducting.
IRFZ44N MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRFZ44N MOSFET EQUIVALENT
The MOSFETs such as IRF2807, IRFB3207, IRFB4710, 2SK2376, and IRF1010A are the MOSFET equivalent of IRFZ44N.
The electrical and physical specifications of all of these MOSFET devices are the same, so we can easily replace IRFZ44N with these MOSFETs.
IRFZ44N vs IRF2807 vs IRFZ48
The below listed the comparison of electrical specs of IRFZ44N vs IRF2807 vs IRFZ48.
|Drain to source breakdown voltage (VBR (DSS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|2 to 4V
|2 to 4V
|Drain current (Id)
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|Drain to source on-state resistance (RDS)
|Rise time (tr)
Almost every electrical specification of each MOSFET device is the same, in these three MOSFETs, IRF2807 had higher current and dissipation capacity.
Each of these three MOSFETs is mainly used at the power supply and high-speed switching applications.
Characteristics curves of IRFZ44N MOSFET
The figures show the output characteristics of IRFZ44N MOSFET, both the graphs indicate that when the gate to source voltage controls the drain current, because each time gate voltage increases, drain current proportionally.
The figure shows the on-state resistance characteristics of IRFZ44N MOSFET, the on-state resistance curve is plotted with the drain to source on-state resistance vs junction temperature.
At the constant voltage and current values, the on-state resistance value increases towards a fixed value.
Applications of IRFZ44N MOSFET
- High-speed switching devices
- Power supply devices
- Motor controller devices
- Bridge circuits