IRFP460 MOSFET
IRFP460 MOSFET specification
- IRFP460 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 500V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 20A
- Pulsed drain current (IDM) is 80A
- Power dissipation is (PD) is 280W
- Total gate charge (Qg) is 210nC
- Drain to source on-state resistance (RDS (ON)) 27Ω
- Zero gate voltage drain current (IDSS) is 25 to 250uA
- Rise time (tr) is 59ns
- Peak diode recovery dv/dt is 5V/ns
- Thermal resistance junction to ambient (Rth j-A) is 40℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 570 to 860ns
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Designed for fast switching devices
- Low on-state resistance
IRFP460 MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate is used to trigger the MOSFET |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | Source | In the source, terminal current flows out from the MOSFET |
IRFP460 MOSFET package
The IRFP460 MOSFET devices have the TO-247 package, it is packaging commonly comes in two types 3pin and 4pin, the IRFP460 MOSFET had a 3pin TO-247 package.
The TO-247 through-hole package is made as bulkier in size and lite weighted in mass, both of these are possible by making the TO-247 package using epoxy and plastic material.
Another advantage of the TO-247 package is the heat resistance capability, this is possible due to two things, the material used to make the package and the provision added for the heat sink.
We know IRFP460 is a POWER MOSFET device, an exchange of higher power are been happen at the device, and so the TO-247 package is a must thing for this MOSFET device.
IRFP460 MOSFET electrical specification explanation
In this section, we try to explain the electrical specifications of IRFP460 MOSFET, this description is really helpful for a better understanding of the IRFP460 MOSFET and its application notes.
Voltage specs
The terminal voltage specs of IRFP460 MOSFET are a drain to source voltage is 500V and gate to source voltage is 20V, this is the voltage characteristics of this MOSFET device.
The gate threshold voltage is between 2V to 4V, it is the trigger voltage needed to switch the IRFP460 MOSFET device.
Overall voltage specifications of IRFP460 MOSFET show that they are high voltage POWER MOSFET devices, which had more applications on power supply circuits.
Current specs
The drain current value of IRFP460 MOSFET is 20A, this is the maximum load capacity of this MOSFET under normal operating conditions.
The pulsed drain current value of IRFP460 MOSFET is 80A, this is the maximum load capacity of this device in specific conditions where some of the quantities are in constant condition.
The current specification of IRFP460 MOSFET shows that it is a POWER device that has many applications in high power driver circuits.
Zero gate voltage drain current
The value for zero gate voltage drain current is 25 to 250uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.
Dissipation specs
The power dissipation value of IRFP460 MOSFET is 280mW, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 0.27Ω, it is the overall resistance offered by the MOSFET.
Junction temperature
The junction temperature of the IRFP460 MOSFET is –55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of IRFP460 MOSFET is 40℃/W
Total gate charge
The total gate charge value of IRFP460 is 210nC, it is the charge needed to trigger the MOSFET.
Rise time
The rise time value for IRFP460 MOSFET is 59ns, it is the switching time offered by the MOSFET.
IRFP460 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRFP460 MOSFET EQUIVALENT
The MOSFET devices such as IRF3205, IRF250, and IRF840 are the equivalent devices for IRFP460 MOSFET.
These devices had many similarities with IRFP460 MOSFET, mainly in their electrical specifications and type of MOSFET.
IRFP460 vs IRFP450 vs IRFP250
In this table we try to compare three almost similar MOSFET device electrical specifications, this comparison is really helpful for a better understanding of these MOSFETs.
| Characteristics | IRFP460 | IRFP450 | IRFP250 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 500V | 500V | 200V |
| Gate to source voltage (Vgs) | 20V | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V | 2 to 4V |
| Drain current (Id) | 20A | 28A | 30A |
| Zero gate voltage drain current (IDSS) | 25 to 250uA | 25 to 250uA | 25 to 250uA |
| Total gate charge (Qg) | 210nC | 150nC | 140nC |
| Power dissipation (PD) | 280W | 190W | 190W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Drain to source on-state resistance (RDS) | 0.27Ω | 0.40Ω | 0.085Ω |
| Rise time (tr) | 59ns | 47ns | 86ns |
| Reverse recovery time (trr) | 570 to 860ns | 540 to 810ns | 360 to 540ns |
| Package | TO-247 | TO-247 | TO-247 |
The IRFP460 and IRFP450 MOSFETs had almost similar electrical specifications, the exception is at drain current, gate charge, and power dissipation values.
The IRFP250 MOSFET is a different device in terms of electrical specs from these two MOSFETs, the voltage value is less and the current value is higher for IRFP250 MOSFET.
Other than this each of these three MOSFETs is the same, the applications based on these MOSFETs are POWER supply and driver-based.
Characteristics curves of IRFP460 MOSFET
The figure shows the output characteristics of IRFP460 MOSFET, the graph is plotted with drain current vs drain to source voltage.
The curve is plotted at the different gates to source voltage, the variations of the drain current will happen after a short gap with respect to drain to source voltage.
After the initial stages, the MOSFET device continuously produces high voltage and current characteristics.
The figure shows the safe operating area of the IRFP460 MOSFET, the graph is plotted with drain current vs drain to source voltage and also other quantities like on-state resistance, temperature, switching time, and temperature.
The figure shows the on-state resistance characteristics of IRFP460 MOSFET, the graph is plotted with the drain to source on-state resistance vs junction temperature.
At a fixed gate to source voltage and current values, the on-state resistance initially starts at a lower value and increases its position after some time after the MOSFET starts its normal operation.
Applications of IRFP460 MOSFET
- Power switching applications
- Motor driver system
- Other switching applications
- Solid-state relays
- LED drivers
- Power amplifier
- Preamp
- DC/ DC converter
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