- IRFP240 is an N-channel enhancement mode silicon gate POWER MOSFET device
- Drain to source voltage (VDS) is 200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 20A
- Pulsed drain current (IDM) is 80A
- Power dissipation (PD) is 150W
- Total gate charge (Qg) is 70nC
- Drain to source on-state resistance (RDS (ON)) 18Ω
- Rise time (tr) is 51ns
- Peak diode recovery dv/dt is 5V/ns
- Thermal resistance junction to ambient (Rth j-A) is 40℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) is 300 to 610ns
- Input capacitance is 1300pf
- Output capacitance is 400pf
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirement
- SOA is power dissipation limited
- Nano-second switching speed
- Linear transfer characteristics
- High input impedance
|The gate terminal will be used to trigger the MOSFET device
|The drain is the input terminal of the MOSFET
|In the source, terminal current flows out from the MOSFET
IRFP240 MOSFET package
The IRFP240 is a POWER MOSFET device having a TO-247 package.
TO-247 is a three-terminal bulkier POWER semiconductor package, it is made of epoxy/plastic material which provides a higher temperature capacity with a compact outer covering.
The backside portion of the TO-247 package is coated with metal which will help us to transfer the heat toward the heat sink, it is a through-hole transistor device, so we can attach the heat sink with it.
IRFP240 POWER MOSFET electrical specification explanation
In this explanation we descript the electrical specifications of IRFP240, this explanation is really helpful for a better understanding of this device and support for the replacement process.
The voltage specs of IRFP240 MOSFET are a drain-to-source voltage is 200V, a gate-to-source voltage is 20V, and gate to source threshold voltage is 2V to 4V.
The overall voltage specifications of IRFP240 MOSFET show that it is a POWER MOSFET used for high-power switching applications.
The drain current value of IRFP240 MOSFET is 20A, it is the maximum load capacity of the device.
The pulsed drain current value of IRFP240 MOSFET is 80A, this value is always three times larger than the drain current which is dependent on the pulse width of the device.
The power dissipation value of IRFP240 MOSFET is 150W, it is the product of voltage and current.
Drain to source on-state resistance
The on-state resistance value of IRFP240 MOSFET is 0.18Ω, it is the maximum resistance value of the device.
Junction temperature/ storage temperature
The junction temperature/storage temperature of the IRFP240 MOSFET is -55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of IRFP240 MOSFET is between junctions to ambient 40℃/W
Total gate charge
The total gate charge value of IRFP240 is 70nC.
The rise time value for IRFP240 MOSFET is 51ns
The input capacitance value of IRFP240 MOSFET is 1300pf.
The output capacitance value of IRFP240 MOSFET is 400pf
IRFP240 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
The IRFP240 MOSFET device has equivalent devices such as IRFP250, IRFP252, 2SK622, BUZ341, 2SK400, SSH40N15, and IRFP260, each of these devices have a similar set of electrical specifications.
IRFP240 vs IRFP250 vs BUZ341
In this table, we listed the electrical specifications of IRFP240, IRFP250, and BUZ341, this comparison is really helpful for a better understanding and support for the replacement process.
|Drain to source voltage (VDS))
|Gate-to-source voltage (VGS)
|The gate threshold voltage (VG(th))
|2V to 4V
|2V to 4V
|2.1 to 4V
|Drain current (ID)
|Pulsed drain current
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|-55 to +150°C
|Drain to source on-state resistance (RDS)
|0.06 to 0.07Ω
|Rise time (tr)
|Reverse recovery time (trr)
|300 to 610ns
|360 to 540ns
Characteristics curves of IRFP240 MOSFET
The figure shows the output characteristics of IRFP240 MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate to source voltage values, the drain current values increase with respect to drain to source voltage.
The figure shows the maximum safe operating area of IRFP240 MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, and switching speed.
The figure shows the IRFP240 MOSFET-based 100Watt amplifier circuit, the circuit is based on BC556, MJE350, MJE340, and IRFP240.
Applications of IRFP240 MOSFET
- SMPS circuit
- DC to DC converter
- UPS circuit
- Solar charger circuit
- Automotive applications
- Commercial industrial applications
- Motor driver applications
- Relay driver applications
- Low gate driver power applications