- IRF9640 is a P-channel silicon gate POWER MOSFET transistor device.
- Drain to source voltage (VDS) is -200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (ID) is -11A
- Pulsed drain current (IDM) is -44A
- Power dissipation is (PD) is 125W
- Total gate charge (Qg) is 44nC
- Drain to source on-state resistance (RDS (ON)) 50Ω
- Rise time (tr) is 43ns
- Peak diode recovery dv/dt is -5V/ns
- Thermal resistance junction to case (Rth j-C) is 1℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 150℃
- Body diode reverse recovery (trr) 250 to 300ns
- Input capacitance is 1200pF
- Output capacitance is 370pF
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Ruggrized device design
- Low on-resistance
|The gate terminal is used to trigger the MOSFET device
|The drain is the input terminal of the MOSFET
|In the source, terminal current flows out from the MOSFET
IRF9640 p-channel POWER MOSFET has a TO-220AB package, TO-220AB is a bulkier through-hole package made of epoxy/plastic material which provides us with high-temperature capacity.
TO-220AB package is compact and it had the provision to attach a heat sink for transfer heat towards in for dissipation ability.
IRF9640 electrical specification explanation & application note:
Here in this section, we explain the electrical specifications of the IRF9640 MOSFET device.
The voltage specs of IRF9640 MOSFET are a drain-to-source voltage is -200V, a gate-to-source voltage is +/-20V, and gate to source threshold voltage between -2V and -4V.
The voltage specifications of IRF9640 MOSFET show that it is a high-power device with a wide range of power applications.
The current value of the device indicates the load capacity of the semiconductor, the drain current value is -11A.
The pulsed drain current value of IRF9640 MOSFET is -44A, it is calculated at a specific condition.
The current specification of IRF9640 MOSFET indicates it had a wide range of power-switching applications.
The power dissipation ability of IRF9640 MOSFET is 125W, this mainly depends on the package and this package gives the device support for power application.
Drain to source on-state resistance
The drain to source on-state resistance value at IRF9640 MOSFET is 0.50Ω, this resistance value is very important at circuit level working.
Junction temperature/ storage temperature
Maximum temperature value of IRF9640 MOSFET is -55 to +150℃, this value also depends on the device package.
Thermal resistance junction to case
Thermal resistance value of IRF9640 MOSFET is 1℃/W, it is the ability of the device at higher temperature values.
Rise time value of IRF9640 MOSFET is 43ns, and the switching speed of the device is important for switching applications.
The capacitance value of IRF9640 MOSFET is 1200pF.
The output capacitance value of IRF9640 MOSFET is 370Pf, this value is important on the circuit level.
Total gate charge
The total gate charge value of IRF9640 MOSFET is 44nC
If you need the datasheet in pdf please click this link
IRF9640 MOSFET has equivalent devices such as 2SJ513, IRFP9640, IRF044, IRF054, IRF100B201, and MTW14P20, each of these MOSFET devices have the same set of electrical specifications.
The specs such as voltage value, current value, dissipation value, and on-state resistance value, each of these specifications is important for power switching and power applications, so check and verify before the replacement process.
IRF9640 vs IRFP9240
Here in the table below we list and compare the electrical specifications of IRF9640 and IRFP9240, this comparison is important for a better understanding of the replacement process.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|-2 to -4V
|-2 to -4V
|Drain current (Id)
|Pulsed drain current (ICM)
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|Drain to source on-state resistance (RDS)
|Rise time (tr)
|Reverse recovery time (trr)
|250 to 300ns
|300 to 450ns
Graphical representation of IRF9630 MOSFET
The figure shows the output characteristics of IRF9640 MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate-to-source voltage values, the drain current value increases from the lowest value to a higher value with respect to drain-to-source voltage.
In the end, the drain current curve increases dramatically towards a higher value quickly with respect to voltage value.
The figure shows the maximum safe operating area characteristics of IRF9640 MOSFET, the graph plots with drain current, drain to source voltage, on-state resistance, and switching speed.
This graphical representation indicates the operation ability of the IRF9640 MOSFET in different applications.
- Wide acceptance for industrial application
- Battery charger applications
- Solar applications
- Motor driver applications
- Converter application
- Voltage booster application