IRF9630 MOSFET
IRF9630 specification
- IRF9630 is a P-channel enhancement mode silicon gate POWER MOSFET transistor device.
- Drain to source voltage (VDS) is -200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (ID) is -6.5A
- Pulsed drain current (IDM) is -26A
- Power dissipation is (PD) is 74W
- Total gate charge (Qg) is 29nC
- Drain to source on-state resistance (RDS (ON)) 80Ω
- Rise time (tr) is 27ns
- Peak diode recovery dv/dt is -5.0V/ns
- Thermal resistance junction to case (Rth j-C) is 7℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 150℃
- Body diode reverse recovery (trr) 200 to 300ns
- Input capacitance is 700pF
- Output capacitance is 200pF
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- SOA is power dissipation limited
- Nano-second switching speed
- Linear transfer characteristics
- High input impedance
- Low on-state resistance
IRF9630 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal is used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF9630 package
IRF9630 MOSFET is a HIGH POWER device which having a TO-220AB package.
TO-220AB is a three-terminal bulkier package, made of epoxy/plastic material for heat resistance and compactness as a semiconductor component.
TO-220AB is a through-hole package had a metal coating at the backside for heat transferring toward the heat sink.
IRF9630 electrical specification explanation
In this section we explain the electrical specifications of IRF9630 MOSFET, this explanation is really helpful for a better understanding of the device
Voltage specs
Voltage specifications of IRF9630 MOSFET are a drain to source voltage is -200V, the gate to source voltage is +/-20V, and the gate threshold voltage is -2V to -4V.
The specifications of IRF9630 MOSFET show that it is a high-voltage device having power supply applications.
Current specs
The drain current value of IRF9630 MOSFET is -6.5A, which is the maximum load capacity of the device.
The pulsed drain current value of IRF9630 MOSFET is -26A, it is the current at pulsed condition.
The current value of the MOSFET shows that these devices have power supply and driver applications.
Dissipation specs
The power dissipation value of IRF9630 MOSFET is 74W, the dissipation ability depends on the product of voltage and current values.
Drain to source on-state resistance
The drain-to-source on-state resistance is 0.80Ω, it is the maximum resistance of the MOSFET.
Junction temperature/ storage temperature
The junction temperature/ storage temperature of the IRF9630 MOSFET is -55 to +150℃.
Thermal resistance junction to case
The thermal resistance junction to the case of IRF9630 MOSFET is 1.7℃/W
Rise time
The rise time of IRF9630 MOSFET is 27ns, it is the switching value of the MOSFET.
Input capacitance
The capacitance value of IRF9630 MOSFET is 700pF
Output capacitance
The output capacitance value of IRF9630 MOSFET is 200Pf, this value is very important at the circuit level.
IRF9630 DATASHEET
If you need the datasheet in pdf please click this link
IRF9630 EQUIVALENT
The MOSFET devices IRF9630P, IRF034, IRF044, IRF054, IRF100B201, IRF9620S, and IRF9611 are the IRF9630 equivalent, each of these devices has the same set of electrical specifications.
The IRF9630 MOSFET has more POWER supply applications, so we need to check the voltage, current, and PINOUT details before the replacement process.
IRF9630 vs IRF9620
In this table we list the electrical specifications of IRF9630 and IRF9620 MOSFETs, this comparison is very useful for a better understanding.
| Characteristics | IRF9630 | IRF9620 |
|---|---|---|
| Drain to source voltage (VDS)) | -200V | -200V |
| Gate to source voltage (Vgs) | +/-20V | +/-20V |
| Gate threshold voltage (Vg(th)) | -2 to -4V | -2 to -4V |
| Drain current (Id) | -6.5A | -3.5A |
| Total gate charge (Qg) | 29nC | 22nC |
| Power dissipation (PD) | 74W | 40W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Drain to source on-state resistance (RDS) | 0.80Ω | 1.5Ω |
| Rise time (tr) | 27ns | 15ns |
| Input capacitance | 700pF | 350pF |
| Output capacitance | 200pF | 100pF |
| Reverse recovery time (trr) | 200 to 300ns | 300 to 450ns |
| Package | TO-220AB | TO-220AB |
Graphical characteristics of IRF9630 MOSFET
The figure shows the output characteristics of IRF9630 MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate to source voltage values, the drain current value increases from zero value towards a limit and becomes constant.
The figure shows the maximum safe operating area characteristics of the IRF9630 MOSFET, the graph plots with drain current vs drain to source voltage, pulse value, and on-state resistance.
IRF9630 Application
- Commercial industrial applications
- SMPS circuit
- Switching converters
- Motor driver
- Relay driver applications
- High power switching
- Battery charger circuit
- BMS
- Audio amplifier
