IRF9540 MOSFET specification
- IRF9540 is a P-channel enhancement mode silicon gate POWER MOSFET transistor device
- Drain to source voltage (VDS) is -100V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (Id) is -19A
- Pulsed drain current (IDM) is -72A
- Power dissipation is (PD) is 150W
- Total gate charge (Qg) is 61nC
- Drain to source on-state resistance (RDS (ON)) 20Ω
- Zero gate voltage drain current (IDSS) is -100 to -500uA
- Rise time (tr) is 73ns
- Peak diode recovery dv/dt is -5.5V/ns
- Thermal resistance junction to ambient (Rth j-A) is 62℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 130 to 260ns
- Input capacitance is 1400pF
- Output capacitance is 590pF
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- High operating temperature capacity
- Simple drive requirement
- Single pulse avalanche energy rated
- SOA is power dissipation
- Nano-second switching speed
- Linear transfer characteristics
- High input impedance
- Low thermal resistance
IRF9540 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal is used to trigger the MOSFET device|
|2||DRAIN||The drain is the input terminal of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
IRF9540 MOSFET package
The IRF9540 MOSFET device had a TO-220AB package, it is a package mainly used for power transistor devices.
The TO-220AB package main portion is made with epoxy/plastic material and the heat transferring portion is made with metal.
The heat resistance is the main property the TO-220AB package had as an electronic component, TO-220AB package is made as a through-hole type, so we can attach a heat sink with it for heat transfer.
IRF9540 MOSFET electrical specification explanation
In this description we explain the electrical specifications of the IRF9540 MOSFET device, this explanation is really helpful for a better understanding of this device and replacement process.
The terminal voltage specs of IRF9540 MOSFET such as drain to source voltage is -100V, the gate to source voltage is +/-20V, and gate to source threshold voltage is -2V to -4V.
The voltage specifications of IRF9540 MOSFET show that it is a POWER device mainly used for power switching and power supply applications.
The drain current value of IRF9540 MOSFET is -19A, and the current specs of the component show the total load capacity.
The pulsed drain current value is -72A, and the pulsed current value is always double or triple the normal value, this is due to they are been calculated in a specific condition.
Zero gates voltage drain current
The value for zero gate voltage drain current is -100 to -500uA, this is been calculated in a specific condition where gate voltage are been zero and drain current flows when the gate to source voltage becomes zero.
The power dissipation value of IRF9540 MOSFET is 150W, the power dissipation value of this device are been mainly calculated from the packaging.
Drain to source on-state resistance
The drain to source on-state resistance is 0.20Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the IRF9540 MOSFET is –55 to +175℃.
Thermal resistance junction to ambient
The thermal resistance of IRF9540 MOSFET is 62℃/W
Total gate charge
The total gate charge value of IRF9540 MOSFET is 61nC, it is the charge needed to trigger the MOSFET.
The rise time value for IRF9540 MOSFET is 73ns, it is the switching time offered by the MOSFET.
The input capacitance value of IRF9540 MOSFET is 1400Pf.
The output capacitance value of IRF9540 MOSFET is 590pF
Body diode reverse recovery time
The reverse recovery time value of IRF9540 MOSFET is 130 to 260ns, it is the value mainly related to the body diode inside the MOSFET.
IRF9540 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF9540 MOSFET EQUIVALENT
The MOSFET devices such as IRF044, IRF034, 2SJ380, 2SJ464, 2SJ412, SIHF9540, and IRF9540PBF are equivalents of IRF9540.
The electrical specifications of these equivalent devices are the same, so we use them as the equivalent and replace IRF9540 MOSFET at the circuit.
IRF9540 MOSFET is a power device, so we need to check every important electrical spec and PINOUT details of devices during the replacement process.
IRF9540 vs 2SJ464
In this table comparison, we try to list the electrical specifications of IRF9540 and 2SJ464 MOSFET devices.
|Drain to source voltage (VDS))||-100V||-100V|
|Gate to source voltage (Vgs)||+/-20V||+/-20V|
|Gate threshold voltage (Vg(th))||-2 to -4V||-2 to -4V|
|Drain current (Id)||-19A||-18A|
|Zero gate voltage drain current (IDSS)||-100 to -500uA||-100uA|
|Total gate charge (Qg)||61nC||140nC|
|Power dissipation (PD)||150W||45W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||0.20Ω||64 to 120mΩ|
|Rise time (tr)||73ns||25ns|
|Reverse recovery time (trr)||130 to 260ns||220ns|
The IRF9540 and 2SJ464 MOSFETs are similar types, so the electrical specifications of both devices are the same.
For power applications like UPS, battery management systems, switching converters, and charger systems, we need to check and verify the specific electrical and physical specifications before the replacement.
Characteristics curves of IRF9540 MOSFET
The figure shows the output characteristics of IRF9540 MOSFET, the characteristics curve plots with drain current vs drain to source voltage.
At the different gate to source voltage variations, the drain current increases towards a point with respect to drain to source voltage.
The drain current value increases from the lowest to the higher value, and the voltage value increases and become constant.
The figure shows the maximum safe operating area characteristics of the IRF9540 MOSFET device, the graph is been plots with different quantities like drain current, drain to source voltage, switching speed, on-state resistance, and temperature values.
Applications of IRF9540 MOSFET
- All commercial applications
- Switching regulator circuits
- Switching converters
- Motor driver
- Relay driver
- Driver for high power bipolar switching transistors
- High speed and low gate driver
- UPS system applications
- Battery management systems (BMS)
- Battery charger circuits
- Solar related applications