- IRF9530 is a P-channel power MOSFET device
- Drain to source voltage (VDS) is -100V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (ID) is -12A
- Pulsed drain current (IDM) is -48A
- Power dissipation is (PD) is 40W
- Total gate charge (Qg) is 38nC
- Drain to source on-state resistance (RDS (ON)) 30Ω
- Rise time (tr) is 52ns
- Peak diode recovery dv/dt is -5.5V/ns
- Thermal resistance junction to case (Rth j-A) is 62℃/W
- Maximum temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 120 to 240ns
- Input capacitance is 860pF
- Output capacitance is 340pF
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Low on-state resistance
- Low thermal resistance
- Low package cost
|The gate terminal is used to trigger the MOSFET device
|The drain is the input terminal of the MOSFET
|In the source, terminal current flows out from the MOSFET
IRF9530 is a power MOSFET device having a TO-220AB package made with epoxy/plastic material and the back side is coated with metal which acts as the heat sink.
TO-220AB is a bulkier through-hole package which had the provision to attach a heat sink, which will increase the heat capacity and also it is a compact package.
IRF9530 specification explanation/application note:
We explain the electrical specifications of IRF9530 POWER MOSFET, this explanation is very important for a better understanding of the device for the replacement process.
The terminal voltage specifications of IRF9530 MOSFET are a drain-to-source voltage is -100V and a gate-to-source voltage is +/-20V.
The switching voltage specs are the gate to source threshold value is between -2V and -4V.
The voltage specifications of IRF9530 MOSFET show that it is a power device having more power supply-based applications.
The current specs of IRF9530 MOSFET’s drain current value are -12A and the pulsed drain current value is -48A.
The current specifications of IRF9530 MOSFET show it is a high-power device having more power handling applications and the specs indicate IRF9530 MOSFET has a higher load capacity.
The power dissipation value of IRF9530 MOSFET is 40W.
Drain to source on-state resistance
The on-state resistance value of IRF9530 MOSFET is 0.30Ω, this value is calculated from an internal section of the MOSFET.
The junction temperature value of IRF9530 MOSFET is -55 to +175℃, this value mainly depends on the device package.
Thermal resistance junction to case
Thermal resistance value between the junction and to ambient is 62℃/W, it is the maximum heat capacity of the internal device.
Output capacitance value of IRF9530 MOSFET is 340pF, different layers of the MOSFET form different capacitance internal, so the output capacitance had an important role at the circuit level.
The input capacitance value of IRF9530 MOSFET is 860Pf, which is important at the circuit level.
Total gate charge
The total gate charge value of IRF9530 MOSFET is 38nC.
If you need the datasheet in pdf please click this link
IRF9530 MOSFET device has different equivalents such as 2SJ380, IRF9540, 2SJ412, IRF4905, and FQP27P06, each of the devices has the same set of electrical specifications, so we can easily use it as the equivalent device for IRF9530.
the specifications such as voltage specs, current specs, on-state resistance, and switching speed, we need to check and verify before the replacement process.
The PINOUT details of these equivalent devices are different from IRF9530, so check and verify before the replacement.
IRF9530 vs 2SJ380
In the table below we list and compare the electrical specifications of IRF9530 and 2SJ380 MOSFET devices, this comparison is very important for better understanding and also for supporting the replacement process.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|-2 to -4V
|-0.8 to -2V
|Drain current (ID)
|Pulsed drain current (IDM)
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +175°C
|-55 to +150°C
|Drain to source on-state resistance (RDS)
|0.25 to 0.32Ω
|Rise time (tr)
|Reverse recovery time (trr)
|120 to 240ns
IRF9530 MOSFET CHARACTERISTICS CURVES
The figure shows the output characteristics of IRF9530 MOSFET, the graph plots with drain current vs drain to source voltage.
The curves are been plotted at the different gate to source voltage values, when the voltage value increases the current output increases, and at the higher value current increases dramatically.
The figure shows the safe operating area characteristics of IRF9530 MOSFET, the graph is plotted with drain current, drain to source voltage, on-state resistance, and switching speed.
From the graph, we can read different operation limitations and ranges of IRF9530 MOSFET, which is very useful for circuit making.
The figure shows the LED controller circuit using IRF9530 MOSFET, the circuit consists of three IRF9530 MOSFETs, LEDSs, and resistance.
The MOSFETs are been used to make switching action of the circuit for LED, we can use more number of LEDs as the load.
- Wide acceptance throughout the industrial applications
- UPS circuit
- Motor control circuit applications
- High-speed switching applications
- SMPS circuit
- Relay driver circuit applications
- Battery charger circuit
- Power supply circuit
- Audio amplifier circuit