IRF830 specification

  • IRF830 is fast switching N-channel POWER MOSFET device
  • Drain to source voltage (VDS) is 500V
  • Gate to source voltage (VGS) is +/- 20V
  • Gate to the threshold voltage (VGS (th)) is 2V to 4V
  • Drain current (ID) is 5A
  • Pulsed drain current (IDM) is 18A
  • Power dissipation (PD) is 74W
  • Total gate charge (Qg) is 38nC
  • Drain to source on-state resistance (RDS (ON)) 5Ω
  • Rise time (tr) is 16ns
  • Peak diode recovery dv/dt is 5V/ns
  • Thermal resistance junction to ambient (Rth j-A) is 62℃/W
  • Junction temperature (TJ) is between -55 to 150℃
  • Body diode reverse recovery (trr) 320 to 640ns
  • Input capacitance is 610pf
  • Output capacitance is 160pf
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirement
  • Cost efficient
  • Low on-state resistance

IRF830 Pinout

IRF830 Pinout
IRF830 Pinout
Pin Number Pin Name Description
1 GATE The gate terminal will be used to trigger the MOSFET device
2 DRAIN The drain is the input terminal of the MOSFET
3 SOURCE In the source, terminal current flows out from the MOSFET 


IRF830 package

IRF830 MOSFET is a fast-switching semiconductor device which had a TO-220AB component package.

TO-220AB is a bulkier package made of epoxy/plastic material, this will provide them with higher heat resistance capability and compactness.

TO-220AB is the through-hole component package, this is very useful for attaching a heat sink to the package for heat transferring ability.

IRF830 electrical specification explanation 

Here in this section, we try to explain the electrical specifications of IRF830 MOSFET, this explanation is better for understanding the device.

Voltage specs

The voltage specs of IRF830 MOSFET are a drain-to-source voltage is 500V, a gate-to-source voltage is +/-20V, and gate to source threshold voltage is -2V and -4V.

The voltage specifications of the device show that it is a higher voltage MOSFET with a wide range of applications.

Current specs

The drain current specs of IRF830 MOSFET is 4.5A, the current value is the maximum load capacity of the semiconductor device.

The pulsed drain current value of IRF830 MOSFET is 18A, it is the maximum load value at pulsed condition.

The overall current value of the IRF830 MOSFET shows that it is a high-speed switching and motor driver application device.

Dissipation specs

The power dissipation value of IRF830 MOSFET is 74W, this may be calculated by the device package.

Drain to source on-state resistance

The drain to source on-state resistance is 1.5Ω, the resistance value is important at the circuit level.

Maximum temperature

The maximum temperature of the IRF830 MOSFET is –55 to +150℃, this may be calculated with the junction and storage temperature of the device.

Thermal resistance junction to ambient

The thermal resistance of IRF830 MOSFET is 62℃/W.

Total gate charge

The total gate charge value of IRF830 MOSFET is 38Nc.

Rise time

The rise time value for IRF830 MOSFET is 16ns, it had a small switching time

Input capacitance

The input capacitance of IRF830 MOSFET is 610Pf, it may be important at the circuit level.


If you need the datasheet in pdf please click this link


IRF830 high voltage MOSFET have equivalent devices such as IRF830S, IRF830F1, STP5NA50, 2SK1156, 2SK1232, IRF832, 2SK2115, IRF840, IRFBC40A and FTK480.

Each of these MOSFET devices has the same set of electrical specifications, so we can use it as the equivalent device.

The specifications such as voltage values, current values, and on-state resistance are been important for high-speed switching and controlling applications, so check and verify these specs of each device before the replacement process.

IRF830 vs 2SK1155 vs BUZ42

Here in this table, we listed the electrical specifications of IRF830, 2SK1155, and BUZ42 MOSFET devices.

Drain to source  voltage (VDS))500V450V500V
Gate to source voltage (Vgs)20V30V20V
Gate threshold voltage (Vg(th))2 to 4V2 to 3V2.1A to 4V
Drain current (Id)4.5A5A4A
Pulsed drain current18A20A16A
Total gate charge (Qg)38nC--
Power dissipation (PD)74W50W75W
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55  to +150°C
Drain to source on-state resistance (RDS)1.5Ω-1.6 to 2Ω
Rise time (tr)16ns25ns50 to 70ns
Reverse recovery time (trr)320 to 640ns300ns300ns
Input capacitance610pf640pf900pf
Output capacitance160pf160pf100pf

IRF830 MOSFET graphical curves

output characteristics of IRF830
output characteristics of IRF830

The figure shows the output characteristics of IRF830 MOSFET, it is plotted with drain current vs drain to source voltage.

At the different gate-to-source voltage values, the drain current increases from a lower value to a higher value with respect to drain-to-source voltage. And then after a particular value, the current value will increase constantly.

maximum safe operating area characteristics of IRF830
maximum safe operating area characteristics of IRF830

The figure shows the maximum safe operating area characteristics of IRF830 MOSFET, the graph plots with drain current, drain to source voltage, on-state resistance, and switching speed.

This graphical representation gives us an idea about the working and the limitation of the MOSFET works under different conditions.

IRF830 applications

  • Switching device
  • Inverter circuit
  • DC-DC converter circuit
  • Speed control motor device
  • Flasher circuit
  • High-speed switching circuit
  • BMS device
  • Solar power applications
  • AC & DC driver applications
  • UPS circuits
  • Amplifier circuits

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