IRF740 MOSFET specification
- IRF740 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 400V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 10A
- Pulsed drain current (IDM) is 40A
- Power dissipation is (PD) is 125W
- Total gate charge (Qg) is 63nC
- Drain to source on-state resistance (RDS (ON)) 55Ω
- Zero gate voltage drain current (IDSS) is 25 to 250uA
- Rise time (tr) is 27ns
- Peak diode recovery dv/dt is 4V/ns
- Thermal resistance junction to ambient (Rth j-A) is 62℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 370 to 790ns
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Low on-state resistance
IRF740 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||GATE||In the source, terminal current flows out from the MOSFET|
|2||DRAIN||The terminal is used to trigger the MOSFET device|
|3||SOURCE||The drain is the input terminal of the MOSFET|
IRF740 MOSFET package
The IRF740 MOSFET device had a TO-220AB package, it is a powerful device that may be bulkier and less weight.
The TO-220AB is a package mainly made with epoxy/plastic material for heat resistance properties and the back portion is made with metal material.
We know IRF740 MOSFET is a through-hole power device commonly used for power switching and driver applications, so the metal portion is used to attach a heat sink with it for transferring heat.
IRF740 MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of IRF740 MOSFET, the specs explanation will be really helpful for a better understanding of this device for the replacement process.
The terminal voltage specs of IRF740 MOSFET are a drain to source voltage is 400V and gate to source voltage is 20V, it had a higher value at voltage specifications.
The gate to source threshold voltage is 2V to 4V, it is the trigger voltage of the MOSFET device.
The overall voltage specs of IRF740 MOSFET show that it is a high voltage device mainly used for power supply, power conversion, and driver applications.
The drain current value of IRF740 MOSFET is 10A, and the current values of the device show the load capacity of the device at circuits.
The pulsed drain current is 40A, and the pulsed current of the device is always 3times larger than the normal current.
The current values of MOSFET show that it is a device mainly used for driver and battery charger applications.
Zero gates voltage drain current
The value for zero gate voltage drain current is 25 to 250uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.
The power dissipation value of IRF740 MOSFET is 125W, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 0.55Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the IRF740 MOSFET is –55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of IRF740 MOSFET is 62℃/W
Total gate charge
The total gate charge value of IRF740 is 63nC, it is the charge needed to trigger the MOSFET.
The rise time value for IRF740 MOSFET is 27ns, it is the switching time offered by the MOSFET.
The input capacitance value of IRF740 MOSFET is 1400pF, it is a higher value compared with other devices.
IRF740 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF740 MOSFET EQUIVALENT
The MOSFET devices such as IRF740A, UF450A, 2SK1400A, IRF740S, BUZ61A, and SSF13N15 are the equivalents of IRF740 MOSFET devices.
The electrical specifications of all these MOSFET devices are the same as IRF740, this is helpful for the replacement process.
Before the replacement, we need to check and verify the PINOUT details of each MOSFET, because the circuits based on these MOSFET are power systems.
IRF740 vs IRF840 vs IRF540
In this table we try to compare three almost similar MOSFET device electrical specifications, this comparison is really helpful for a better understanding of these MOSFETs.
|Drain to source voltage (VDS))||400V||500V||100V|
|Gate to source voltage (Vgs)||20V||20V||20V|
|Gate threshold voltage (Vg(th))||2 to 4V||2 to 4V||2 to 4V|
|Drain current (Id)||10A||8A||28A|
|Zero gate voltage drain current (IDSS)||25 to 250uA||25 to 250uA||25 to 250uA|
|Total gate charge (Qg)||63nC||63nC||72nC|
|Power dissipation (PD)||125W||125W||150W|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||0.55Ω||0.85Ω||0.077Ω|
|Rise time (tr)||27ns||23ns||44ns|
|Reverse recovery time (trr)||370 to 790ns||460 to 970ns||180 to 360ns|
The IRF740 and IRF840 MOSFETs had almost similar electrical specifications, this is why they are been used for similar applications.
The IRF540 is a much different device compared to these two MOSFETs, this is because they had low voltage specs and higher current specs.
Characteristics curves of IRF740 MOSFET
The figure shows the output characteristics of IRF740 MOSFET, the graph is plotted with drain current vs drain to source voltage.
At the different gate to source voltage values, the drain current curves are plots with respect to drain to source voltage.
Initial stages the current value increases towards a low value and then it became constant at the end.
The figure shows the on-state resistance of the IRF740 MOSFET, the graph is plotted with on-state resistance vs junction temperature.
At the fixed drain current and gate to source voltage values, the on-state resistance increases from the lowest value to higher.
Applications of IRF740 MOSFET
- SMPS system
- Inverter systems
- UPS systems
- DC-DC converter
- Speed control motor system
- LED dimmer circuits
- Embedded project applications
- Motor driver circuits
- Battery charger circuits