IRF730 MOSFET specification
- It is an N-channel MOSFET
- Drain to source voltage (Vds) is 400V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 4V
- Drain current (Id) is 5A
- Pulsed drain current (IDM) is 22A
- Power dissipation is (Pd) is 74W
- Drain to source on-state resistance (RDS) 1ohm
- Zero gate voltage drain current (IDSS) 250uA
- The total gate charge (Qg) is 18Nc
- Peak diode recovery (dv/dt) is 4v/ns
- Rise time (tr) is 38ns
- Junction temperature (TJ) is between 150℃
IRF730 MOSFET Pinout
|Gate will trigger the MOSFET device
|Current flows through the drain
|Current flows through the source
IRF730 MOSFET package
The MOSFET package used at IRF730 is TO-220AB, it is a package mainly used for high-power semiconductor devices.
The TO-220AB package major portion is made with epoxy and plastic material, then heat sink attaching portion is made with metal, this will help to transfer the heat towards outside.
IRF730 MOSFET specification description
The IRF730 is a fast switching MOSFET device, in this section we try to explain the electrical specification separately with application explanation.
The voltage specs of IRF730 will be, Drain to source voltage is 400v, the gate to source voltage is 20v and the gate threshold voltage is 4v, the voltage values will show that it is a medium power fast switching device.
The drain current value is 5.5A, the current capacity of a semiconductor device means the load withstanding capability.
The power dissipation of IRF730 MOSFET is 74W, the dissipation value means the heat capacity of a device.
Drain to source on-state resistance
The drain to source on-state resistance will be 1ohm, this is the overall resistance the IRF730 MOSFET can offer.
Zero gates voltage drain current
The zero gate voltage drain current value is 250Ua.
The junction temperature of IRF730 MOSFET is 150℃.
IRF730 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF730 MOSFET equivalent
The IRF730 MOSFET had the equivalent MOSFETs such as IRF740, IRF840, IRFB13N50A, IRFB9N65A, and STP7NA40.
Each of the MOSFETs in this list had almost the same electrical and physical specification, we can use any of these MOSFETs as the equivalent for IRF730.
IRF730 vs IRF740 vs IRFB9N65A
The table below is the comparison between IRF730 vs IRF740 vs IRFB9N65A, in this table, we try to list the main electrical specs.
|Drain to source voltage (Vds)
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|Drain current (Id)
|Total gate charge (Qg)
|Junction temperature (TJ)
|Drain to source on-state resistance (RDS)
|Rise time (tr)
The comparison table between IRF730 vs IRF740 vs IRFB9N65A shows that IRF730 and IRF740 had almost the same electrical specs.
The drain current and power dissipation of IRF740 MOSFET are higher than IRF730.
And the IRFB9N65A MOSFET is the high rated device in this list, the voltage specs and power dissipation value is high at this MOSFET than the other two.
Application of IRF730 MOSFET
- Communication systems
- Driving circuits
- Switching applications
Characteristics curves of IRF730 MOSFET
The figure shows the output characteristics of IRF730 MOSFET, and the graph is plotted between drain current vs drain to source voltage.
The graph shows that at each drain voltage value, the drain current increases with a fixed rate, and the curve shows it becomes a constant at the end.
The figure shows the safe operating area of IRF730 MOSFET, the graph will be plotted with different electrical specs such as drain current, drain to source voltage, and drain to source on-state resistance.