IRF730 MOSFET

IRF730 MOSFET specification

• It is an N-channel MOSFET
• Drain to source voltage (V_ds) is 400V
• Gate to source voltage (V_gs) is +/- 20V
• Gate to the threshold voltage (V_{g (th)}) is 4V
• Drain current (I_d) is 5A
• Pulsed drain current (I_DM) is 22A
• Power dissipation is (P_d) is 74W
• Drain to source on-state resistance (R_DS) 1ohm
• Zero gate voltage drain current (I_DSS) 250uA
• The total gate charge (Q_g) is 18Nc
• Peak diode recovery (dv/dt) is 4v/ns
• Rise time (tr) is 38ns
• Junction temperature (T_J) is between 150℃

IRF730 MOSFET Pinout

Pin Number	Pin Name	Description
1	Gate	Gate will trigger the MOSFET device
2	Drain	Current flows through the drain
3	Source	Current flows through the source

 

IRF730 MOSFET package

The MOSFET package used at IRF730 is TO-220AB, it is a package mainly used for high-power semiconductor devices.

The TO-220AB package major portion is made with epoxy and plastic material, then heat sink attaching portion is made with metal, this will help to transfer the heat towards outside.

IRF730 MOSFET specification description

The IRF730 is a fast switching MOSFET device, in this section we try to explain the electrical specification separately with application explanation.

Voltage specs

The voltage specs of IRF730 will be, Drain to source voltage is 400v, the gate to source voltage is 20v and the gate threshold voltage is 4v, the voltage values will show that it is a medium power fast switching device.

Current specs

The drain current value is 5.5A, the current capacity of a semiconductor device means the load withstanding capability.

Dissipation specs

The power dissipation of IRF730 MOSFET is 74W, the dissipation value means the heat capacity of a device.

Drain to source on-state resistance

The drain to source on-state resistance will be 1ohm, this is the overall resistance the IRF730 MOSFET can offer.

Zero gates voltage drain current

The zero gate voltage drain current value is 250Ua.

Junction temperature

The junction temperature of IRF730 MOSFET is 150℃.

IRF730 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRF730 MOSFET equivalent

The IRF730 MOSFET had the equivalent MOSFETs such as IRF740, IRF840, IRFB13N50A, IRFB9N65A, and STP7NA40.

Each of the MOSFETs in this list had almost the same electrical and physical specification, we can use any of these MOSFETs as the equivalent for IRF730.

IRF730 vs IRF740 vs IRFB9N65A

The table below is the comparison between IRF730 vs IRF740 vs IRFB9N65A, in this table, we try to list the main electrical specs.

Characteristics	IRF730	IRF740	IRFB9N65A
Drain to source voltage (Vds)	400V	400V	650V
Gate to source voltage (Vgs)	20V	20V	30V
Gate threshold voltage (Vg(th))	4V	5V	5V
Drain current (Id)	5.5A	10A	8.5A
Total gate charge (Qg)	38nC	63nC	48nC
Power dissipation	74W	125W	167W
Junction temperature (TJ)	150°C	150°C	150°C
Drain to source on-state resistance (RDS)	1ohm	0.55ohm	0.93mohm
Rise time (tr)	38ns	27ns	48ns
Package	TO-220AB	TO-220AB	TO-220AB

The comparison table between IRF730 vs IRF740 vs IRFB9N65A shows that IRF730 and IRF740 had almost the same electrical specs.

The drain current and power dissipation of IRF740 MOSFET are higher than IRF730.

And the IRFB9N65A MOSFET is the high rated device in this list, the voltage specs and power dissipation value is high at this MOSFET than the other two.

Application of IRF730 MOSFET

• Communication systems
• Driving circuits
• Switching applications

Characteristics curves of IRF730 MOSFET

The figure shows the output characteristics of IRF730 MOSFET, and the graph is plotted between drain current vs drain to source voltage.

The graph shows that at each drain voltage value, the drain current increases with a fixed rate, and the curve shows it becomes a constant at the end.

The figure shows the safe operating area of IRF730 MOSFET, the graph will be plotted with different electrical specs such as drain current, drain to source voltage, and drain to source on-state resistance.