- IRF640 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 18A
- Pulsed drain current (IDM) is 72A
- Power dissipation (PD) is 125W
- Total gate charge (Qg) is 55 to 72nC
- Drain to source on-state resistance (RDS (ON)) 15 to 0.18Ω
- Zero gate voltage drain current (IDSS) is 25 to 250uA
- Rise time (tr) is 27 to 35ns
- Peak diode recovery dv/dt is 5V/ns
- Thermal resistance junction to case (Rth j-C) is 1℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 240ns
- Input capacitance is 1200 to 1560pf
- Output capacitance is 200 to 260pf
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Low intrinsic capacitance
- Gate charge minimized
- Low on-resistance
- Low thermal resistance
|The gate terminal will be used to trigger the MOSFET device
|The drain is the input terminal of the MOSFET
|In the source, terminal current flows out from the MOSFET
IRF640 MOSFET package
The IRF640 N-Channel MOSFET has a TO-220 package, these packages are been mainly used for power devices like MOSFETs.
TO-220 package is made with epoxy/plastic material, due to this reason heat resistance property of the device increases and the total device is lite weighted and compact as an electronic component.
The back portion of the TO-220 package is coated with metal material, this portion is used to transfer the heat towards the heat sink attached to it.
IRF640 N-channel POWER MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of the IRF640 N-channel MOSFET device, the description helps us to know more about this device and support us in the replacement process.
The voltage specs of IRF640 MOSFET are a drain to source voltage is 200V, the gate to source voltage +/-20V, and the gate threshold voltage is 2, 3, and 4V. The voltage specs of this are higher.
Overall voltage specifications of IRF640 MOSFET show that it is a high-voltage device that has many applications.
The drain current value is 18A and the maximum pulsed drain current is 72A, the current value of the semiconductor device shows the load capacity at the application.
The power dissipation value of IRF640 MOSFET is 125W, and the dissipation capacity of the device is been mainly depends on the device package.
Drain to source on-state resistance
The drain to source on-state resistance is 0.15 to 0.18Ω, the resistance value offered at the device.
Junction temperature/ storage temperature
The junction temperature/storage temperature of the IRF640 MOSFET is –55 to +150℃.
Thermal resistance junction to case
The thermal resistance of IRF640 MOSFET is between junctions to case 1℃/W
Total gate charge
The total gate charge value of IRF640 is 55 to 72nC.
The rise time value for IRF640 MOSFET is 27 to 35ns, it is the switching time interval at the device.
The input capacitance value of IRF640 MOSFET is 1200 to 1560pf.
The output capacitance value of IRF640 MOSFET is 200 to 260pf
IRF640 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
The IRF640 N-channel MOSFET has equivalent MOSFET devices such as YTA640, IRF642, 2SK740, 2SK891, IRFB5620, and BUZ30A. Each of these MOSFET devices has almost the same electrical and physical characteristics.
We can easily replace these devices at the place of IRF640 MOSFET and also check and verify the PINOUT and voltage value because both these specs will become dangerous at the circuit level.
IRF640 vs IRF740 vs IRF640N
In this table, we try to compare the electrical characteristics of IRF640, IRF740, and IRF640N, this comparison is really helpful for the replacement process.
|Drain to source voltage (VDS))
|Gate to source voltage (VGS)
|The gate threshold voltage (VG(th))
|2, 3 to 4V
|2 to 4V
|2 to 4V
|Drain current (ID)
|Pulsed drain current
|Zero gate voltage drain current (IDSS)
|25 to 250uA
|25 to 250uA
|25 to 250uA
|Total gate charge (Qg)
|55 to 72nC
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|-55 to +175°C
|Drain to source on-state resistance (RDS)
|0.15 to 0.18Ω
|Rise time (tr)
|27 to 35ns
|Reverse recovery time (trr)
|370 to 790ns
|167 to 251ns
|1200 to 1560pf
|200 to 260pf
Characteristics curves of IRF640 MOSFET
The figure shows the output characteristics of IRF640 MOSFET, the graph is plotted with drain current vs drain to source voltage.
At the different gates to source voltage values, IRF640 MOSFET produces different curves and at the highest voltage value, the drain current becomes infinite.
The figure shows the maximum safe operating area of IRF640 MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, switching pulses, and temperature values.
Applications of IRF640 MOSFET
- Battery management system (BMS)
- Solar power supply circuit
- Fast switching applications
- Motor control driver applications