IRF640 specification

  • IRF640 is an N-channel POWER MOSFET device
  • Drain to source voltage (VDS) is 200V
  • Gate to source voltage (VGS) is +/- 20V
  • Gate to the threshold voltage (VGS (th)) is 2V to 4V
  • Drain current (Id) is 18A
  • Pulsed drain current (IDM) is 72A
  • Power dissipation (PD) is 125W
  • Total gate charge (Qg) is 55 to 72nC
  • Drain to source on-state resistance (RDS (ON)) 15 to 0.18Ω
  • Zero gate voltage drain current (IDSS) is 25 to 250uA
  • Rise time (tr) is 27 to 35ns
  • Peak diode recovery dv/dt is 5V/ns
  • Thermal resistance junction to case (Rth j-C) is 1℃/W
  • Junction temperature (TJ) is between -55 to 150℃
  • Body diode reverse recovery (trr) 240ns
  • Input capacitance is 1200 to 1560pf
  • Output capacitance is 200 to 260pf
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirement
  • Low intrinsic capacitance
  • Gate charge minimized
  • Low on-resistance
  • Cost-effective
  • Low thermal resistance

IRF640 Pinout

IRF640 Pinout
IRF640 Pinout
Pin Number Pin Name Description
1 GATE The gate terminal will be used to trigger the MOSFET device
2 DRAIN The drain is the input terminal of the MOSFET
3 SOURCE In the source, terminal current flows out from the MOSFET 


IRF640 MOSFET package

The IRF640 N-Channel MOSFET has a TO-220 package, these packages are been mainly used for power devices like MOSFETs.

TO-220 package is made with epoxy/plastic material, due to this reason heat resistance property of the device increases and the total device is lite weighted and compact as an electronic component.

The back portion of the TO-220 package is coated with metal material, this portion is used to transfer the heat towards the heat sink attached to it.

IRF640 N-channel POWER MOSFET electrical specification explanation 

In this section we try to explain the electrical specifications of the IRF640 N-channel MOSFET device, the description helps us to know more about this device and support us in the replacement process.

Voltage specs

The voltage specs of IRF640 MOSFET are a drain to source voltage is 200V, the gate to source voltage +/-20V, and the gate threshold voltage is 2, 3, and 4V. The voltage specs of this are higher.

Overall voltage specifications of IRF640 MOSFET show that it is a high-voltage device that has many applications.

Current specs

The drain current value is 18A and the maximum pulsed drain current is 72A, the current value of the semiconductor device shows the load capacity at the application.

Dissipation specs

The power dissipation value of IRF640 MOSFET is 125W, and the dissipation capacity of the device is been mainly depends on the device package.

Drain to source on-state resistance

The drain to source on-state resistance is 0.15 to 0.18Ω, the resistance value offered at the device.

Junction temperature/ storage temperature

The junction temperature/storage temperature of the IRF640 MOSFET is –55 to +150℃.

Thermal resistance junction to case

The thermal resistance of IRF640 MOSFET is between junctions to case 1℃/W

Total gate charge

The total gate charge value of IRF640 is 55 to 72nC.

Rise time

The rise time value for IRF640 MOSFET is 27 to 35ns, it is the switching time interval at the device.

Input capacitance

The input capacitance value of IRF640 MOSFET is 1200 to 1560pf.

Output capacitance

The output capacitance value of IRF640 MOSFET is 200 to 260pf


If you need the datasheet in pdf please click this link


The IRF640 N-channel MOSFET has equivalent MOSFET devices such as YTA640, IRF642, 2SK740, 2SK891, IRFB5620, and BUZ30A. Each of these MOSFET devices has almost the same electrical and physical characteristics.

We can easily replace these devices at the place of IRF640 MOSFET and also check and verify the PINOUT and voltage value because both these specs will become dangerous at the circuit level.

IRF640 vs IRF740 vs IRF640N

In this table, we try to compare the electrical characteristics of IRF640, IRF740, and IRF640N, this comparison is really helpful for the replacement process.

Drain to source  voltage (VDS))200V400V200V
Gate to source voltage (VGS)20V20V20V
The gate threshold voltage (VG(th))2, 3 to 4V2 to 4V2 to 4V
Drain current (ID)18A10A18A
Pulsed drain current72A40A72A
Zero gate voltage drain current (I­DSS)25 to 250uA25 to 250uA25 to 250uA
Total gate charge (Qg)55 to 72nC63nC67nC
Power dissipation (PD)125W125W150W
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55  to +175°C
Drain to source on-state resistance (RDS)0.15 to 0.18Ω0.55Ω0.15Ω
Rise time (tr)27 to 35ns27ns19ns
Reverse recovery time (trr)240ns370 to 790ns167 to 251ns
Input capacitance1200 to 1560pf1400pf1160pf
Output capacitance200 to 260pf330pf1850pf

Characteristics curves of IRF640 MOSFET

output characteristics of IRF640
output characteristics of IRF640

The figure shows the output characteristics of IRF640 MOSFET, the graph is plotted with drain current vs drain to source voltage.

At the different gates to source voltage values, IRF640 MOSFET produces different curves and at the highest voltage value, the drain current becomes infinite.

maximum safe operating area of IRF640
maximum safe operating area of IRF640

The figure shows the maximum safe operating area of IRF640 MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, switching pulses, and temperature values.

Applications of IRF640 MOSFET

  • Battery management system (BMS)
  • Solar power supply circuit
  • Fast switching applications
  • Motor control driver applications
  • UPS  

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