IRF634 MOSFET
IRF634 specification
- IRF634 is an N-channel POWER MOSFET
- Drain to source voltage (VDS) is 250V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 1A
- Pulsed drain current (IDM) is 32A
- Power dissipation (PD) is 74W
- Total gate charge (Qg) is 41nC
- Drain to source on-state resistance (RDS (ON)) 045Ω
- Rise time (tr) is 21ns
- Peak diode recovery dv/dt is 8V/ns
- Thermal resistance junction to case (Rth j-C) is 7℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 220 to 440ns
- Input capacitance is 770pf
- Output capacitance is 190pf
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
IRF634 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF634 package
IRF634 is a POWER MOSFET device that had a TO-220AB package, it is a three-terminal package made of epoxy/plastic material.
TO-220AB package offers higher temperature-withstanding capacity within a compact outer covering.
TO-220AB is a through-hole bulkier package, so we need to attach a heat sink to it.
IRF634 electrical specification explanation & application note
Here we explain the electrical specifications of IRF634 MOSFET, this explanation is really useful for a better understanding
Voltage specs
The voltage specifications of IRF634 MOSFET are a drain-to-source voltage is 250V, a gate-to-source voltage is 20V, and gate threshold voltage is 2V and 4V.
The terminal and switching voltage specs of IRF634 MOSFET indicate that it is a higher voltage device that had multiple power-related applications.
Current specs
The current value of IRF634 MOSFET is 8.1A and the pulsed drain current value is 32A, the current specifications of this device show, it is a higher ability to withstand higher loads.
Dissipation specs
The dissipation ability of IRF634 MOSFET is 74W, it is the product of voltage and current transferring at the device.
The power dissipation of this device is mainly depended on the device package.
Drain to source on-state resistance
The drain to source on-state resistance is 0.45Ω, it is the total resistance value offered by the IRF634 MOSFET.
Junction temperature/storage temperature
The junction temperature/storage of the IRF634 MOSFET is –55 to +150℃, it is the total temperature capacity of the device.
Thermal resistance, junction to case
The thermal resistance, junction to the case of IRF634 MOSFET is 1.7℃/W
Total gate charge
The total gate charge of IRF634 MOSFET is 41Nc.
Rise time
The rise time value at IRF634 MOSFET is 21ns, it is the switching speed offered by this device.
Input capacitance
The input capacitance of IRF634 MOSFET is 770pF, the input capacitance value of the device is very important for circuit application.
Output capacitance
The output capacitance value of IRF634 MOSFET is 190pf
IRF634 DATASHEET
If you need the datasheet in pdf please click this link
IRF634 EQUIVALENT
IRF634 MOSFET has equivalent devices such as IRF644, IRFB13NS04, IRF034, IRF054, and IRF054SMD, most of the electrical specifications are the same.
We need to check and verify some of the important specs such as voltage, PINOUT details, and current because this is an important criteria to consider for some of the applications.
IRF634 vs IRF644 vs IRF034
| Characteristics | IRF634 | IRF644 | IRF034 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 250V | 250V | 60V |
| Gate to source voltage (Vgs) | 20V | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V | 2 to 4V |
| Drain current (ID) | 8.1A | 14A | 25A |
| Pulsed drain current | 32A | 56A | 100A |
| Total gate charge (Qg) | 41nC | 60nC | 21 to 47nC |
| Power dissipation (PD) | 74W | 125W | 75W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Drain to source on-state resistance (RDS) | 0.45Ω | 0.28Ω | 0.050 to 0.058Ω |
| Rise time (tr) | 21ns | 24ns | 110ns |
| Reverse recovery time (trr) | 220 to 440ns | 250 to 500ns | 220ns |
| Input capacitance | 770pf | 1300pf | 1300pf |
| Output capacitance | 190pf | 330pf | 650pf |
| Package | TO-220AB | TO-220AB | TO-220AB |
IRF634 MOSFET graphical characteristics
The graph shows the output characteristics of IRF634 MOSFET, the graph plots with drain current vs drain to source voltage.
The drain current characteristics increase initially and become constant, then it constantly increases towards infinity.
The graph shows the safe operating area characteristics of IRF634 MOSFET, this graph plots drain vs drain to source voltage, switching speed, and on-state resistance.
IRF634 MOSFET applications
- DC/DC converter circuit apps
- AC/DC converter circuit
- SMPS circuit
- Power supply applications
- Fast switching circuit
- Industrial purpose circuit applications
- High-efficiency circuit applications
- Switching circuit
