IRF630 POWER MOSFET specification
- IRF630 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 9A
- Pulsed drain current (IDM) is 36A
- Power dissipation (PD) is 74W
- Total gate charge (Qg) is 43nC
- Drain to source on-state resistance (RDS (ON)) 40Ω
- Zero gate voltage drain current (IDSS) is 25 to 250uA
- Rise time (tr) is 28ns
- Peak diode recovery dv/dt is 5V/ns
- Thermal resistance junction to ambient (Rth j-A) is 62℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 170 to 340ns
- Input capacitance is 800pf
- Output capacitance is 240pf
- Extremely high dv/dt capacity
- Very low intrinsic capacitance
- Gate charge minimized
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- High efficiency
- Ruggedized device design
- Low on-resistance
- Low thermal resistance
IRF630 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal will be used to trigger the MOSFET device|
|2||DRAIN||The drain is the input terminal of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
IRF630 MOSFET package
The IRF630 MOSFET have a TO-220AB package, it is a package mainly used for power device such as MOSFETs.
TO-220AB is a power device package made with a combination of epoxy/ plastic material and the back side is made with metal, the usage of epoxy is for enhancing thermal capacity and lower heaviness.
The metal covering at the back side of TO-220AB is used for the heat transferring feature, this is how IRF630 MOSFET becomes capable of high power capacity device.
IRF630 POWER MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of IRF630 MOSFET, this description is really helpful for a better understanding of this device.
The terminal voltage specs of IRF630 MOSFET are the drain to source voltage is 200V, the gate to source voltage is +/-20V, and gate to source threshold voltage is 2V to 4V.
The voltage specifications of IRF630 MOSFET shows that it is a power device which had more power applications.
The drain current value IRF630 MOSFET is 9A and the pulsed drain current value is 36A.
The overall current specifications of IRF630 MOSFET show that it is a powerful device that has a driver and switching applications.
Zero gates voltage drain current
The value for zero gate voltage drain current is 25 to 250uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.
The power dissipation value of IRF630 MOSFET is 74W, the power dissipation capacity of the device shows that it had more applications for power switching and power supply applications.
Drain to source on-state resistance
The drain to source on-state resistance is 0.40Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the IRF630 MOSFET is –55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of IRF630 MOSFET is 62℃/W
Total gate charge
The total gate charge value of IRF630 is 43nC, this particular device had a feature which is the minimum gate charge value.
The rise time value for IRF630 MOSFET is 28ns, it is the switching time offered by the MOSFET.
The input capacitance value of IRF630 MOSFET is 800pF, this MOSFET had a minimum capacitance value compared with other devices.
The output capacitance value of IRF630 MOSFET is 240pf
IRF630 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF630 MOSFET EQUIVALENT
The IRF630 MOSFET equivalents such as IRF640, IRF644, IRFB17N50L, 2SK1957, 2SK2212, IRFS631, IRF1630G, and BUK454-200B.
These MOSFET devices have the same electrical specifications, so we can use them as the equivalent of IRF630 MOSFET at circuits.
IRF630 vs IRF740 vs IRF644
In this table, we try to compare the electrical specifications of three MOSFET devices such as IRF630, IRF740, and IRF644, this spec comparison is really helpful for a better understanding of devices.
|Drain to source voltage (VDS))||200V||400V||250V|
|Gate to source voltage (Vgs)||20V||20V||20V|
|Gate threshold voltage (Vg(th))||2 to 4V||2 to 4V||2 to 4V|
|Drain current (Id)||9A||10A||14A|
|Pulsed drain current||36A||40A||56A|
|Zero gate voltage drain current (IDSS)||25 to 250uA||25 to 250uA||25 to 250uA|
|Total gate charge (Qg)||43nC||63nC||68nC|
|Power dissipation (PD)||74W||125W||125W|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||0.40Ω||0.55Ω||0.28Ω|
|Rise time (tr)||28ns||27ns||24ns|
|Reverse recovery time (trr)||170 to 340ns||370 to 790ns||250 to 500ns|
Characteristics curves of IRF630 MOSFET
The figure shows the output characteristics of IRF630 MOSFET, the graph is plotted with drain current vs drain to source voltage.
At the different gates to source voltage variations and fixed temperature values, the drain current will increase towards a limit and become constant, this is the happened at all the values.
The figure shows the maximum safe operating area of IRF630 MOSFET, the graph plots with different variations such as drain current, drain to source voltage, junction temperature, switching speed, and on-state resistance.
From the graph we can see different variations of IRF630 MOSFET, so we can use this data for different applications.
Applications of IRF630 MOSFET
- Switching applications
- DC-DC converter
- Commercial industrial applications
- Solar power supply applications
- Motor drivers
- Battery charger
- High-speed switching applications
- Power management system
- Portable device