IRF630 MOSFET

IRF630 POWER MOSFET specification

• IRF630 is an N-channel POWER MOSFET device
• Drain to source voltage (V_DS) is 200V
• Gate to source voltage (V_GS) is +/- 20V
• Gate to the threshold voltage (V_{GS (th)}) is 2V to 4V
• Drain current (I_d) is 9A
• Pulsed drain current (I_DM) is 36A
• Power dissipation (P_D) is 74W
• Total gate charge (Q_g) is 43nC
• Drain to source on-state resistance (R_{DS (ON)}) 40Ω
• Zero gate voltage drain current (I_DSS) is 25 to 250uA
• Rise time (tr) is 28ns
• Peak diode recovery dv/dt is 5V/ns
• Thermal resistance junction to ambient (R_th j-A) is 62℃/W
• Junction temperature (T_J) is between -55 to 150℃
• Body diode reverse recovery (trr) 170 to 340ns
• Input capacitance is 800pf
• Output capacitance is 240pf
• Extremely high dv/dt capacity
• Very low intrinsic capacitance
• Gate charge minimized
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement
• High efficiency
• Ruggedized device design
• Low on-resistance
• Cost-effectiveness
• Low thermal resistance

IRF630 MOSFET Pinout

Pin Number	Pin Name	Description
1	GATE	The gate terminal will be used to trigger the MOSFET device
2	DRAIN	The drain is the input terminal of the MOSFET
3	SOURCE	In the source, terminal current flows out from the MOSFET

 

IRF630 MOSFET package

The IRF630 MOSFET have a TO-220AB package, it is a package mainly used for power device such as MOSFETs.

TO-220AB is a power device package made with a combination of epoxy/ plastic material and the back side is made with metal, the usage of epoxy is for enhancing thermal capacity and lower heaviness.

The metal covering at the back side of TO-220AB is used for the heat transferring feature, this is how IRF630 MOSFET becomes capable of high power capacity device.

IRF630 POWER MOSFET electrical specification explanation 

In this section we try to explain the electrical specifications of IRF630 MOSFET, this description is really helpful for a better understanding of this device.

Voltage specs

The terminal voltage specs of IRF630 MOSFET are the drain to source voltage is 200V, the gate to source voltage is +/-20V, and gate to source threshold voltage is 2V to 4V.

The voltage specifications of IRF630 MOSFET shows that it is a power device which had more power applications.

Current specs

The drain current value IRF630 MOSFET is 9A and the pulsed drain current value is 36A.

The overall current specifications of IRF630 MOSFET show that it is a powerful device that has a driver and switching applications.

Zero gates voltage drain current

The value for zero gate voltage drain current is 25 to 250uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.

Dissipation specs

The power dissipation value of IRF630 MOSFET is 74W, the power dissipation capacity of the device shows that it had more applications for power switching and power supply applications.

Drain to source on-state resistance

The drain to source on-state resistance is 0.40Ω, it is the overall resistance offered by the MOSFET.

Junction temperature

The junction temperature of the IRF630 MOSFET is –55 to +150℃.

Thermal resistance junction to ambient

The thermal resistance of IRF630 MOSFET is 62℃/W

Total gate charge

The total gate charge value of IRF630 is 43nC, this particular device had a feature which is the minimum gate charge value.

Rise time

The rise time value for IRF630 MOSFET is 28ns, it is the switching time offered by the MOSFET.

Input capacitance

The input capacitance value of IRF630 MOSFET is 800pF, this MOSFET had a minimum capacitance value compared with other devices.

Output capacitance

The output capacitance value of IRF630 MOSFET is 240pf

IRF630 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRF630 MOSFET EQUIVALENT

The IRF630 MOSFET equivalents such as IRF640, IRF644, IRFB17N50L, 2SK1957, 2SK2212, IRFS631, IRF1630G, and BUK454-200B.

These MOSFET devices have the same electrical specifications, so we can use them as the equivalent of IRF630 MOSFET at circuits.

IRF630 vs IRF740 vs IRF644

In this table, we try to compare the electrical specifications of three MOSFET devices such as IRF630, IRF740, and IRF644, this spec comparison is really helpful for a better understanding of devices.

Characteristics	IRF630	IRF740	IRF644
Drain to source  voltage (VDS))	200V	400V	250V
Gate to source voltage (Vgs)	20V	20V	20V
Gate threshold voltage (Vg(th))	2 to 4V	2 to 4V	2 to 4V
Drain current (Id)	9A	10A	14A
Pulsed drain current	36A	40A	56A
Zero gate voltage drain current (I­DSS)	25 to 250uA	25 to 250uA	25 to 250uA
Total gate charge (Qg)	43nC	63nC	68nC
Power dissipation (PD)	74W	125W	125W
Junction temperature (TJ)	-55 to +150°C	-55 to +150°C	-55  to +150°C
Drain to source on-state resistance (RDS)	0.40Ω	0.55Ω	0.28Ω
Rise time (tr)	28ns	27ns	24ns
Reverse recovery time (trr)	170 to 340ns	370 to 790ns	250 to 500ns
Input capacitance	800pf	1400pf	1300pf
Output capacitance	240pf	330pf	330pf
Package	TO-220AB	TO-220AB	TO-220AB

Characteristics curves of IRF630 MOSFET

The figure shows the output characteristics of IRF630 MOSFET, the graph is plotted with drain current vs drain to source voltage.

At the different gates to source voltage variations and fixed temperature values, the drain current will increase towards a limit and become constant, this is the happened at all the values.

The figure shows the maximum safe operating area of IRF630 MOSFET, the graph plots with different variations such as drain current, drain to source voltage, junction temperature, switching speed, and on-state resistance.

From the graph we can see different variations of IRF630 MOSFET, so we can use this data for different applications.

Applications of IRF630 MOSFET

• Switching applications
• DC-DC converter
• Commercial industrial applications
• Solar power supply applications
• Motor drivers
• Battery charger
• Telecommunications
• High-speed switching applications
• Power management system
• Portable device
• UPS