**IRF620 MOSFET**

**IRF620 specification**

- IRF620 is an N-channel POWER MOSFET device
- Drain to source voltage (
**V**) is_{DS}**200V** - Gate to source voltage (
**V**) is_{GS}**+/- 20V** - Gate to the threshold voltage (
**V**) is_{GS (th)}**2V to 4V** - Drain current (
**I**) is_{d}**2A** - Pulsed drain current (
**I**) is_{DM}**18A** - Power dissipation (
**P**) is_{D}**50W** - Total gate charge (
**Q**) is_{g}**14nC** - Drain to source on-state resistance (
**R**)_{DS (ON)}**80Ω** - Rise time (
**tr**) is**22ns** - Thermal resistance junction to case
**(R**is_{th }j-C)**5℃/W** - Junction temperature/ storage temperature
**T**/_{J}**T**is between_{stg}**-55 to 150℃** - Body diode reverse recovery (
**trr**)**150 to 300ns** - Input capacitance is
**260pf** - Output capacitance is
**100pf** - Dynamic dv/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple driver requirement

**IRF620 Pinout**

Pin Number |
Pin Name |
Description |

1 | GATE | The gate terminal will be used to trigger the MOSFET device |

2 | SOURCE | In the source, terminal current flows out from the MOSFET |

3 | DRAIN | The drain terminal is the input of the MOSFET |

** **

**IRF620 package **

IRF620 MOSFET has a TO-220 device package, it is a three-terminal device that is mainly used for POWER applications.

TO-220 is a bulkier package made with epoxy/plastic material, this will increase the temperature capacity of the device package.

TO-220 is a through-hole package that is capable of attaching a heat sink, the material used to make the package gives the compactness for small circuit applications.

**IRF620 electrical specification explanation & application note**

**Voltage specs**

The voltage specifications of IRF620 MOSFET are a drain-to-source voltage is 200V, a gate-to-source voltage is +/-20V and a gate threshold voltage is 2V and 4V.

The voltage specs show that it is a voltage device which having higher voltage applications.

**Current specs**

The current specs show the load capacity of the MOSFET, and the drain current value of IRF620 is 5.2A.

The pulsed drain current value of IRF620 MOSFET is 18ZA, this current value is calculated at a specific condition.

**Dissipation specs**

The dissipation value of IRF620 MOSFET is 50W, and the power dissipation strength of a MOSFET is calculated by the product of the voltage and current of the device.

**Drain to source on-state resistance**

The drain-to-source on-state resistance of IRF620 MOSFET is 0.80Ω, it is the total resistance value of the MOSFET.

**Junction temperature/ storage temperature **

The junction temperature/storage temperature of the IRF620 MOSFET is –**55 to +150℃**.

**Thermal resistance junction to case **

The thermal resistance, junction to case value of MOSFET is 2.5℃/W

**Total gate charge **

The total gate charge value of MOSFET is 14nC

**Rise time **

The rise time or switching time value of IRF620 MOSFET is 22ns

**IRF620 DATASHEET **

If you need the datasheet in pdf please **click this link**

**IRF620 EQUIVALENT **

IRF620 MOSFET devices have an equivalent device such as IRF620PBF, IRF634, IRF644, IRF740, IRF740B, and IRFB9N604, each of the MOSFET have the same set of electrical specifications.

**IRF620 vs IRF630 vs IRF644**

Here in this table, we listed the electrical specifications of IRF620, IRF630, and IRF644 MOSFET devices, this specs comparison is really useful for better understanding.

Characteristics | IRF620 | IRF630 | IRF644 |
---|---|---|---|

Drain to source voltage (VDS)) | 200V | 200V | 250V |

Gate to source voltage (Vgs) | 20V | 20V | 250V |

Gate threshold voltage (Vg(th)) | 2 to 4V | 2, 3 and 4V | 2V to 4V |

Drain current (Id) | 5.2A | 9A | 14A |

Pulsed drain current | 18A | 36A | 56A |

Thermal resistance, junction to case | 2.5℃/W | 1.26℃/W | 1℃/W |

Total gate charge (Qg) | 14nC | 11.6nC | 68nC |

Power dissipation (PD) | 50W | 120W | 125W |

Junction temperature (TJ) | -55 to +150°C | -65 to +175°C | -55 to +150℃ |

Drain to source on-state resistance (RDS) | 0.80Ω | 0.029 to 0.040Ω | 0.28Ω |

Rise time (tr) | 22ns | 2.6ns | 24ns |

Reverse recovery time (trr) | 150 to 300ns | 118.5ns | 250 to 500ns |

Input capacitance | 260pf | 370pf | 1300pf |

Output capacitance | 100pf | 77pf | 330pf |

Package | TO-220AB | TO-220AB | TO-220AB |

**IRF620 graphical representations**

The graph shows the output characteristics of IRF620 MOSFET, the graph plots with drain current vs drain to source voltage.

At the initial stages the drain current increases and become constant, and then it became more infinite when the gate to source increases, the drain current increases the same as in the initial stages and becomes constant towards higher values.

The graph shows the maximum safe operating area characteristics of IRF620 MOSFET, the graph plots with drain current vs drain to source voltage, switching pulses, and on-state resistance and temperature values.

**IRF620 applications**

- Commercial switching applications
- Industrial driver applications
- Fast switching applications