- IRF5305 is a silicon-based P-channel POWER MOSFET device
- Drain to source voltage (VDS) is -55V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (ID) is -31A
- Pulsed drain current (IDM) is -110A
- Power dissipation (PD) is 110W
- Total gate charge (Qg) is 63nC
- Drain to source on-state resistance (RDS (ON)) 06Ω
- Peak diode recovery dv/dt is -5.0V/ns
- Maximum temperature value of (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 71 to 110ns
- Input capacitance is 1200pF
- Advanced process technology
- Dynamic dv/dt rating
- Fully avalanche rated
- Low on-resistance
- Ruggedized device
- Extremely efficient
- Reliable device
|The gate terminal is used to trigger the MOSFET device
|The drain is the input terminal of the MOSFET
|In the source, terminal current flows out from the MOSFET
IRF5305 is a high-power MOSFET device which having a TO-220AB component package.
TO-220AB is a three-terminal bulkier device package, it is made up of epoxy/plastic material.
TO-220AB is a through-hole package, this is why it had high-temperature sensitivity and compactness as an electronic component.
IRF5305 electrical specification explanation
Here in this section, we explain the electrical specifications of the IRF5305 transistor, this explanation is useful for a better understanding of the device for the replacement process.
The voltage specifications of IRF5305 MOSFET are a drain-to-source voltage is -55V, a gate-to-source voltage is +/-20V, and gate to source threshold voltage value between -2V to -4V.
The voltage specs of IRF5305 MOSFET show that it is a high-voltage device having switching and driver applications.
The drain current value of IRF5305 MOSFET is -31A, which is the load capacity of the device.
The pulsed drain current value of IRF5305 MOSFET is -110A, it is the maximum load capacity at pulsed condition.
Both the maximum load capacity and pulsed value of IRF5305 MOSFET show, it is a bulkier device which having more switching and driver applications.
The dissipation power of IRF5305 MOSFET is 110W, the dissipation ability of the MOSFET mainly depends on the component package.
Drain to source on-state resistance
The drain-to-source on-state resistance is 0.06Ω, and the resistance value of the device is important at the circuit level.
The junction temperature of the IRF5305 MOSFET is -55 to +175℃.
Thermal resistance junction to case
The thermal resistance value of IRF5305 MOSFET junction-to-case is between 1.4℃/W.
The capacitance value of IRF5305 MOSFET is 1200Pf, and the capacitance value of the device is reliable at the circuit level.
Reverse recovery time
The reverse recovery time value of IRF5305 MOSFET is 71 to 110ns.
If you need the datasheet in pdf please click this link
Equivalent MOSFET devices of IRF5305 are 2SJ349, 2SJ401, IRF044, IRF054, IRF100B202, IRF034, IRF1010A, and IRF100B201, each of these MOSFET devices have the same set of electrical specifications.
The specifications such as current values, voltage values, and power dissipations are important for driver applications and battery charger applications, so we need to check and verify these specs at these equivalent lists.
IRF5305 vs 2SJ349
Here in this table, we listed and compare the electrical specifications of IRF5305 and 2SJ349 MOSFET, each of them has almost the same specs, and this comparison is helpful for a better understanding.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|-2 to -4V
|-0.8 to -2V
|Drain current (Id)
|Pulsed drain current
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +175°C
|-55 to +150°C
|Thermal resistance from junction to case
|Drain to source on-state resistance (RDS)
|50 to 90mΩ
|Reverse recovery time (trr)
|71 to 110ns
Characteristics curves of IRF5305 MOSFET
The figure shows the output characteristics of IRF5305 MOSFET, the graph plots the drain to source current to drain to source voltage.
At the different gate to source voltage values, the output current curve is increasing from the lowest value to a higher value with respect to drain to source voltage.
And after a higher value, the curve becomes infinite, which means the current value increases dramatically.
The figure shows the maximum safe operating area characteristics of IRF5305 MOSFET, the curve plots with drain current, drain to source voltage, on-state resistance, and switching speed of the MOSFET device.
- Motor driver applications
- UPS circuit
- High-speed switching circuit
- Battery charger circuit applications