IRF530 MOSFET

IRF530 MOSFET specification

• IRF530 is an N-channel MOSFET device
• Drain to source voltage (V_DS) is 100V
• Gate to source voltage (V_gs) is +/- 20V
• Gate to the threshold voltage (V_{g (th)}) is 2 to 4V
• Drain current (I_d) is 14A
• Pulsed drain current (I_DM) is 56A
• Power dissipation is (P_D) is 88W
• Drain to source on-state resistance (R_{DS (ON)}) 16Ω
• Gate to source leakage current (I_GSS) is 100nA
• Total gate charge (Q_g) is 26nC
• Zero gate voltage drain current (I_DSS) is 250uA
• Reverse recovery time (trr) is 150 to 280ns
• Peak diode recovery (dv/dt) is 5V/ns
• Rise time (tr) is 34ns
• Forward turn ON time (t_on) is 85 to 1.7uc
• Thermal resistance junction to case (R_th j-c) is 7℃/W
• Junction temperature (T_J) is between -55 to 175℃

IRF530 MOSFET Pinout

Pin Number	Pin Name	Description
1	Gate	Gate will trigger the MOSFET device
2	Drain	In the drain terminal were current flows into the MOSFET
3	Source	In the source, terminal current flows out from the MOSFET

 

IRF530 MOSFET package

The IRF530 MOSFET device is made with a TO-220 package, it is a bulkier component package specially made for POWER applications.

TO-220AB package is made with three types of material, the front portion is made with epoxy and plastic for heat resistant purposes and the back portion is made with metal to act as a heat sink.

IRF530 MOSFET electrical specification description

In this section we try to explain the electrical specifications of IRF530 MOSFET, the description is very useful for application basis.

Voltage specs

The voltage specs of IRF530 MOSFET are a drain to source voltage is 100V, the gate to source voltage is 20V, and the gate threshold voltage is 2V to 4V, the terminal voltage specs show that the IRF530 had low voltage characteristics, which is apt for power supply applications.

Current specs

The IRF530 MOSFET had a collector current of 14A, which is the amount of load capacity of the device.

The pulsed collector current value is 56A, it is the number of current flows at the minimum junction temperature.

Dissipation specs

The power dissipation value of IRF530 MOSFET is 88W, it is the power dissipation capacity of the device.

Peak diode recovery

The peak diode recovery dv/dt value is 5.5 V/ns, it is the recovery time based on the imagery diode of the MOSFET.

Drain to source on-state resistance

The drain to source on-state resistance is 0.16Ω, it is the overall resistance offered by the MOSFET.

Junction temperature

The junction temperature of the IRF530 MOSFET is -55 to +175℃.

Reverse recovery time (trr)

The reverse recovery time of the IRF530 MOSFET is 150 to 280ns, it is the time taken by the device to reverse the flow of current.

Total gate charge (Q_g)

The total gate charge of IRF530 MOSFET is 26nC, the total gate charge needed to inject towards the gate to turn ON the MOSFET.

2N5457 JFET

IRF530 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRF530 MOSFET EQUIVALENT

The MOSFET devices such as BUZ20, IRFS5320, IRF642, BUK453, IRF530PBF, IRF340, and IRF641 are the equivalents of IRF530 MOSFET.

Most of these devices had the same electrical specifications, so we can easily use each of these MOSFETs to replace IRF530.

But before a component replacement, we need to check and verify the pinout details.  

IRF530 vs IRF540 vs IRF510

In this table we try to compare the electrical specifications of IRF530, IRF540, and IRF510 MOSFET devices, the comparison is a really helpful replacement process and it is also helpful for better understanding.

Characteristics	IRF530	IRF540	IRF510
Drain to source  voltage (VDS))	100V	100V	100V
Gate to source voltage (Vgs)	20V	20V	20V
Gate threshold voltage (Vg(th))	2 to 4V	2 to 4V	2 to 4V
Drain current (Id)	14A	28A	5.6A
Total gate charge (Qg)	26nC	72nC	8.3nC
Power dissipation (PD)	88W	150W	43W
Junction temperature (TJ)	-55 to +175°C	-55 to +175°C	-55  to +175°C
Drain to source on-state resistance (RDS)	0.16Ω	0.077Ω	0.54Ω
Rise time (tr)	34ns	44ns	16ns
Reverse recovery time (trr)	150 to 280ns	180 to 360ns	100 to 200ns
Package	TO-220AB	TO-220AB	TO-220AB

The voltage specs of each MOSFET device are identical and apt for low voltage applications, the current specs of the three MOSFETs are different IRF540 had a higher value and IRF510 had a low current value.

The power dissipation value of MOSFET devices is normally high, IRF540 is the POWER device on this list and IRF510 had a low dissipation capacity.

Characteristics curves of IRF530 MOSFET

The figures show the output characteristics of IRF530 MOSFET, the graph is plotted with drain current vs drain to source voltage.

The output of the MOSFET is generated by the variation of current and voltage values, at the initial stages, the characteristics is increases with a slight curve and increase towards the higher value.

The figure shows the transfer characteristics of IRF530 MOSFET, the graph is plotted by drain current vs gate to source voltage.

At a fixed drain to source voltage, the drain current will increase from zero and bend, and the gate to source voltage increases smoothly.

These characteristics are plotted in two temperature values, at a higher value, the transfer is slow and the lower value is faster.  

The figure shows the on-state resistance characteristics of IRF530 MOSFET, the graph is plotted with the drain to source on-resistance vs junction temperature, and also the drain current and gate to source voltage are fixed.

The on-state resistance increases from a low value with respect to junction temperature and increases towards the higher value quietly.

Motor controlling circuit using Arduino with IRF530

The figure shows the Arduino-based motor controlling circuit using IRF530 MOSFET, main components of this circuit are the IRF530 and the optocoupler pc817.

The pc817 optocoupler is used to transfer the electrical signal between two isolated circuits as like the circuit, as when the PWM signal reaches the optocoupler passes towards the MOSFET, it triggers starts and controls the motor

Applications of IRF530 MOSFET

• High speed switching for power supply circuit
• Converter circuits
• PWM motor controller circuits
• Bridge circuits