IRF530 MOSFET specification
- IRF530 is an N-channel MOSFET device
- Drain to source voltage (VDS) is 100V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 2 to 4V
- Drain current (Id) is 14A
- Pulsed drain current (IDM) is 56A
- Power dissipation is (PD) is 88W
- Drain to source on-state resistance (RDS (ON)) 16Ω
- Gate to source leakage current (IGSS) is 100nA
- Total gate charge (Qg) is 26nC
- Zero gate voltage drain current (IDSS) is 250uA
- Reverse recovery time (trr) is 150 to 280ns
- Peak diode recovery (dv/dt) is 5V/ns
- Rise time (tr) is 34ns
- Forward turn ON time (ton) is 85 to 1.7uc
- Thermal resistance junction to case (Rth j-c) is 7℃/W
- Junction temperature (TJ) is between -55 to 175℃
IRF530 MOSFET Pinout
|Gate will trigger the MOSFET device
|In the drain terminal were current flows into the MOSFET
|In the source, terminal current flows out from the MOSFET
IRF530 MOSFET package
The IRF530 MOSFET device is made with a TO-220 package, it is a bulkier component package specially made for POWER applications.
TO-220AB package is made with three types of material, the front portion is made with epoxy and plastic for heat resistant purposes and the back portion is made with metal to act as a heat sink.
IRF530 MOSFET electrical specification description
In this section we try to explain the electrical specifications of IRF530 MOSFET, the description is very useful for application basis.
The voltage specs of IRF530 MOSFET are a drain to source voltage is 100V, the gate to source voltage is 20V, and the gate threshold voltage is 2V to 4V, the terminal voltage specs show that the IRF530 had low voltage characteristics, which is apt for power supply applications.
The IRF530 MOSFET had a collector current of 14A, which is the amount of load capacity of the device.
The pulsed collector current value is 56A, it is the number of current flows at the minimum junction temperature.
The power dissipation value of IRF530 MOSFET is 88W, it is the power dissipation capacity of the device.
Peak diode recovery
The peak diode recovery dv/dt value is 5.5 V/ns, it is the recovery time based on the imagery diode of the MOSFET.
Drain to source on-state resistance
The drain to source on-state resistance is 0.16Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the IRF530 MOSFET is -55 to +175℃.
Reverse recovery time (trr)
The reverse recovery time of the IRF530 MOSFET is 150 to 280ns, it is the time taken by the device to reverse the flow of current.
Total gate charge (Qg)
The total gate charge of IRF530 MOSFET is 26nC, the total gate charge needed to inject towards the gate to turn ON the MOSFET.
IRF530 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF530 MOSFET EQUIVALENT
The MOSFET devices such as BUZ20, IRFS5320, IRF642, BUK453, IRF530PBF, IRF340, and IRF641 are the equivalents of IRF530 MOSFET.
Most of these devices had the same electrical specifications, so we can easily use each of these MOSFETs to replace IRF530.
But before a component replacement, we need to check and verify the pinout details.
IRF530 vs IRF540 vs IRF510
In this table we try to compare the electrical specifications of IRF530, IRF540, and IRF510 MOSFET devices, the comparison is a really helpful replacement process and it is also helpful for better understanding.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|2 to 4V
|2 to 4V
|2 to 4V
|Drain current (Id)
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +175°C
|-55 to +175°C
|-55 to +175°C
|Drain to source on-state resistance (RDS)
|Rise time (tr)
|Reverse recovery time (trr)
|150 to 280ns
|180 to 360ns
|100 to 200ns
The voltage specs of each MOSFET device are identical and apt for low voltage applications, the current specs of the three MOSFETs are different IRF540 had a higher value and IRF510 had a low current value.
The power dissipation value of MOSFET devices is normally high, IRF540 is the POWER device on this list and IRF510 had a low dissipation capacity.
Characteristics curves of IRF530 MOSFET
The figures show the output characteristics of IRF530 MOSFET, the graph is plotted with drain current vs drain to source voltage.
The output of the MOSFET is generated by the variation of current and voltage values, at the initial stages, the characteristics is increases with a slight curve and increase towards the higher value.
The figure shows the transfer characteristics of IRF530 MOSFET, the graph is plotted by drain current vs gate to source voltage.
At a fixed drain to source voltage, the drain current will increase from zero and bend, and the gate to source voltage increases smoothly.
These characteristics are plotted in two temperature values, at a higher value, the transfer is slow and the lower value is faster.
The figure shows the on-state resistance characteristics of IRF530 MOSFET, the graph is plotted with the drain to source on-resistance vs junction temperature, and also the drain current and gate to source voltage are fixed.
The on-state resistance increases from a low value with respect to junction temperature and increases towards the higher value quietly.
Motor controlling circuit using Arduino with IRF530
The figure shows the Arduino-based motor controlling circuit using IRF530 MOSFET, main components of this circuit are the IRF530 and the optocoupler pc817.
The pc817 optocoupler is used to transfer the electrical signal between two isolated circuits as like the circuit, as when the PWM signal reaches the optocoupler passes towards the MOSFET, it triggers starts and controls the motor
Applications of IRF530 MOSFET
- High speed switching for power supply circuit
- Converter circuits
- PWM motor controller circuits
- Bridge circuits