IRF5210 MOSFET specification
- IRF5210 is a P-channel silicon gate POWER MOSFET device
- Drain to source voltage (V (BR) DSS) is -100V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (ID) is -40A
- Pulsed drain current (IDM) is -140A
- Power dissipation (PD) is 200W
- Total gate charge (Qg) is 180nC
- Drain to source on-state resistance (RDS (ON)) 06Ω
- Rise time (tr) is 86ns
- Peak diode recovery dv/dt is –5V/ns
- Thermal resistance junction to case (Rth j-C) is 75℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 260ns
- Input capacitance is 2700pf
- Output capacitance is 790pf
- Advanced process technology
- Ultra-low on-resistance
- Fast switching
- Fully avalanche rated
- Allowed up to TJ max
- Dynamic dv/dt rating
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal will be used to trigger the MOSFET device|
|2||DRAIN||The drain is the input terminal of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
IRF5210 MOSFET package
The IRF5210 MOSFET is a high-power device having a TO-220AB package, it is a three-terminal semiconductor device package.
TO-220AB is a bulkier package made of epoxy/plastic material, this will provide higher temperature capacity and compactness for the device component.
TO-220AB is a through-hole package have a provision to attach a heat sink with it, the back portion of the package is coated with metal for transferring heat toward the heat sink.
IRF5210 POWER MOSFET electrical specification explanation
In this section, we explain the main electrical specifications of IRF5210 MOSFET.
Voltage specifications of IRF5210 MOSFET are a drain to source break down voltage is -100V, the gate to source voltage is +/-20V, and the threshold voltage value is -2V to -4V.
The voltage value of IRF5210 MOSFET shows, it is a high-voltage device having multiple applications.
The drain current value of IRF5210 MOSFET is -40A, which is the maximum load capacity of the device.
The pulsed drain current value of IRF5210 MOSFET is -140A, which is the current value at pulsed condition.
The power dissipation value of IRF5210 MOSFET is 43W, the power dissipation ability is the product of voltage and current at the device.
Drain to source on-state resistance
The drain-to-source on-state resistance of IRF5210 is 0.06Ω, the maximum resistance value of the semiconductor device is due to the carriers.
Junction temperature/ storage temperature
The junction temperature/storage temperature of the IRF5210 MOSFET is -55 to +175℃.
Thermal resistance junction to case
The thermal resistance junction to the case of IRF5210 MOSFET is 0.75℃/W
Total gate charge
The total gate charge value of IRF5210 is 180nC
The rise time value for IRF5210 MOSFET is 86ns, it is the switching speed of the device.
The capacitance value of IRF5210 MOSFET is 2700pF
IRF5210 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF5210 MOSFET devices have equivalent components such as IRF5210P, IRF5210L, IRF5305L, IRF5305, and IRF530SS, each of these devices has the same set of electrical specifications.
Before the replacement process, we need to check and verify the voltage and PINOUT details of MOSFET, both these specifications are very important at the circuit level.
IRF5210 vs IRF5305
In this table, we listed the electrical specifications of both MOSFETs IRF5210 and IRF5305.
|Drain to source voltage (VDS))||-100V||-55V|
|Gate to source voltage (Vgs)||-/+20V||-/+20V|
|Gate threshold voltage (Vg(th))||-2 to -4V||-2 to -4V|
|Drain current (ID)||-40A||-31A|
|Pulsed drain current||-140A||-110A|
|Thermal resistance, junction to case||0.75℃/W||1.4℃/W|
|Total gate charge (Qg)||180nC||63nC|
|Power dissipation (PD)||200W||110W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +175°C|
|Drain to source on-state resistance (RDS)||0.06Ω||0.06Ω|
|Rise time (tr)||86ns||66ns|
|Reverse recovery time (trr)||260ns||71 to 110ns|
Graphical representations of IRF5210 MOSFET
The figure shows the output characteristics of IRF5210 MOSFET, the graph plots with a drain to source current vs drain to source voltage.
At the different gate-to-source voltage values, the drain-to-source current increases from zero to a higher value and become constant.
The figure shows the maximum safe operating area of IRF5210 MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, and switching speed.
The figure shows the relay driver circuit using IRF5210 MOSFET, the circuit consists of IRF5210 MOSFET, 12v relay, diode 1N4148, and resistor.
When the relay switches a higher amount of current flow towards the MOSFET, this will drive or be controlled by the MOSFET.
Applications of IRF5210 MOSFET
- Solar battery charger
- Solar controller
- BMS systems
- Battery back-up circuit
- High power amplifier circuit