IRF520 MOSFET specification
- IRF520 is an N-channel power MOSFET device
- Drain to source voltage (VDS) is 100V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 2A
- Pulsed drain current (IDM) is 37A
- Power dissipation is (PD) is 60mW
- Total gate charge (Qg) is 16nC
- Peak diode recovery (dv/dt) is 5V/ns
- Drain to source on-state resistance (RDS (ON)) 27Ω
- Zero gate voltage drain current (IDSS) is 25 to 250uA
- Turn on rise time (tr) is 30ns
- Input capacitance (Ciss) is 360pf
- Thermal resistance junction to ambient (Rth j-A) is 62℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery time (trr) 110 to 260ns
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Low on-state resistance
- Low thermal resistance
IRF520 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||GATE||In the source, terminal current flows out from the MOSFET|
|2||DRAIN||The gate terminal is used as the trigger for the MOSFET|
|3||SOURCE||The drain terminal is the input of the MOSFET|
The IRF520 is a surface-mounted transistor type mainly used to minimize on-state resistance.
IRF520 MOSFET package
The IRF520 POWER MOSFET device is used mainly for power applications, TO-220AB is the package used in this MOSFET device.
TO-220AB is the package made with epoxy/plastic material for temperature resistance property and the back portion is made with metal, this is used to transfer the heat towards the heat sink.
The TO-220AB through-hole package is made to attach a heat sink with it, the power applications like inverter circuits, converter circuits, and charger circuits had many dissipation provisions using this device package.
IRF520 MOSFET electrical specification explanation
In this section, we try to explain the electrical specifications of IRF520 MOSFET. This specification explanation is really helpful for a better understanding of this device.
The terminal voltage specs of IRF520 MOSFET such as drain to source voltage is 100V, the gate to source voltage is +/-20V, and the gate threshold voltage is 2V to 4V.
The voltage specification of IRF520 MOSFET shows that it is a POWER MOSFET device mainly used for converter, rectifier, and power supply applications.
The current specs of the IRF520 MOSFET drain current value is 9.2A, it is the current value this device produces.
The pulsed drain current value is 37A, it is the current value produced at the condition where pulse width increases.
The current values of IRF520 MOSFET show that the load capacity of this MOSFET is higher and at the pulsed condition it had a heavier value.
Zero gates voltage drain current
The value for zero gate voltage drain current is 25 to 250uA, it is the current value of IRF520 MOSFET at a specific condition.
The power dissipation value of IRF520 MOSFET is 60W, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 0.27Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the IRF520 MOSFET is –55 to +175℃.
Thermal resistance junction to ambient
The thermal resistance of IRF520 MOSFET is 62℃/W
Total gate charge
The total gate charge value of IRF520 is 16nC, it is the charge needed to trigger the MOSFET.
The input capacitance of IRF520 MOSFET is 360Pf, it is the capacitance value offered by the MOSFET at its input.
The rise time value for IRF520 MOSFET is 30ns, it is the switching time offered by the MOSFET.
Reverse recovery time
The body diode reverse recovery time is 110 to 260ns
Peak diode recovery dv/dt
The peak diode recovery time is 5.5V/ns
IRF520 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF520 MOSFET EQUIVALENT
The MOSFET devices such as IRF530, IRF540, IRF640, IRFS521, IRFS520, 2SK551, and BUK442 are the equivalent MOSFET devices of IRF520.
The electrical specifications of each of these MOSFETs are much more similar to IRF520, this is why we can easily replace them.
IRF520 vs IRF540 vs IRF530
In this table, we try to list the electrical specifications of IRF520 vs IRF540 vs IRF530, this will be helpful for the replacement process of the IRF520 MOSFET device.
|Drain to source voltage (VDS))||100V||100V||100V|
|Gate to source voltage (Vgs)||20V||20V||20V|
|Gate threshold voltage (Vg(th))||2 to 4V||2 to 4V||2 to 4V|
|Drain current (Id)||9.2A||28A||14A|
|Zero gate voltage drain current (IDSS)||25 to 250uA||25 to 250uA||25 to 250uA|
|Total gate charge (Qg)||16nC||-||26nC|
|Power dissipation (PD)||60W||150W||88W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +175°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||0.27Ω||0.077Ω||0.16Ω|
|Rise time (tr)||30ns||44ns||34ns|
|Reverse recovery time||110 to 260ns||180 to 360ns||150 to 280ns|
The voltage specs and switching specs of each MOSFET device are the same, the IRF540 MOSFET had a higher current value.
Characteristics curves of IRF520 MOSFET
The figure shows the output characteristics of IRF520 MOSFET, the graph plotted with drain current vs drain to source voltage.
The graph is plots with different gate to source voltage values, the drain current increases from zero to a constant with respect to voltage value.
When the gate to source increases, the current value increases and reaches a higher limit.
The figure shows the on-state resistance characteristics vs temperature characteristics of IRF520 MOSFET, the graph is plotted with the drain to source on-state resistance vs junction temperature.
At a fixed voltage and current values, the on-state resistance value of IRF520 MOSFET increases from the lowest value to a higher value with respect to junction temperature.
The figure shows the safe operating area characteristics of IRF520 MOSFET, the graph is plotted with drain current vs drain to source voltage.
The operating area characteristics are been plots with on-state resistance, switching speed, and temperature value of IRF520 MOSFET.
Applications of IRF520 MOSFET
- Switching high power device
- Motor speed control
- LED dimmer circuit
- Flasher circuit
- Converter circuit
- Inverter circuit
- Audio amplifier circuit
- DC-DC converter circuit
- Solar applications
- UPS system
- BMS system
- Battery charger applications