IRF511 MOSFET
IRF511 MOSFET specification
- IRF511 is an N-channel enhancement mode silicon gate POWER MOSFET device
- Drain to source voltage (VDS) is 80V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 6A
- Pulsed drain current (IDM) is 20A
- Power dissipation (PD) is 43W
- Total gate charge (Qg) is 5 to 7.7nC
- Drain to source on-state resistance (RDS (ON)) 4 to 0.54Ω
- Rise time (tr) is 25 to 36ns
- Thermal resistance junction to case (Rth j-C) is 5℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 6 to 200ns
- Input capacitance is 135pf
- Output capacitance is 80pf
- Specified level of energy
- Breakdown avalanche mode of operation
- SOA is power dissipation limited
- Nano speed switching speed
- Linear transfer characteristics
- High input impedance
IRF511 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF511 MOSFET package
The IRF511 POWER MOSFET device has a TO-220AB package, it is a three-terminal semiconductor device package.
TO-220AB is a bulkier POWER MOSFET device made with epoxy/plastic material that provides higher temperature-withstanding capacity and is compact.
IRF511 POWER MOSFET electrical specification explanation
In this section we descript the electrical specifications of the IRF511 MOSFET device, this explanation is helpful for a better understanding of this device.
Voltage specs
The voltage specs of IRF511 MOSFET are a drain to source voltage is 80V, the gate to source voltage is +/-20V, and the gate to source threshold voltage is 2V to 4V.
The terminal voltage and triggering voltage value of IRF511 MOSFET indicate that it is a power device which having many switching applications.
Current specs
The drain current value of IRF511 MOSFET is 5.6A, the current value is the maximum load capacity of the device.
The pulsed drain current value of IRF511 MOSFET is 20A, it is the current value is much more dependent on the pulse width of the MOSFET device.
Dissipation specs
The power dissipation value of IRF511 MOSFET is 43W, the power dissipation ability is the product of voltage and current at the device.
Drain to source on-state resistance
The drain-to-source on-state resistance of IRF511 MOSFET is 0.4 to 0.54Ω, it is the overall resistance value of the semiconductor device.
Junction temperature/ operation temperature
The junction temperature/operation temperature of the IRF511 MOSFET is –55 to +175℃.
Thermal resistance junction to case
The thermal resistance of IRF511 MOSFET is 3.5℃/W
Total gate charge
The total gate charge value of IRF511 is 5 to 7.7nC
Rise time
The rise time value for IRF511 MOSFET is 4.6 to 200ns, it is the switching speed of the device at the circuit level.
IRF511 DATASHEET
If you need the datasheet in pdf please click this link
IRF511 EQUIVALENT
The IRF511 MOSFET device has equivalents such as IRF510, IRF520, IRF520ns, IRF521, and IRFZ44N, each of these devices has a similar set of electrical specifications, so we can easily use them as the replacement for IRF511 MOSFET.
Before the replacement process, we need to check the specs of IRF511 MOSFET, voltage specs, PINOUT details, and current, because at the circuit level it is very dangerous.
IRF511 vs IRFZ44
In this table, we listed and compare the electrical specifications of IRF511 and IRFZ44 MOSFET, the comparison is very useful for the replacement process because we can easily spot the specifications.
| Characteristics | IRF511 | IRFZ44 |
|---|---|---|
| Drain to source voltage (VDS)) | 80V | 60V |
| Gate to source voltage (Vgs) | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V |
| Drain current (Id) | 5.6A | 50A |
| Pulsed drain current | 20A | 200A |
| Thermal resistance, junction to case | 3.5℃/W | 1℃/W |
| Total gate charge (Qg) | 5 to 7.7nC | 67nC |
| Power dissipation (PD) | 43W | 150W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175°C |
| Drain to source on-state resistance (RDS) | 0.4 to 0.54Ω | 0.028Ω |
| Rise time (tr) | 25 to 36ns | 110ns |
| Reverse recovery time (trr) | 4.6 to 200ns | 120 to 180ns |
| Input capacitance | 135pf | 1900pf |
| Output capacitance | 80pf | 920pf |
| Package | TO-220AB | TO-220AB |
IRF511 MOSFET graphical representations
The figure shows the output characteristics of IRF511 MOSFET, the graph plotted with drain current vs drain to source voltage.
At the different gate-to-source voltage values, the IRF511 MOSFET output value increases with the increase in voltage.
The figure shows the maximum safe operating area of IRF511 MOSFET, the graph is plotted with drain current vs drain to source voltage and switching speed, temperature range, and resistance value.
Amplifier circuit using IRF511 MOSFET
The figure shows the class-A amplifier circuit based on IRF511 MOSFET, the operation of the amplifier starts from the C1 capacitor.
Then the IRF511 trigger starts to produce an amplified signal and the resistance provides biasing for the MOSFET.
Relay control circuit of IRF511 MOSFET
The figure shows the relay control circuit based on IRF511 and IN4001 diode, the operation is started when the relay starts switching, it releases a higher amount of current, the role of IRF511 MOSFET is to control the current and provide protection to the relay.
Applications of IRF511 MOSFET
- Switching regulator
- Switching converters
- Motor driver
- Relay driver
- Battery charger and BMS
- Solar battery charger
- UPS
- Computer and telecommunication systems
