IRF510 electrical specifications
- IRF510 is an N-channel power MOSFET device
- Drain to source voltage (VDS) is 100V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 6A
- Pulsed drain current (IDM) is 20A
- Power dissipation is (PD) is 43W
- Total gate charge (Qg) is 3nC
- Peak diode recovery (dv/dt) is 5V/ns
- Drain to source on-state resistance (RDS (ON)) 54Ω
- Turn-on rise time (tr) is 16ns
- Input capacitance (Ciss) is 180pf
- Output capacitance (Coss) is 81pF
- Thermal resistance junction to case (Rth j-C) is 5℃/W
- Maximum temperature (TSTG)/(TJ) is between -55 to 175℃
- Body diode reverse recovery time (trr) 100 to 200ns
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
- Low on-state resistance
- 175℃ operating temperature
- Low package cost
|Pin Number||Pin Name||Description|
|1||GATE||Gate terminal is the trigger for the device|
|2||SOURCE||In the source, terminal current flows out from the MOSFET|
|3||DRAIN||The drain terminal is the input of the MOSFET|
IRF510 POWER MOSFET device has a TO-220AB bulkier package, it is a high-power device.
TO-220AB is a three-terminal device made with epoxy material which had a higher temperature capacity.
TO-220AB is a through-hole, so they had the provision to attach a heat sink with it, the back portion of the package is made with metal for the heat transferring feature.
IRF510 MOSFET electrical specification explanation & applications
Here in this section, we explain the electrical specifications of IRF510 MOSFET, this detailed explanation is really useful for a better understanding of the device.
The terminal voltage value of IRF510 MOSFET is the drain to source is 100V and gate to source voltage +/-20V, the voltage values indicate it is a power device used for heavy applications.
The gate-to-source threshold voltage value is 2V and 4V, both of these are the common triggering voltage value of the MOSFET device.
The drain current value of IRF510 MOSFET is 5.6A, the current value indicates the maximum load capacity of the device.
The pulsed drain current value is 20A, this value is calculated from a specific condition.
Overall, the current values of the IRF510 MOSFET have multiple heavy applications.
The power dissipation ability of IRF510 MOSFET is 43W, it is the overall voltage and current values of the MOSFET device.
Drain to source on-state resistance
The drain-to-source on-state resistance value of IRF510 MOSFET is 0.54Ω, the resistance value is important at the circuit level.
The maximum temperature values of the IRF520 MOSFET are –55 to +175℃.
Thermal resistance junction to case
The thermal resistance between, the junction to the case is 3.5℃/W.
Total gate charge
The total gate charge value of IRF510 MOSFET is 8.3Nc.
The input capacitance of IRF510 MOSFET is 180Pf.
The output capacitance value of IRF510 MOSFET is 81Pf, this value is important at the circuit level.
The rise time value for IRF510 MOSFET is 16ns
If you need the datasheet in pdf please click this link
IRF510 POWER MOSFET devices have equivalent devices such as IRF512, IRF120, IRF634, 2SK2399, BUK452-100B, IRF532, IRF540, IRF630, IRF644, IRF520PBF, and IRF520, electrical specifications are almost same as IRF510 MOSFET, so we can use them as the replacement.
The applications based on IRF510 MOSFET are mainly high-power circuits, so we need to check and verify specs such as voltage, current, power dissipation, and PINOUT details.
IRF510 vs IRF512 vs IRF634
Here in this table, we listed the electrical specifications of IRF510, IRF512, and IRF634 MOSFETs, this detailed listing comparison is really useful for a better understanding of the device.
|Drain to source voltage (VDS))||100V||100V||250V|
|Gate to source voltage (Vgs)||20V||20V||20V|
|Gate threshold voltage (Vg(th))||2 to 4V||2 to 4V||2 to 4V|
|Drain current (Id)||9.2A||4.9A||8.1A|
|Pulsed drain current||20A||18A||32A|
|Total gate charge (Qg)||8.3nC||5 to 7.7nC||41nC|
|Power dissipation (PD)||43W||43W||74W|
|Junction temperature (TJ)||-55 to +175°C||-55 to +175°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||0.54Ω||0.4Ω to 0.54Ω||0.45Ω|
|Rise time (tr)||16ns||25 to 36ns||9.6ns|
|Reverse recovery time||100 to 200ns||46 to 200ns||220 to 440ns|
Characteristics curves of IRF510 MOSFET
The figure shows the output characteristics of IRF510 power MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate-to-source voltage values drain current increases with increases in gate voltage with respect to drain-to-source voltage.
After a certain point drain current curve has become a higher infinite value, this is common for all MOSFET devices.
The figure shows the on-state resistance characteristics of IRF510 MOSFET, the graph plots with a drain to source on-state resistance vs junction temperature.
At constant current and voltage values, the on-state resistance value increases from a certain value with respect to junction temperature.
The figure shows the maximum safe operating area characteristics of IRF510 MOSFET, the graph plots with drain current vs drain to source voltage and on-state resistance, temperature value, and switching speed.
The characteristics curves indicate the operational areas of the device, using this data we can easily make circuits.
IRF510 Motor speed controller circuit
The figure shows the IRF510 MOSFET-based motor speed controller circuit, the circuit consists of two resistors and IRF510 MOSFET for current controlling function.
Applications of IRF510 MOSFET
- Switching regulators circuits
- Switching converter circuits
- Motor driver circuits
- Relay drivers circuits
- Drivers for the high-power bipolar switching transistor
- High-speed and low-gate driver applications
- UPS circuits
- Battery charger circuit
- BMS circuits
- Telecommunication systems
- Computer applications
- Solar UPS circuits